Infineon Technologies 晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Infineon Technologies
記錄 6,749
頁面 24/225
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型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
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Infineon Technologies |
MOSFET N-CH 30V 21A 8-SOIC |
96,840 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta) | 4.5V, 10V | 3.5mOhm @ 21A, 10V | 2.35V @ 50µA | 30nC @ 4.5V | ±20V | 3175pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 30A TO252-3 |
23,790 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 20mOhm @ 18A, 10V | 2V @ 23µA | 19nC @ 10V | ±20V | 530pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 27A DPAK |
77,652 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 27A (Tc) | 10V | 45mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 700pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 800V 4A DPAK |
20,316 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 1.4Ohm @ 1.4A, 10V | 3.5V @ 700µA | 10nC @ 10V | ±20V | 250pF @ 500V | Super Junction | 32W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 500V 6A DPAK |
15,714 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 6A (Tc) | 10V | 1.3Ohm @ 3.7A, 10V | 5V @ 250µA | 34nC @ 10V | ±20V | 1346pF @ 25V | - | 119W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 70A TO252-3 |
49,176 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 70A (Tc) | 4.5V, 10V | 4.3mOhm @ 70A, 10V | 2.2V @ 30µA | 48nC @ 10V | ±16V | 3300pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 86A TO252-3-313 |
40,302 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 86A (Tc) | 10V | 5.2mOhm @ 86A, 10V | 4V @ 30µA | 37nC @ 10V | ±20V | 2960pF @ 25V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 40A TSDSON-8 |
349,536 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta), 40A (Tc) | 4.5V, 10V | 3.5mOhm @ 20A, 10V | 2V @ 250µA | 74nC @ 10V | ±20V | 5700pF @ 15V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 13.3A 8-SOIC |
32,226 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13.3A (Ta) | 4.5V | 9mOhm @ 15A, 4.5V | 1V @ 250µA | 62nC @ 5V | ±12V | 3780pF @ 16V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N CH 30V 32A PQFN5X6 |
81,012 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 32A (Ta), 169A (Tc) | 4.5V, 10V | 2.1mOhm @ 20A, 10V | 2.35V @ 100µA | 66nC @ 10V | ±20V | 4960pF @ 10V | - | 3.6W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-TQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 30V 100A 8TDSON |
38,712 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 28A (Ta), 100A (Tc) | 4.5V, 10V | 1.9mOhm @ 30A, 10V | 2.2V @ 250µA | 44nC @ 10V | ±20V | 2800pF @ 15V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 200V 9.4A DPAK |
22,380 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 9.4A (Tc) | 10V | 380mOhm @ 5.6A, 10V | 5.5V @ 250µA | 27nC @ 10V | ±30V | 560pF @ 25V | - | 86W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
42,210 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 14.5mOhm @ 36A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 1380pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 64A 8TDSON |
102,444 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 64A (Tc) | 6V, 10V | 6.6mOhm @ 50A, 10V | 3.3V @ 20µA | 21nC @ 10V | ±20V | 1500pF @ 30V | - | 2.5W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 35A TO252-3 |
24,174 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 35A (Tc) | 10V | 25mOhm @ 35A, 10V | 4V @ 39µA | 31nC @ 10V | ±20V | 2070pF @ 50V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 30V 9.2A 8DSO |
21,552 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 9.2A (Ta) | 10V | 13mOhm @ 11.7A, 10V | 2.2V @ 140µA | 81nC @ 10V | ±25V | 3520pF @ 25V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | P-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 800V 3.9A TO252-3 |
52,314 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 3.9A (Tc) | 10V | 1.4Ohm @ 2.3A, 10V | 3.9V @ 240µA | 23nC @ 10V | ±20V | 570pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 150V 5.1A 8-SOIC |
105,078 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 5.1A (Ta) | 10V | 43mOhm @ 3.1A, 10V | 5V @ 100µA | 38nC @ 10V | ±20V | 1647pF @ 75V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 17A 8DSO |
48,228 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 17A (Ta) | 4.5V, 10V | 3.3mOhm @ 22A, 10V | 2V @ 250µA | 124nC @ 10V | ±20V | 9600pF @ 15V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 150V 3.6A 8-SOIC |
28,770 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 3.6A (Ta) | 10V | 90mOhm @ 2.2A, 10V | 5.5V @ 250µA | 41nC @ 10V | ±30V | 990pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
27,402 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 11mOhm @ 37A, 10V | 4V @ 50µA | 60nC @ 10V | ±20V | 1720pF @ 25V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 120V 35A TO252-3 |
65,214 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 120V | 35A (Tc) | 4.5V, 10V | 24mOhm @ 35A, 10V | 2.4V @ 39µA | 39nC @ 10V | ±20V | 2700pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 400V 500MA SOT-223 |
20,826 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 400V | 500mA (Ta) | 10V | 3Ohm @ 500mA, 10V | 4V @ 1mA | - | ±20V | 400pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 40V 85A 8PQFN |
275,208 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 85A (Tc) | 6V, 10V | 2.4mOhm @ 50A, 10V | 3.9V @ 100µA | 138nC @ 10V | ±20V | 4574pF @ 25V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 22A TSDSON-8 |
84,480 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta). 40A (Tc) | 4.5V, 10V | 1.9mOhm @ 20A, 10V | 2V @ 250µA | 44nC @ 10V | ±20V | 2800pF @ 15V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 500V 4.5A DPAK |
79,050 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 3.9V @ 200µA | 22nC @ 10V | ±20V | 470pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3-1 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CHANNEL 700V 4A TO251 |
17,172 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 4A (Tc) | 10V | 1.4Ohm @ 700mA, 10V | 3.5V @ 40µA | 4.7nC @ 10V | ±16V | 158pF @ 400V | - | 22.7W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 100V 32A DPAK |
31,314 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 32A (Tc) | 10V | 44mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | ±20V | 1960pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CHANNEL 700V 6A TO251 |
13,890 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 6A (Tc) | 10V | 900mOhm @ 1.1A, 10V | 3.5V @ 60µA | 6.8nC @ 10V | ±16V | 211pF @ 400V | - | 30.5W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 55V 30A TO252-3 |
45,984 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 10V | 14.7mOhm @ 30A, 10V | 4V @ 80µA | 110nC @ 10V | ±20V | 1485pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |