Infineon Technologies 晶體管-FET，MOSFET-單
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
展開過濾器
重置過濾器
應用過濾器
類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Infineon Technologies
記錄 6,749
頁面 98/225
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
MOSFET N-CH TO262-3 |
6,858 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 2.8mOhm @ 100A, 10V | 4V @ 223µA | 167nC @ 10V | ±20V | 11550pF @ 25V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 240A HSOF-8 |
4,788 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 240A (Tc) | 6V, 10V | 1.2mOhm @ 100A, 10V | 3.3V @ 143µA | 124nC @ 10V | ±20V | 9750pF @ 30V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 75V 120A TO-220AB |
4,014 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 4.1mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | ±20V | 6920pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 75A D2PAK |
4,302 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 7mOhm @ 75A, 10V | 4V @ 250µA | 250nC @ 10V | ±20V | 7670pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V TO220-3 |
6,552 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 10A (Tc) | 10V | 125mOhm @ 8.9A, 10V | 4V @ 440µA | 35nC @ 10V | ±20V | 1670pF @ 400V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 21A TO220-3 |
2,754 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 165mOhm @ 12A, 10V | 3.5V @ 660µA | 52nC @ 10V | ±20V | 2000pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
HIGH POWER_LEGACY |
6,246 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 550V 23A TO-220 |
6,966 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 550V | 23A (Tc) | 10V | 140mOhm @ 14A, 10V | 3.5V @ 930µA | 64nC @ 10V | ±20V | 2540pF @ 100V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 150V 99A D2PAK |
6,840 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 99A (Tc) | 10V | 12.1mOhm @ 62A, 10V | 5V @ 250µA | 120nC @ 10V | ±20V | 5270pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N CH 150V 99A TO262 |
5,940 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 99A (Tc) | 10V | 12.1mOhm @ 62A, 10V | 5V @ 250µA | 120nC @ 10V | ±20V | 5270pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 120V 1A SAWN ON FOIL |
4,806 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 120V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 4V @ 244µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
|
|
|
Infineon Technologies |
HIGH POWER_NEW |
7,776 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 250V 35A DIRECTFET |
3,024 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 375A (Tc) | 10V | 38mOhm @ 21A, 10V | 5V @ 250µA | 165nC @ 10V | ±30V | 6714pF @ 25V | - | 4.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
|
|
|
Infineon Technologies |
MV POWER MOS |
7,596 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 150V 1A SAWN ON FOIL |
2,106 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 4V @ 270µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
|
|
|
Infineon Technologies |
MOSFET N-CH 150V 1A SAWN ON FOIL |
6,534 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 4V @ 250µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
|
|
|
Infineon Technologies |
MV POWER MOS |
6,300 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 900V TO-247 |
3,186 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 3.5V @ 740µA | 68nC @ 10V | ±20V | 1700pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 195A D2PAK |
7,128 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 2mOhm @ 75A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 6450pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 202A D2PAK |
5,166 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 4mOhm @ 95A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 7360pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 20A 4VSON |
4,122 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 104mOhm @ 9.7A, 10V | 4V @ 490µA | 42nC @ 10V | ±20V | 1819pF @ 400V | - | 122W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
|
|
|
Infineon Technologies |
MOSFET P-CH TO263-3 |
3,564 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
AUTOMOTIVE |
8,946 |
|
Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 290mOhm @ 11A, 10V | 3.9V @ 1mA | 117nC @ 10V | ±20V | 2300pF @ 100V | - | 227W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET NCH 24V 340A D2PAK |
8,424 |
|
Automotive, AEC-Q101, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 24V | 340A (Tc) | 10V | 1.65mOhm @ 195A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 7590pF @ 24V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 195A TO262 |
7,542 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 4.5V, 10V | 2.4mOhm @ 165A, 10V | 2.5V @ 250µA | 140nC @ 4.5V | ±16V | 11210pF @ 50V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH TO262-3 |
3,042 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 3.9mOhm @ 100A, 10V | 3.5V @ 180µA | 140nC @ 10V | ±20V | 10120pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH TO220-3 |
7,362 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 3.9mOhm @ 100A, 10V | 3.5V @ 180µA | 140nC @ 10V | ±20V | 10120pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 4VSON |
2,286 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 21A (Tc) | 10V | 99mOhm @ 5.9A, 10V | 4V @ 590µA | 45nC @ 10V | ±20V | 2140pF @ 400V | - | 128W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V TO-220-3 |
8,766 |
|
Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | ±20V | 2340pF @ 100V | - | 195.3W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 26A TO247-3 |
8,964 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 26A (Tc) | 10V | 120mOhm @ 8.2A, 10V | 4V @ 410µA | 36nC @ 10V | ±20V | 1544pF @ 400V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |