Infineon Technologies 晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Infineon Technologies
記錄 6,749
頁面 178/225
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型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
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Infineon Technologies |
MOSFET N-CH 200V 13A DPAK |
4,770 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 13A (Tc) | 10V | 235mOhm @ 8A, 10V | 5.5V @ 250µA | 38nC @ 10V | ±30V | 830pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 200V 13A DPAK |
6,300 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 13A (Tc) | 10V | 235mOhm @ 8A, 10V | 5.5V @ 250µA | 38nC @ 10V | ±30V | 830pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
3,474 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 7.5mOhm @ 42A, 10V | 4V @ 100µA | 95nC @ 10V | ±20V | 2840pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 80V 70A DPAK |
3,924 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 70A (Tc) | 10V | 14mOhm @ 18A, 10V | 5.5V @ 250µA | 94nC @ 10V | ±20V | 3510pF @ 25V | - | 3.8W (Ta), 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 161A DPAK |
8,298 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 161A (Tc) | 4.5V, 10V | 3.3mOhm @ 15A, 10V | 2.3V @ 250µA | 50nC @ 4.5V | ±20V | 4380pF @ 15V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 48A DPAK |
2,898 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 48A (Tc) | 10V | 25mOhm @ 29A, 10V | 5.5V @ 250µA | 89nC @ 10V | ±20V | 3430pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 48A DPAK |
6,336 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 48A (Tc) | 10V | 25mOhm @ 29A, 10V | 5.5V @ 250µA | 89nC @ 10V | ±20V | 3430pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
3,312 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4V, 10V | 27mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | ±16V | 1700pF @ 25V | - | 110W (Tc) | - | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 42A DPAK |
2,718 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 42A (Tc) | 10V | 18mOhm @ 33A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 2930pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 44A DPAK |
6,066 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 44A (Tc) | 4.5V, 10V | 16mOhm @ 15A, 10V | 3V @ 250µA | 20nC @ 5V | ±20V | 1650pF @ 25V | - | 62W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 140A DPAK |
8,640 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 140A (Ta) | 4.5V, 10V | - | - | - | ±20V | - | - | 140W (Tc) | - | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 140A DPAK |
2,322 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 140A (Ta) | 4.5V, 10V | - | - | - | ±20V | - | - | 140W (Tc) | - | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 79A TO-262 |
8,676 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 79A (Tc) | 10V | 8.4mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | ±20V | 2290pF @ 50V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 40V 75A TO-262 |
6,138 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 3.7mOhm @ 75A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 4340pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 30V 75A TO-262 |
5,238 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 75A (Tc) | 10V | 2.4mOhm @ 75A, 10V | 4V @ 150µA | 240nC @ 10V | ±20V | 6320pF @ 25V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 100V 97A D2PAK |
8,136 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 97A (Tc) | 10V | 9mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | ±20V | 4820pF @ 50V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 62A TO-262 |
4,014 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 62A (Tc) | 10V | 26mOhm @ 46A, 10V | 5V @ 250µA | 98nC @ 10V | ±30V | 4600pF @ 25V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 100V 88A TO-262 |
4,500 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 88A (Tc) | 10V | 10mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | ±20V | 5150pF @ 50V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 60V 56A I-PAK |
5,796 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 56A (Tc) | 10V | 8.4mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | ±20V | 2290pF @ 50V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 75V 42A I-PAK |
5,292 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 42A (Tc) | 10V | 16mOhm @ 32A, 10V | 4V @ 100µA | 75nC @ 10V | ±20V | 2190pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 75V 42A I-PAK |
3,544 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 42A (Tc) | 10V | 22mOhm @ 30A, 10V | 4V @ 50µA | 51nC @ 10V | ±20V | 1440pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 60V 43A I-PAK |
6,282 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 43A (Tc) | 10V | 15.8mOhm @ 25A, 10V | 4V @ 50µA | 30nC @ 10V | ±20V | 1150pF @ 50V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 40V 42A I-PAK |
2,700 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 42A (Tc) | 4.5V, 10V | 4.9mOhm @ 42A, 10V | 2.5V @ 100µA | 56nC @ 4.5V | ±16V | 3810pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 65A I-PAK |
4,248 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 65A (Tc) | 4.5V, 10V | 8.4mOhm @ 25A, 10V | 2.35V @ 25µA | 13nC @ 4.5V | ±20V | 1030pF @ 15V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | I-PAK (LF701) | TO-252-4, DPak (3 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 75V 160A D2PAK-7 |
5,724 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 160A (Tc) | 10V | 3.8mOhm @ 110A, 10V | 4V @ 250µA | 260nC @ 10V | ±20V | 7580pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 60V 13.4A DIRECTFET |
3,546 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 13.4A (Ta), 67A (Tc) | 10V | 11mOhm @ 13.4A, 10V | 4.9V @ 100µA | 36nC @ 10V | ±20V | 1350pF @ 25V | - | 3.6W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MZ | DirectFET™ Isometric MZ |
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Infineon Technologies |
MOSFET N-CH 25V 12A DIRECTFET |
5,202 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 12A (Ta), 37A (Tc) | 4.5V, 10V | 5.9mOhm @ 12A, 10V | 2.4V @ 25µA | 13nC @ 4.5V | ±20V | 1190pF @ 13V | - | 1.8W (Ta), 15W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET S1 | DirectFET™ Isometric S1 |
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Infineon Technologies |
MOSFET N-CH 25V 17A DIRECTFET |
4,770 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 17A (Ta), 68A (Tc) | 4.5V, 10V | 4.9mOhm @ 17A, 10V | 2.4V @ 50µA | 18nC @ 4.5V | ±20V | 1570pF @ 13V | - | 2.2W (Ta), 36W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SQ | DirectFET™ Isometric SQ |
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Infineon Technologies |
MOSFET N-CH 25V 29A DIRECTFET |
2,484 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 29A (Ta), 166A (Tc) | 4.5V, 10V | 2.1mOhm @ 29A, 10V | 2.4V @ 100µA | 44nC @ 4.5V | ±20V | 3890pF @ 13V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 25V 34A DIRECTFET |
7,830 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 34A (Ta), 180A (Tc) | 4.5V, 10V | 1.6mOhm @ 34A, 10V | 2.4V @ 100µA | 59nC @ 4.5V | ±20V | 5340pF @ 13V | - | 2.8W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |