Infineon Technologies 晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Infineon Technologies
記錄 6,749
頁面 49/225
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型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET_(75V,120V( |
2,034 |
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OptiMOS™-5 | N-Channel | MOSFET (Metal Oxide) | 100V | 300A (Tc) | 6V, 10V | 1.5mOhm @ 100A, 10V | 3.8V @ 275µA | 216nC @ 10V | ±20V | 16011pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 650V 35A TO263-3 |
8,658 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 35A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 68nC @ 10V | ±20V | 2850pF @ 400V | - | 162W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
5,076 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 33A (Tc) | 10V | 65mOhm @ 17.1A, 10V | 4.5V @ 200µA | 64nC @ 10V | ±20V | 3020pF @ 400V | - | 171W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 4VSON |
3,472 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 28A (Tc) | 10V | 70mOhm @ 8.5A, 10V | 4V @ 850µA | 64nC @ 10V | ±20V | 3020pF @ 100V | - | 169W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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Infineon Technologies |
MOSFET N-CH 650V 44A HSOF-8 |
8,982 |
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CoolMOS™ G7 | N-Channel | MOSFET (Metal Oxide) | 650V | 44A (Tc) | 10V | 50mOhm @ 15.9A, 10V | 4V @ 800µA | 68nC @ 10V | ±20V | 2670pF @ 400V | - | 245W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8-2 | 8-PowerSFN |
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Infineon Technologies |
IC GAN FET 600V 23A 8HSOF |
2,700 |
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CoolGaN™ | N-Channel | GaNFET (Gallium Nitride) | 600V | 12.5A (Tc) | - | - | 1.6V @ 960µA | - | -10V | 157pF @ 400V | - | 55.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8-3 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 600V 75A HSOF-8 |
6,426 |
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CoolMOS™ G7 | N-Channel | MOSFET (Metal Oxide) | 600V | 75A (Tc) | 10V | 28mOhm @ 28.8A, 10V | 4V @ 1.44mA | 123nC @ 10V | ±20V | 4820pF @ 400V | - | 391W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8-2 | 8-PowerSFN |
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Infineon Technologies |
IC GAN FET 600V 60A 8HSOF |
5,850 |
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CoolGaN™ | N-Channel | GaNFET (Gallium Nitride) | 600V | 31A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380pF @ 400V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8-3 | 8-PowerSFN |
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Infineon Technologies |
IC GAN FET 600V 60A 20DSO |
3,582 |
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CoolGaN™ | N-Channel | GaNFET (Gallium Nitride) | 600V | 31A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380pF @ 400V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-20-85 | 20-PowerSOIC (0.433", 11.00mm Width) |
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Infineon Technologies |
IC GAN FET 600V 60A 20DSO |
8,280 |
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CoolGaN™ | N-Channel | GaNFET (Gallium Nitride) | 600V | 31A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380pF @ 400V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-20-87 | 20-PowerSOIC (0.433", 11.00mm Width) |
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Infineon Technologies |
MOSFET N-CH 100V 55A TO-220AB |
7,092 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 55A (Tc) | 4V, 10V | 26mOhm @ 29A, 10V | 2V @ 250µA | 140nC @ 5V | ±16V | 3700pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 104A TO-220AB |
14,640 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 104A (Tc) | 4V, 10V | 8mOhm @ 54A, 10V | 2V @ 250µA | 130nC @ 5V | ±16V | 5000pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 9.7A D2PAK |
16,332 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 9.7A (Tc) | 10V | 200mOhm @ 5.7A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 330pF @ 25V | - | 3.8W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 9.3A D2PAK |
18,432 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 9.3A (Tc) | 10V | 300mOhm @ 5.4A, 10V | 4V @ 250µA | 35nC @ 10V | ±20V | 575pF @ 25V | - | 82W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 184A TO220 |
15,600 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 130A (Tc) | 4.5V, 10V | 2.4mOhm @ 68A, 10V | 2.2V @ 100µA | 60nC @ 4.5V | ±20V | 5050pF @ 15V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 5A I-PAK |
10,260 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 5A (Tc) | 10V | 600mOhm @ 2.9A, 10V | 4V @ 250µA | 23nC @ 10V | ±20V | 300pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 650V TO220-3 |
8,424 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 7.2A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 200µA | 15.3nC @ 10V | ±20V | 328pF @ 100V | Super Junction | 68W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET P-CH 100V 6.8A TO-220AB |
18,324 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 6.8A (Tc) | - | 480mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | - | 350pF @ 25V | - | - | - | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO-220-3 |
9,048 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 5.5mOhm @ 30A, 10V | 2.2V @ 250µA | 31nC @ 10V | ±20V | 3200pF @ 15V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 75A D2PAK |
17,604 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 9.4mOhm @ 53A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 3270pF @ 25V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH TO220-3 |
8,628 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 10A | 10V | 450mOhm @ 2.3A, 10V | 3.5V @ 120µA | 13.1nC @ 400V | ±16V | 424pF @ 400V | - | 22.7W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO220-3 |
6,660 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 3.9mOhm @ 80A, 10V | 2V @ 45µA | 78nC @ 10V | ±20V | 6100pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 60V 18.7A TO-220 |
8,148 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 18.7A (Ta) | 10V | 130mOhm @ 13.2A, 10V | 4V @ 1mA | 28nC @ 10V | ±20V | 860pF @ 25V | - | 81.1W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 57A TO-220AB |
18,612 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 57A (Tc) | 10V | 23mOhm @ 28A, 10V | 4V @ 250µA | 130nC @ 10V | ±20V | 3130pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 30A TO220FP |
15,276 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 4V, 10V | 22mOhm @ 17A, 10V | 2V @ 250µA | 48nC @ 5V | ±16V | 1700pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 100V 33A TO-262 |
11,316 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 33A (Tc) | 10V | 44mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | ±20V | 1960pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 85A TO-220AB |
12,204 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 85A (Tc) | 10V | 11mOhm @ 43A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 3210pF @ 25V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 150V 23A TO-220AB |
7,680 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 23A (Tc) | 10V | 70mOhm @ 12A, 10V | 4V @ 250µA | 95nC @ 10V | ±20V | 1300pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 150V 21A TO220-3 |
7,104 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 21A (Tc) | 8V, 10V | 53mOhm @ 18A, 10V | 4V @ 35µA | 12nC @ 10V | ±20V | 887pF @ 75V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 53A TO-247AC |
5,706 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 53A (Tc) | 10V | 20mOhm @ 29A, 10V | 4V @ 250µA | 61nC @ 10V | ±20V | 1500pF @ 25V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |