Infineon Technologies 整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
制造商Infineon Technologies
記錄 720
頁面 7/24
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 35A WAFER |
4,770 |
|
- | Standard | 1200V | 35A (DC) | 1.97V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
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Infineon Technologies |
DIODE SCHOTTKY 600V 10A TO220-2 |
6,570 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 10A (DC) | 2.1V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 90µA @ 600V | 290pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 12A TO220-2 |
3,870 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 12A (DC) | 2.1V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 310pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
SIC DIODES |
2,736 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 51A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 67µA @ 420V | 970pF @ 1V, 1MHz | Surface Mount | 10-PowerSOP Module | PG-HDSOP-10-1 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 50A WAFER |
7,326 |
|
- | Standard | 1200V | 50A | 2.05V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 50A WAFER |
7,794 |
|
- | Standard | 1200V | 50A (DC) | 1.97V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 75A WAFER |
8,928 |
|
- | Standard | 1200V | 75A | 2.05V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 14µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 75A WAFER |
5,076 |
|
- | Standard | 1200V | 75A (DC) | 1.97V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
IC DIODE EMITTER CTLR WAFER |
6,102 |
|
- | - | - | - | - | - | - | - | - | Surface Mount | Die | Sawn on foil | - |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 10A TO247-3 |
8,730 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 650V | 300pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 100A WAFER |
3,816 |
|
- | Standard | 1200V | 100A | 2.05V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 18µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 100A WAFER |
6,804 |
|
- | Standard | 1200V | 100A (DC) | 1.97V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 12A TO247-3 |
8,838 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 190µA @ 650V | 360pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DUMMY 57 |
7,956 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 150A WAFER |
4,860 |
|
- | Standard | 1200V | 150A | 2.05V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 26µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 16A TO247-3 |
2,952 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 16A (DC) | 1.7V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 470pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
IC DIODE EMITTER CTLR WAFER |
5,166 |
|
- | - | - | - | - | - | - | - | - | Surface Mount | Die | Sawn on foil | - |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 200A WAFER |
8,334 |
|
- | Standard | 1200V | 200A (DC) | 1.41V @ 45A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 20A TO247-3 |
8,586 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 20A (DC) | 1.7V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 210µA @ 650V | 590pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
THYR / DIODE MODULE DK |
4,086 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
IC DIODE EMITTER CTLR WAFER |
7,380 |
|
- | - | - | - | - | - | - | - | - | Surface Mount | Die | Sawn on foil | - |
|
|
|
Infineon Technologies |
IC DIODE EMITTER CTLR WAFER |
6,912 |
|
- | - | - | - | - | - | - | - | - | Surface Mount | Die | Sawn on foil | - |
|
|
|
Infineon Technologies |
HIGH POWER THYR / DIO |
8,928 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
STD THYR/DIODEN DISC |
4,716 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
STD THYR/DIODEN DISC |
2,088 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
STD THYR/DIODEN DISC |
7,614 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
STD THYR/DIODEN DISC |
6,516 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
STD THYR/DIODEN DISC |
4,986 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
STD THYR/DIODEN DISC |
4,338 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
STD THYR/DIODEN DISC |
7,542 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |