晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 32/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 40V 100A PQFN |
33,990 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 1.25mOhm @ 100A, 10V | 3.9V @ 150µA | 190nC @ 10V | ±20V | 6560pF @ 25V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET P-CH 30V 21.1A POWER56 |
389,214 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 30V | 21.1A (Ta), 49A (Tc) | 4.5V, 10V | 3.2mOhm @ 22.1A, 10V | 3V @ 250µA | 241nC @ 10V | ±25V | 10380pF @ 15V | - | 2.5W (Ta), 73W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 200V 3.7A POWER56 |
44,670 |
|
UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 3.7A (Ta), 20A (Tc) | 6V, 10V | 77mOhm @ 3.7A, 10V | 4V @ 250µA | 42nC @ 10V | ±20V | 2315pF @ 100V | - | 2.5W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (5x6), Power56 | 8-PowerWDFN |
|
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Infineon Technologies |
MOSFET N-CH 120V 75A TO252-3 |
121,542 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 120V | 75A (Tc) | 10V | 11mOhm @ 75A, 10V | 3V @ 83µA (Typ) | 65nC @ 10V | ±20V | 4310pF @ 60V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
ON Semiconductor |
MOSFET P-CH 60V 70A ATPAK |
2,241 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 70A (Ta) | 4.5V, 10V | 13mOhm @ 35A, 10V | - | 115nC @ 10V | ±20V | 5400pF @ 20V | - | 70W (Tc) | 150°C (TJ) | Surface Mount | ATPAK | ATPAK (2 leads+tab) |
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Infineon Technologies |
MOSFET P-CH 30V 30A TDSON-8 |
96,630 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta), 30A (Tc) | 10V | 8mOhm @ 30A, 10V | 2.2V @ 250µA | 122.4nC @ 10V | ±25V | 6140pF @ 15V | - | 2.5W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-3 | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET P-CH 60V 8.6A PPAK SO-8 |
5,248 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 8.6A (Ta) | 4.5V, 10V | 14.5mOhm @ 14.4A, 10V | 3V @ 250µA | 190nC @ 10V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 150V 25A TO252 |
67,776 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 25A (Tc) | 6V, 10V | 52mOhm @ 5A, 10V | 4V @ 250µA | 40nC @ 10V | ±20V | 1725pF @ 25V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 60V 8.6A PPAK SO-8 |
45,726 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 8.6A (Ta) | 4.5V, 10V | 14.5mOhm @ 14.4A, 10V | 3V @ 250µA | 190nC @ 10V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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EPC |
GANFET TRANS 100V BUMPED DIE |
330,630 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 16A (Ta) | 5V | 7mOhm @ 16A, 5V | 2.5V @ 5mA | 6.5nC @ 5V | +6V, -4V | 685pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 60A 8-SOP |
51,564 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 0.9mOhm @ 30A, 10V | 2.3V @ 1mA | 74nC @ 10V | ±20V | 6900pF @ 15V | - | 1.6W (Ta), 78W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 80V 100A TDSON-8 |
382,800 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 16A (Ta), 100A (Tc) | 6V, 10V | 5.7mOhm @ 50A, 10V | 3.5V @ 73µA | 56nC @ 10V | ±20V | 3900pF @ 40V | - | 2.5W (Ta), 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET P-CH 60V 27A D2PAK |
32,862 |
|
QFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 27A (Tc) | 10V | 70mOhm @ 13.5A, 10V | 4V @ 250µA | 43nC @ 10V | ±25V | 1400pF @ 25V | - | 3.75W (Ta), 120W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 217A DIRECTFET |
70,908 |
|
HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 217A (Tc) | 6V, 10V | 1.2mOhm @ 132A, 10V | 3.9V @ 150µA | 185nC @ 10V | ±20V | 6680pF @ 25V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric ME | DirectFET™ Isometric ME |
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Infineon Technologies |
MOSFET N-CH 150V 6.2A DIRECTFET |
33,756 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 6.2A (Ta), 35A (Tc) | 10V | 34.5mOhm @ 7.6A, 10V | 4.9V @ 150µA | 55nC @ 10V | ±20V | 2340pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MZ | DirectFET™ Isometric MZ |
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STMicroelectronics |
MOSFET N-CH 200V 18A DPAK |
76,260 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 125mOhm @ 10A, 10V | 4V @ 250µA | 39nC @ 10V | ±20V | 940pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 75V 28A PPAK SO-8 |
312,900 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 28A (Tc) | 4.5V, 10V | 11mOhm @ 15A, 10V | 2.5V @ 250µA | 100nC @ 10V | ±20V | 2900pF @ 35V | - | 5.4W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 150V 4A PPAK SO-8 |
214,158 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 4A (Ta) | 10V | 50mOhm @ 5A, 10V | 4.5V @ 250µA | 36nC @ 10V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 60V 9.6A PPAK SO-8 |
81,732 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 9.6A (Ta) | 6V, 10V | 11mOhm @ 12A, 10V | 4V @ 250µA | 57nC @ 10V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Microchip Technology |
MOSFET N-CH 240V 360MA SOT89-3 |
146,034 |
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- | N-Channel | MOSFET (Metal Oxide) | 240V | 360mA (Tj) | 4.5V, 10V | 6Ohm @ 500mA, 10V | 2V @ 1mA | - | ±20V | 125pF @ 25V | - | 1.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
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STMicroelectronics |
MOSFET N-CH 60V 55A D2PAK |
52,380 |
|
STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 60V | 55A (Tc) | 10V, 5V | 18mOhm @ 27.5A, 10V | 4.7V @ 250µA | 37nC @ 4.5V | ±16V | 1700pF @ 25V | - | 95W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 120V POWER56 |
42,048 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 120V | 11.6A (Ta), 35A (Tc) | 6V, 10V | 11.5mOhm @ 11.6A, 10V | 4V @ 250µA | 46nC @ 10V | ±20V | 2735pF @ 60V | - | 2.5W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Nexperia |
MOSFET N-CH 40V 100A LFPAK |
150,066 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 1.1mOhm @ 25A, 10V | 2.2V @ 1mA | 127nC @ 10V | ±20V | 8845pF @ 20V | - | 198W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Vishay Siliconix |
MOSFET N-CH 80V 7.6A PPAK SO-8 |
573,078 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 7.6A (Ta) | 6V, 10V | 16.5mOhm @ 10A, 10V | 2V @ 250µA (Min) | 41nC @ 10V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET N-CH 40V 19A DIRECTFET |
228,924 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 19A (Ta), 106A (Tc) | 4.5V, 10V | 5mOhm @ 19A, 10V | 2.25V @ 250µA | 44nC @ 4.5V | ±20V | 3765pF @ 20V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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ON Semiconductor |
MOSFET N CH 60V 25A 8-PQFN |
253,626 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 25A (Ta), 80A (Tc) | 4.5V, 10V | 2.5mOhm @ 25A, 10V | 3V @ 250µA | 165nC @ 10V | ±20V | 12530pF @ 30V | - | 2.5W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
|
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Infineon Technologies |
MOSFET N-CH 30V 78A TO220AB |
68,694 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 78A (Tc) | 4.5V, 10V | 4.8mOhm @ 40A, 10V | 2.35V @ 50µA | 23nC @ 4.5V | ±20V | 2139pF @ 15V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia |
MOSFET N-CH 150V 45.1A D2PAK |
24,978 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 45.1A (Tc) | 10V | 42mOhm @ 20A, 10V | 4V @ 1mA | 32nC @ 10V | ±20V | 1770pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH TO252-3 |
58,776 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 90A (Tc) | 4.5V, 10V | 6.6mOhm @ 90A, 10V | 2.1V @ 90µA | 98nC @ 10V | ±16V | 6250pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 60V 16A TO-220 |
23,466 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 60V | 16A (Tc) | 10V | 100mOhm @ 8A, 10V | 4V @ 250µA | 13nC @ 10V | ±20V | 315pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |