Infineon Technologies 晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Infineon Technologies
記錄 6,749
頁面 183/225
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型號 |
制造商 |
描述 |
庫存 |
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系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
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Infineon Technologies |
MOSFET N-CH 30V 30A TO-220-3 |
7,236 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 11.4mOhm @ 30A, 10V | 2.2V @ 250µA | 14nC @ 10V | ±20V | 1500pF @ 15V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 20A TO-220-3 |
3,528 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Tc) | 4.5V, 10V | 14.7mOhm @ 20A, 10V | 2.2V @ 250µA | 10nC @ 10V | ±20V | 1000pF @ 15V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 90A TO251-3 |
8,280 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 3.1mOhm @ 30A, 10V | 2.2V @ 250µA | 51nC @ 10V | ±20V | 5300pF @ 15V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 30V 90A TO251-3 |
2,304 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 4mOhm @ 30A, 10V | 2.2V @ 250µA | 38nC @ 10V | ±20V | 3900pF @ 15V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO251-3 |
3,636 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 5mOhm @ 30A, 10V | 2.2V @ 250µA | 31nC @ 10V | ±20V | 3200pF @ 15V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO251-3 |
8,280 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 6mOhm @ 30A, 10V | 2.2V @ 250µA | 23nC @ 10V | ±20V | 2400pF @ 15V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 30V 40A TO251-3 |
8,316 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2.2V @ 250µA | 15nC @ 10V | ±20V | 1600pF @ 15V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 30V 35A TO251-3 |
3,526 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 10.5mOhm @ 30A, 10V | 2.2V @ 250µA | 14nC @ 10V | ±20V | 1500pF @ 15V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 30V 30A TO251-3 |
2,430 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 13.5mOhm @ 30A, 10V | 2.2V @ 250µA | 10nC @ 10V | ±20V | 1000pF @ 15V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 30V 50A IPAK |
2,502 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 5mOhm @ 30A, 10V | 2.2V @ 250µA | 31nC @ 10V | ±20V | 3200pF @ 15V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO-251-3 |
3,600 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 6mOhm @ 30A, 10V | 2.2V @ 250µA | 23nC @ 10V | ±20V | 2400pF @ 15V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 40A TO-251-3 |
3,780 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2.2V @ 250µA | 15nC @ 10V | ±20V | 1600pF @ 15V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 35A IPAK |
8,424 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 10.5mOhm @ 30A, 10V | 2.2V @ 250µA | 14nC @ 10V | ±20V | 1500pF @ 15V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 30A TO-251-3 |
7,056 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 13.5mOhm @ 30A, 10V | 2.2V @ 250µA | 10nC @ 10V | ±20V | 1000pF @ 15V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 35A TO-263-3 |
5,472 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 9.6mOhm @ 30A, 10V | 2.2V @ 250µA | 15nC @ 10V | ±20V | 1600pF @ 15V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 24A TO262 |
2,322 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 24A (Tc) | 10V | 77.5mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | ±20V | 1710pF @ 50V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 200V 24A TO262 |
3,762 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 24A (Tc) | 10V | 77.5mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | ±20V | 1710pF @ 50V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 200V 24A IPAK |
3,132 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 24A (Tc) | 10V | 78mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | ±20V | 1710pF @ 50V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 200V 24A D2PAK |
4,896 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 24A (Tc) | 10V | 77.5mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | ±20V | 1710pF @ 50V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 240A D2PAK |
4,590 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 240A (Tc) | 4.5V, 10V | 1.9mOhm @ 180A, 10V | 2.5V @ 250µA | 160nC @ 4.5V | ±16V | 11270pF @ 50V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 200V 24A D2PAK |
3,744 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 24A (Tc) | 10V | 77.5mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | ±20V | 1710pF @ 50V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 24A D2PAK |
6,498 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 24A (Tc) | 10V | 77.5mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | ±20V | 1710pF @ 50V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 33A D-PAK |
2,898 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 33A (Tc) | 10V | 42mOhm @ 21A, 10V | 5V @ 100µA | 26nC @ 10V | ±20V | 1750pF @ 50V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 200V 24A D-PAK |
8,820 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 24A (Tc) | 10V | 78mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | ±20V | 1710pF @ 50V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 300MA SOT-23 |
7,614 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 4.5V, 10V | 3Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.6nC @ 10V | ±20V | 20pF @ 25V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 100V 63A TDSON-8 |
3,240 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 9.4A (Ta), 63A (Tc) | 10V | 15.2mOhm @ 25A, 10V | 4V @ 72µA | 29nC @ 10V | ±20V | 1900pF @ 50V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 63A WDSON-2 |
3,580 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta), 63A (Tc) | 4.5V, 10V | 4.5mOhm @ 20A, 10V | 2.2V @ 250µA | 34nC @ 10V | ±20V | 2600pF @ 15V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET P-CH 100V 0.98A SOT-223 |
2,754 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 100V | 980mA (Tc) | 10V | 900mOhm @ 980mA, 10V | 4V @ 380µA | 12nC @ 10V | ±20V | 319pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 100V 1A SOT-223 |
4,770 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 100V | 1A (Tc) | 4.5V, 10V | 800mOhm @ 1A, 10V | 1V @ 380µA | 16.5nC @ 10V | ±20V | 372pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 60V 620MA SC-59 |
6,174 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 620mA (Ta) | 4.5V, 10V | 800mOhm @ 620mA, 10V | 2V @ 160µA | 6nC @ 10V | ±20V | 176pF @ 25V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SC-59 | TO-236-3, SC-59, SOT-23-3 |