Infineon Technologies 整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
制造商Infineon Technologies
記錄 720
頁面 6/24
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
DUMMY 57 |
6,858 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
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Infineon Technologies |
DIODE SCHOTTKY 600V 4A TO220-2 |
7,038 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 4A (DC) | 2.3V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 25µA @ 600V | 80pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 6A TO252-3 |
8,064 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 6A (DC) | 2.3V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 130pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 8A VSON-4 |
8,460 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 140µA @ 650V | 250pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 15A WAFER |
5,958 |
|
- | Standard | 1200V | 15A | 2.05V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 3.5µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
SIC DIODES |
5,778 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 24A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 27µA @ 420V | 401pF @ 1V, 1MHz | Surface Mount | 10-PowerSOP Module | PG-HDSOP-10-1 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 15A WAFER |
5,328 |
|
- | Standard | 1200V | 15A (DC) | 1.97V @ 7.5A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 5A TO220-2 |
2,898 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 5A (DC) | 2.3V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 600V | 110pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 8A TO263-2 |
8,856 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 8A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | - | 250pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 60A TO247-3 |
5,760 |
|
- | Standard | 600V | 60A (DC) | 2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 143ns | 40µA @ 600V | - | Through Hole | TO-247-3 | TO-247-3 | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 60A TO247-3 |
6,444 |
|
- | Standard | 600V | 60A (DC) | 2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 143ns | 40µA @ 600V | - | Through Hole | TO-247-3 | TO-247-3 | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 9A TO263-2 |
8,910 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 9A (DC) | 1.8V @ 9A | No Recovery Time > 500mA (Io) | 0ns | 1.6mA @ 650V | 270pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
AC/DC DIGITAL PLATFORM |
2,970 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 10A VSON-4 |
2,970 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 650V | 300pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 6A TO220-2 |
3,690 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 6A (DC) | 2.3V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 130pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
SIC DIODES |
7,002 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 29A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 33µA @ 420V | 495pF @ 1V, 1MHz | Surface Mount | 10-PowerSOP Module | PG-HDSOP-10-1 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 8A TO252-3 |
7,650 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 8A (DC) | 2.1V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 70µA @ 600V | 240pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 10A TO263-2 |
3,096 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 10A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | - | 300pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 80A TO247-3 |
3,780 |
|
- | Standard | 600V | 80A (DC) | 2V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 115ns | 40µA @ 600V | - | Through Hole | TO-247-3 | PG-TO247-3 | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 25A WAFER |
4,122 |
|
- | Standard | 1200V | 25A | 2.05V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 5.2µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 25A WAFER |
8,712 |
|
- | Standard | 1200V | 25A (DC) | 1.97V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 20µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 9A TO252-3 |
2,178 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 9A (DC) | 2.1V @ 9A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 12A VSON-4 |
5,868 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 190µA @ 650V | 360pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
SIC DIODES |
8,964 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 34A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 420V | 594pF @ 1V, 1MHz | Surface Mount | 10-PowerSOP Module | PG-HDSOP-10-1 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 12A TO263-2 |
8,802 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 12A (DC) | 1.8V @ 12A | No Recovery Time > 500mA (Io) | 0ns | - | 360pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 10A TO252-3 |
8,028 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 10A (DC) | 2.1V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 90µA @ 600V | 290pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 8A TO220-2 |
2,754 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 8A (DC) | 2.1V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 70µA @ 600V | 240pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 35A WAFER |
6,426 |
|
- | Standard | 1200V | 35A | 2.05V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 7.7µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 9A TO220-2 |
4,518 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 9A (DC) | 2.1V @ 9A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
SIC DIODES |
6,696 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 43A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 53µA @ 420V | 783pF @ 1V, 1MHz | Surface Mount | 10-PowerSOP Module | PG-HDSOP-10-1 | -55°C ~ 175°C |