Infineon Technologies 晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Infineon Technologies
記錄 6,749
頁面 21/225
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型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
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Infineon Technologies |
MOSFET N-CH 75V 120A TO263-3 |
18,954 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 2mOhm @ 100A, 10V | 3.8V @ 273µA | 206nC @ 10V | ±20V | 14400pF @ 37.5V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO-247AC |
51,642 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4.2mOhm @ 75A, 10V | 4V @ 150µA | 120nC @ 10V | ±20V | 4520pF @ 50V | - | 220W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 800V 17A TO220 |
15,480 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 280mOhm @ 7.2A, 10V | 3.5V @ 360µA | 36nC @ 10V | ±20V | 1200pF @ 500V | Super Junction | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 40V 195A TO220AB |
31,038 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 4.5V, 10V | 1.7mOhm @ 195A, 10V | 2.5V @ 250µA | 162nC @ 4.5V | ±20V | 10315pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 95A TO-247AC |
13,944 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 95A (Tc) | 10V | 5.3mOhm @ 95A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 5600pF @ 25V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 40V 75A TO-220AB |
15,888 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 2.3mOhm @ 75A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 6450pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 56A TO-220AB |
15,258 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 56A (Tc) | 10V | 40mOhm @ 34A, 10V | 4V @ 250µA | 220nC @ 10V | ±20V | 4220pF @ 25V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
20,184 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 95mOhm @ 11.8A, 10V | 4V @ 590µA | 45nC @ 10V | ±20V | 2140pF @ 400V | - | 128W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 59A D2PAK |
31,608 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 59A (Tc) | 10V | 18mOhm @ 35A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 2900pF @ 25V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 195A |
18,834 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 4.5V, 10V | 1.25mOhm @ 100A, 10V | 2.4V @ 250µA | 270nC @ 4.5V | ±20V | 15140pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 80V 120A D2PAK |
23,478 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 6V, 10V | 1.7mOhm @ 100A, 10V | 3.8V @ 280µA | 223nC @ 10V | ±20V | 16900pF @ 40V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 55V 42A D2PAK |
16,020 |
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Automotive, AEC-Q101, HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 20mOhm @ 42A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 3500pF @ 25V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH TO220-3 |
14,394 |
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CoolMOS™ CFD7 | N-Channel | MOSFET (Metal Oxide) | 650V | 14A (Tc) | 10V | 170mOhm @ 6A, 10V | 4.5V @ 300µA | 28nC @ 10V | ±20V | 1199pF @ 400V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 800V 11A TO-247 |
12,354 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 11A (Tc) | 10V | 450mOhm @ 7.1A, 10V | 3.9V @ 680µA | 85nC @ 10V | ±20V | 1600pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N CH 60V 195A TO-220AB |
22,992 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.7V @ 250µA | 411nC @ 10V | ±20V | 13703pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 17.5A TO220 |
23,244 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 17.5A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 4.5V @ 730µA | 68nC @ 10V | ±20V | 1850pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 100V 180A TO-262 |
27,048 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 4.7mOhm @ 106A, 10V | 4V @ 250µA | 215nC @ 10V | ±20V | 9575pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 900V 11A TO220-3 |
58,842 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 3.5V @ 740µA | 68nC @ 10V | ±20V | 1700pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET NCH 60V 36A DIRECTFET |
30,480 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 36A (Ta), 345A (Tc) | 10V | 1.5mOhm @ 120A, 10V | 4V @ 250µA | 275nC @ 10V | 60V | 10655pF @ 25V | - | 3.8W (Ta), 341W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
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Infineon Technologies |
MOSFET N-CH 150V 104A TO220AB |
18,072 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 104A (Tc) | 10V | 11mOhm @ 62A, 10V | 5V @ 250µA | 120nC @ 10V | ±20V | 5270pF @ 50V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO-247AC |
17,268 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 3mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | ±20V | 6540pF @ 50V | - | 280W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 75V 120A TO-220AB |
113,934 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 3.3mOhm @ 75A, 10V | 4V @ 250µA | 220nC @ 10V | ±20V | 9400pF @ 50V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 50A TO-247AC |
60,762 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 50A (Tc) | 10V | 40mOhm @ 28A, 10V | 4V @ 250µA | 234nC @ 10V | ±20V | 4057pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 60V 45A TO263-7 |
220,374 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 45A (Ta), 180A (Tc) | 6V, 10V | 1mOhm @ 100A, 10V | 4V @ 280µA | 208nC @ 10V | ±20V | 15000pF @ 30V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 650V 16A TO220-3 |
10,404 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 16A (Tc) | 10V | 199mOhm @ 9.9A, 10V | 3.5V @ 660µA | 43nC @ 10V | ±20V | 1520pF @ 100V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 29A HSOF-8 |
21,252 |
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CoolMOS™ G7 | N-Channel | MOSFET (Metal Oxide) | 650V | 29A (Tc) | 10V | 80mOhm @ 9.7A, 10V | 4V @ 490µA | 42nC @ 10V | ±20V | 1640pF @ 400V | - | 167W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8-2 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N CH 40V 195A TO247 |
15,066 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 6V, 10V | 1.3mOhm @ 100A, 10V | 3.9V @ 250µA | 460nC @ 10V | ±20V | 14240pF @ 25V | - | 366W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 75V 90A TO-247AC |
20,412 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 90A (Tc) | 10V | 4.5mOhm @ 90A, 10V | 4V @ 250µA | 270nC @ 10V | ±20V | 7500pF @ 25V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 250V 46A TO-220AB |
20,796 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 46A (Tc) | 10V | 46mOhm @ 26A, 10V | 5V @ 250µA | 110nC @ 10V | ±30V | 4560pF @ 25V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 55V 74A TO220AB |
23,772 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 74A (Tc) | 10V | 20mOhm @ 38A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 3400pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |