GeneSiC Semiconductor 整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
制造商GeneSiC Semiconductor
記錄 764
頁面 2/26
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向(Vr)(最大值) | 電流-平均整流(Io) | 電壓-正向(Vf)(最大值)@如果 | 速度 | 反向恢復時間(trr) | 當前-反向泄漏@ Vr | 電容@ Vr,F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GeneSiC Semiconductor |
SIC DIODE 1200V 15A TO-247-2 |
8,628 |
|
- | Silicon Carbide Schottky | 1200V | 75A (DC) | 1.8V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 14µA @ 1200V | 1089pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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|
GeneSiC Semiconductor |
SIC DIODE 1200V 20A TO-220-2 |
7,584 |
|
- | Silicon Carbide Schottky | 1200V | 94A (DC) | 1.8V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 18µA @ 1200V | 1298pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
GeneSiC Semiconductor |
SIC DIODE 650V 50A TO-247-2 |
7,308 |
|
- | Silicon Carbide Schottky | 650V | 50A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | - | - | Through Hole | TO-247-2 | TO-247-2 | 175°C (Max) |
|
|
GeneSiC Semiconductor |
SIC DIODE 1200V 20A TO-247-2 |
6,120 |
|
- | Silicon Carbide Schottky | 1200V | 90A (DC) | 1.8V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 18µA @ 1200V | 1298pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 400V 70A DO5 |
8,772 |
|
- | Standard, Reverse Polarity | 400V | 70A | 1.4V @ 70A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
|
|
GeneSiC Semiconductor |
SIC DIODE 1700V 10A TO-247-2 |
7,692 |
|
- | Silicon Carbide Schottky | 1700V | 50A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 12µA @ 1700V | 669pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 45V 80A DO5 |
92 |
|
- | Schottky | 45V | 80A | 650mV @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 45V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -55°C ~ 150°C |
|
|
GeneSiC Semiconductor |
SIC SCHOTTKY 3300V 5A TO-263-7 |
6,948 |
|
- | Silicon Carbide Schottky | 3300V | 14A (DC) | 3V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 3kV | 288pF @ 1V, 1MHz | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | TO-263-7 | -55°C ~ 175°C |
|
|
GeneSiC Semiconductor |
SIC DIODE 1700V 50A TO-247-2 |
7,392 |
|
- | Silicon Carbide Schottky | 1700V | 216A (DC) | 1.8V @ 50A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 1700V | 3193pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 650V 1A DO214AA |
25,488 |
|
- | Silicon Carbide Schottky | 650V | 1A (DC) | 2V @ 1A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 6.5V | 76pF @ 1V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA | -55°C ~ 175°C |
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 1.2KV 1A TO220AC |
14,694 |
|
- | Silicon Carbide Schottky | 1200V | 1A | 1.8V @ 1A | No Recovery Time > 500mA (Io) | 0ns | 2µA @ 1200V | 69pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
|
|
GeneSiC Semiconductor |
SIC DIODE 1200V 5A TO-252-2 |
6,858 |
|
- | Silicon Carbide Schottky | 1200V | 27A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 4µA @ 1200V | 359pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 50V 6A DO4 |
14,388 |
|
- | Standard | 50V | 6A | 1.4V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
|
|
GeneSiC Semiconductor |
SIC DIODE 1200V 8A TO-252-2 |
7,218 |
|
- | Silicon Carbide Schottky | 1200V | 40A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 7µA @ 1200V | 545pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
|
|
GeneSiC Semiconductor |
SIC DIODE 1200V 10A TO-252-2 |
8,676 |
|
- | Silicon Carbide Schottky | 1200V | 50A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 1200V | 660pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 400V 30A DO5 |
6,480 |
|
- | Standard, Reverse Polarity | 400V | 30A | 1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 100V 50A DO5 |
8,766 |
|
- | Standard, Reverse Polarity | 100V | 50A | 1V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -55°C ~ 150°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 400V 85A DO5 |
7,008 |
|
- | Standard, Reverse Polarity | 400V | 85A | 1.4V @ 85A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 1.2KV 20A TO247AC |
6,432 |
|
- | Silicon Carbide Schottky | 1200V | 20A | 2V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 968pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247AC | -55°C ~ 175°C |
|
|
GeneSiC Semiconductor |
SIC DIODE 1700V 25A TO-247-2 |
6,768 |
|
- | Silicon Carbide Schottky | 1700V | 110A (DC) | 1.8V @ 25A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 1700V | 1596pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 45V 200A D-67 |
6,822 |
|
- | Schottky, Reverse Polarity | 45V | 200A | 700mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 45V | - | Chassis Mount | D-67 | D-67 | -55°C ~ 150°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 600V 40A DO5 |
6,642 |
|
- | Standard, Reverse Polarity | 600V | 40A | 1.1V @ 40A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 190°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 600V 85A DO5 |
8,208 |
|
- | Standard | 600V | 85A | 1.1V @ 85A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 180°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1.2KV 85A DO5 |
8,388 |
|
- | Standard | 1200V | 85A | 1.1V @ 85A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 180°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 600V 85A DO5 |
7,848 |
|
- | Standard, Reverse Polarity | 600V | 85A | 1.1V @ 85A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 180°C |
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 40V 50A DO5 |
7,470 |
|
- | Schottky | 40V | 50A | 700mV @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 30V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 100V 12A DO4 |
7,002 |
|
- | Standard | 100V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 200V 12A DO4 |
5,472 |
|
- | Standard | 200V | 12A | 1.4V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 600V 12A DO4 |
6,468 |
|
- | Standard, Reverse Polarity | 600V | 12A | 1.4V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 600V 15A DO5 |
8,946 |
|
- | Standard | 600V | 15A | 1.5V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 175°C |