Infineon Technologies 晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Infineon Technologies
記錄 6,749
頁面 47/225
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型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
HIGH POWER_NEW |
3,744 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 14A (Tc) | 10V | 195mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | ±20V | 996pF @ 400V | - | 97W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8-2 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 75V 240A D2PAK |
6,282 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 240A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.7V @ 250µA | 428nC @ 10V | ±20V | 13970pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 24V 429A D2PAK-7 |
8,622 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 24V | 240A (Tc) | 10V | 1mOhm @ 160A, 10V | 4V @ 250µA | 252nC @ 10V | ±20V | 7700pF @ 19V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 150V 105A D2PAK-7 |
5,310 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 105A (Tc) | 10V | 11.8mOhm @ 63A, 10V | 5V @ 250µA | 110nC @ 10V | ±20V | 5320pF @ 50V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 40V 160A D2PAK-7 |
2,880 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 10V | 1.6mOhm @ 160A, 10V | 4V @ 250µA | 260nC @ 10V | ±20V | 6930pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N CH 60V 240A D2PAK |
7,830 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 240A (Tc) | 6V, 10V | 1.4mOhm @ 100A, 10V | 3.7V @ 250µA | 354nC @ 10V | ±20V | 12960pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 150V 9A WDSON-2 |
3,472 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 9A (Ta), 45A (Tc) | 8V, 10V | 16.5mOhm @ 30A, 10V | 4V @ 110µA | 35nC @ 10V | ±20V | 2800pF @ 75V | - | 2.8W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 600V 23.8A TO263 |
8,982 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 23.8A (Tc) | 10V | 160mOhm @ 11.3A, 10V | 3.5V @ 750µA | 75nC @ 10V | ±20V | 1660pF @ 100V | - | 176W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 100V 38A D2PAK |
4,644 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 38A (Tc) | 10V | 60mOhm @ 38A, 10V | 4V @ 250µA | 230nC @ 10V | ±20V | 2780pF @ 25V | - | 3.1W (Ta), 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 165A 80V 120V 8HSOF |
7,668 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 165A (Tc) | 6V, 10V | 2.9mOhm @ 80A, 10V | 3.8V @ 108µA | 90nC @ 10V | ±20V | 6370pF @ 40V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 60V 240A D2PAK-7 |
5,094 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 240A (Tc) | 4.5V, 10V | 1.9mOhm @ 180A, 10V | 2.5V @ 250µA | 160nC @ 4.5V | ±16V | 11270pF @ 50V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 650V 16.4A 4VSON |
8,082 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 16.4A (Tc) | 10V | 199mOhm @ 9.9A, 10V | 3.5V @ 660µA | 32nC @ 10V | ±20V | 1520pF @ 100V | - | 139W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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Infineon Technologies |
MOSFET N-CH 650V 17A HSOF-8 |
5,778 |
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CoolMOS™ G7 | N-Channel | MOSFET (Metal Oxide) | 650V | 17A (Tc) | 10V | 150mOhm @ 5.3A, 10V | 4V @ 260µA | 23nC @ 10V | ±20V | 902pF @ 400V | - | 106W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8-2 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 40V 160A TO263-7 |
3,258 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 10V | 2.9mOhm @ 60A, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | 5300pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 55V 75A D2PAK |
2,214 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 3.3mOhm @ 75A, 10V | 4V @ 250µA | 290nC @ 10V | ±20V | 7960pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 100A TO263-3 |
6,678 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 100A (Tc) | 10V | 4.7mOhm @ 80A, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | 5110pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
TRENCH_MOSFETS |
5,094 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 90A | 10V | 16.9mOhm @ 51A, 10V | 5V @ 250µA | 162nC @ 10V | ±20V | 6484pF @ 50V | - | 417W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
TRENCH >=100V |
8,694 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 23A (Ta), 100A (Tc) | 6V, 10V | 2.7mOhm @ 50A, 10V | 3.8V @ 146µA | 111nC @ 10V | ±20V | 8200pF @ 50V | - | 3W (Ta), 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSON-8-3 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 33A DIRECTFETL8 |
7,362 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 33A (Ta), 200A (Tc) | 10V | 1.5mOhm @ 120A, 10V | 4V @ 250µA | 300nC @ 10V | ±20V | 12320pF @ 25V | - | 3.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
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Infineon Technologies |
MOSFET N-CH 40V 375A |
6,768 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 375A (Tc) | 4.5V, 10V | 0.59mOhm @ 195A, 10V | 2.5V @ 250µA | 330nC @ 4.5V | ±20V | 20082pF @ 25V | - | 3.8W (Ta), 341W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
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Infineon Technologies |
TRENCH >=100V |
6,822 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 52A | 10V | 22mOhm @ 52A, 10V | 4V @ 137µA | 43nC @ 10V | ±20V | 3680pF @ 100V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSON-8-3 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 40V 120A TO263-3 |
5,076 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 4.5V, 10V | 1.5mOhm @ 100A, 10V | 2V @ 200µA | 346nC @ 10V | ±20V | 28000pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
80V 200A 2.3MOHM TOLL |
6,786 |
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OptiMOS™-5 | N-Channel | MOSFET (Metal Oxide) | 80V | 200A (Tc) | 6V, 10V | 2.3mOhm @ 100A, 10V | 3.8V @ 130µA | 110nC @ 10V | ±20V | 7670pF @ 40V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 650V 19A TO263-3 |
5,634 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 19A (Tc) | 10V | 120mOhm @ 7.8A, 10V | 4V @ 390µA | 34nC @ 10V | ±20V | 1500pF @ 400V | - | 92W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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Infineon Technologies |
MOSFET N-CH 120V 100A TO263-3 |
8,262 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 120V | 100A (Tc) | 10V | 5.1mOhm @ 100A, 10V | 4V @ 240µA | 185nC @ 10V | ±20V | 11570pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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Infineon Technologies |
MOSFET N-CH 60V 180A TO263-7 |
7,326 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 180A (Tc) | 10V | 1.7mOhm @ 100A, 10V | 4V @ 196µA | 275nC @ 10V | ±20V | 23000pF @ 30V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
100V 150A 3.5MOHM TOLL |
4,590 |
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OptiMOS™-5 | N-Channel | MOSFET (Metal Oxide) | 100V | 150A (Tc) | 6V, 10V | 3.5mOhm @ 75A, 10V | 3.8V @ 110µA | 87nC @ 10V | ±20V | 6110pF @ 50V | - | 166W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 100V 190A D2PAK-7 |
6,714 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 190A (Tc) | 4.5V, 10V | 3.9mOhm @ 110A, 10V | 2.5V @ 250µA | 140nC @ 4.5V | ±16V | 11490pF @ 50V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 650V 20.7A D2PAK |
8,676 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 20.7A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114nC @ 10V | ±20V | 2400pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 8HSOF |
5,418 |
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OptiMOS™-5 | N-Channel | MOSFET (Metal Oxide) | 80V | 240A (Tc) | 6V, 10V | 1.9mOhm @ 100A, 10V | 3.8V @ 160µA | 130nC @ 10V | ±20V | 9264pF @ 40V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |