Infineon Technologies 晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Infineon Technologies
記錄 6,749
頁面 102/225
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
PLANAR >= 100V |
4,392 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 230mOhm @ 13A, 10V | 4V @ 250µA | 120nC @ 10V | ±30V | 3450pF @ 25V | - | 277W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
HIGH POWER_LEGACY |
4,734 |
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CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | ±20V | 3240pF @ 100V | - | 277.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 60V 31A TO-262 |
4,122 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 31A (Tc) | 10V | 99mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | ±20V | 2800pF @ 100V | - | 255W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 60V 31A TO-262 |
7,146 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 31A (Tc) | 10V | 105mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | ±20V | 2800pF @ 100V | - | 255W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 600V 31A TO-220 |
5,526 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 31A (Tc) | 10V | 105mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | ±20V | 2800pF @ 100V | - | 255W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 900V TO-247 |
5,454 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 15A (Tc) | 10V | 340mOhm @ 9.2A, 10V | 3.5V @ 1mA | 94nC @ 10V | ±20V | 2400pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 16A TO-220FP |
5,184 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 68nC @ 10V | ±20V | 2850pF @ 400V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V 35A TO220-3 |
5,166 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 35A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 68nC @ 10V | ±20V | 2850pF @ 400V | - | 162W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 25A TO-247 |
4,662 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 125mOhm @ 16A, 10V | 3.5V @ 1.1mA | 70nC @ 10V | ±20V | 2500pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V TO247-4 |
3,150 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 37.9A (Tc) | 10V | 99mOhm @ 14.5A, 10V | 4.5V @ 1.21mA | 70nC @ 10V | ±20V | 3330pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
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Infineon Technologies |
MOSFET N-CH 650V TO220-3 |
8,568 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 65mOhm @ 17.1A, 10V | 4V @ 850µA | 64nC @ 10V | ±20V | 3020pF @ 400V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V TO-220-3 |
3,312 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 33A (Tc) | 10V | 65mOhm @ 17.1A, 10V | 4V @ 850µA | 64nC @ 10V | ±20V | 3020pF @ 400V | - | 171W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
4,356 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
4,500 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 800V TO247 |
6,732 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
AUTOMOTIVE |
2,448 |
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Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 290mOhm @ 11A, 10V | 3.9V @ 1mA | 117nC @ 10V | ±20V | 2300pF @ 100V | - | 227W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 57.7A TO220 |
8,100 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 57.7A (Tc) | 10V | 74mOhm @ 21A, 10V | 3.5V @ 1.4mA | 138nC @ 10V | ±20V | 3020pF @ 100V | - | 480.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V TO247-4 |
7,164 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 53.5A (Tc) | 10V | 70mOhm @ 20.6A, 10V | 4.5V @ 1.72mA | 100nC @ 10V | ±20V | 4750pF @ 100V | - | 391W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
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Infineon Technologies |
MOSFET N-CH 600V 35A TO247 |
7,866 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 35A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 68nC @ 10V | ±20V | 2850pF @ 400V | - | 162W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 31A TO-247 |
7,416 |
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Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 31A (Tc) | 10V | 105mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | ±20V | 2800pF @ 100V | - | 255W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
HIGH POWER_LEGACY |
4,176 |
|
CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 43.3A (Tc) | 10V | 80mOhm @ 17.6A, 10V | 4.5V @ 1.8mA | 167nC @ 10V | ±20V | 5030pF @ 100V | - | 391W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 35A TO247-4 |
5,220 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 35A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 68nC @ 10V | ±20V | 2850pF @ 400V | - | 162W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
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Infineon Technologies |
MOSFET N-CH 650V 57.7A TO220 |
6,102 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 57.7A (Tc) | 10V | 74mOhm @ 13.9A, 10V | 3.5V @ 1.4mA | 17nC @ 10V | ±20V | 3020pF @ 100V | - | 480.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
2,862 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
TRANSISTOR N-CH |
7,146 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 650V TO247-4 |
8,244 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 33A (Tc) | 10V | 65mOhm @ 17.1A, 10V | 4V @ 850µA | 64nC @ 10V | ±20V | 3020pF @ 400V | - | 171W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
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Infineon Technologies |
TRANSISTOR N-CH |
6,714 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 650V 46A TO-263-3 |
8,982 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 46A (Tc) | 10V | 45mOhm @ 24.9A, 10V | 4V @ 1.25mA | 93nC @ 10V | ±20V | 4340pF @ 400V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Infineon Technologies |
MOSFET N-CH BARE DIE |
8,100 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Infineon Technologies |
MOSFET N-CH 150V 171A AUTO |
2,988 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 171A (Tc) | 10V | 5.9mOhm @ 103A, 10V | 5V @ 250µA | 227nC @ 10V | ±30V | 10470pF @ 50V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |