Infineon Technologies 晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Infineon Technologies
記錄 6,749
頁面 215/225
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型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
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Infineon Technologies |
MOSFET N-CH 500V 4.6A TO-220FP |
7,470 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 4.6A (Tc) | 13V | 650mOhm @ 1.8A, 13V | 3.5V @ 150µA | 15nC @ 10V | ±20V | 342pF @ 100V | - | 27.2W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V TO-220-3 |
3,436 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 5.6A (Tc) | 10V | 800mOhm @ 2A, 10V | 3.5V @ 170µA | 17.2nC @ 10V | ±20V | 373pF @ 100V | - | 27W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 800V TO-220-3 |
7,650 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 800V | 2.8A (Tc) | 10V | 1.4Ohm @ 2.3A, 10V | 3.9V @ 240µA | 23nC @ 10V | ±20V | 570pF @ 100V | - | 31W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 800V TO-220-3 |
7,560 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 800V | 5A (Tc) | 10V | 460mOhm @ 7.1A, 10V | 3.9V @ 680µA | 64nC @ 10V | ±20V | 1600pF @ 100V | - | 34W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 800V TO-220-3 |
4,104 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 800V | 4.5A (Tc) | 10V | 650mOhm @ 5.1A, 10V | 3.9V @ 470µA | 45nC @ 10V | ±20V | 1100pF @ 100V | - | 33W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V 4.3A TO-251-3 |
3,996 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 650V | 4.3A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 200µA | 15.3nC @ 10V | ±20V | 328pF @ 100V | - | 37W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 600V TO-251-3 |
7,506 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 4.3A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 130µA | 13nC @ 10V | ±20V | 280pF @ 100V | - | 37W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 600V TO-251-3 |
4,212 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 3.1A (Tc) | 10V | 1.5Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | ±20V | 200pF @ 100V | - | 28W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 600V TO-251-3 |
4,662 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 2.3A (Tc) | 10V | 2.1Ohm @ 760mA, 10V | 3.5V @ 60µA | 6.7nC @ 10V | ±20V | 140pF @ 100V | - | 22W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 600V TO-252-3 |
7,560 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 4.3A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 130µA | 13nC @ 10V | ±20V | 280pF @ 100V | - | 37W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V TO-252-3 |
8,568 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 10.3A (Tc) | 10V | 400mOhm @ 3.8A, 10V | 3.5V @ 300µA | 32nC @ 10V | ±20V | 700pF @ 100V | - | 83W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V TO-252-3 |
8,928 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 9.1A (Tc) | 10V | 460mOhm @ 3.4A, 10V | 3.5V @ 280µA | 28nC @ 10V | ±20V | 620pF @ 100V | - | 74W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V TO-252-3 |
8,496 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 650mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5nC @ 10V | ±20V | 440pF @ 100V | - | 63W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V TO-252-3 |
2,682 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 5.6A (Tc) | 10V | 800mOhm @ 2A, 10V | 3.5V @ 170µA | 17.2nC @ 10V | ±20V | 373pF @ 100V | - | 48W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 9.3A |
5,994 |
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FASTIRFET™, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 9.3A (Ta), 34A (Tc) | 10V | 16.4mOhm @ 20A, 10V | 3.6V @ 50µA | 19nC @ 10V | ±20V | 733pF @ 50V | - | 2.8W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3.3x3.3), Power33 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 20A |
8,640 |
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FASTIRFET™, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 20A (Ta), 128A (Tc) | 10V | 4.8mOhm @ 50A, 10V | 3.6V @ 150µA | 54nC @ 10V | ±20V | 2320pF @ 50V | - | 3.9W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 15A |
7,272 |
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FASTIRFET™, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 15A (Ta), 82A (Tc) | 10V | 7.5mOhm @ 49A, 10V | 3.6V @ 100µA | 39nC @ 10V | ±20V | 1685pF @ 50V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 40V 195A TO-262 |
7,452 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 6V, 10V | 1.8mOhm @ 100A, 10V | 3.9V @ 150µA | 225nC @ 10V | ±20V | 7330pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 600V 5.7A TO252 |
5,292 |
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CoolMOS™ E6 | N-Channel | MOSFET (Metal Oxide) | 600V | 5.7A (Tc) | 10V | 750mOhm @ 2A, 10V | 3.5V @ 170µA | 17.2nC @ 10V | ±20V | 373pF @ 100V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 500V 4.3A TO251 |
7,290 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 4.3A (Tc) | 13V | 950mOhm @ 1.2A, 13V | 3.5V @ 100µA | 10.5nC @ 10V | ±20V | 231pF @ 100V | - | 53W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 600V 7.3A TO251 |
4,284 |
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CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5nC @ 10V | ±20V | 440pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 600V 4.4A TO251 |
7,362 |
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CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 600V | 4.4A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 130µA | 13nC @ 10V | ±20V | 280pF @ 100V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO262-3 |
3,456 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 3.7mOhm @ 80A, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | 5300pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO262-3 |
2,988 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 3.7mOhm @ 80A, 10V | 4V @ 250µA | 148nC @ 10V | ±20V | 4400pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 40V 100A TO220-3 |
7,290 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 3.6mOhm @ 80A, 10V | 4V @ 250µA | 172nC @ 10V | ±20V | 5300pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 100A TO220-3 |
8,136 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 3.3mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | ±20V | 6000pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 100A TO220-3 |
4,986 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 100A (Tc) | 10V | 5mOhm @ 80A, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | 5110pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO220-3 |
8,946 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4mOhm @ 80A, 10V | 4V @ 250µA | 148nC @ 10V | ±20V | 4400pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3 |
7,884 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 6.3mOhm @ 69A, 10V | 2V @ 180µA | 150nC @ 10V | ±20V | 3800pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 500V 13A PG-TO252 |
5,958 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 13A (Tc) | 13V | 280mOhm @ 4.2A, 13V | 3.5V @ 350µA | 32.6nC @ 10V | ±20V | 773pF @ 100V | - | 119W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |