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Micron Technology Inc. 內存

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類別半導體 / 內存IC / 內存
制造商Micron Technology Inc.
記錄 8,604
頁面 277/287
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制造商
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庫存
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內存接口
時鐘頻率
寫周期-字,頁
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電壓-供電
工作溫度
安裝類型
包裝/箱
供應商設備包裝
MT40A512M8Z90BWC1
Micron Technology Inc.
DDR4 4G DIE 512MX8
6,858
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT41K256M16V00HWC1-N001
Micron Technology Inc.
DDR3 4G DIE 256MX16
5,184
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT41K512M16V91AWC1
Micron Technology Inc.
DDR3 8G DIE 512MX16
4,986
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT41K512M8V00HWC1-N001
Micron Technology Inc.
IC DRAM 4G PARALLEL
8,838
-
Volatile
DRAM
SDRAM - DDR3L
4Gb (512M x 8)
Parallel
-
-
-
1.283V ~ 1.45V
0°C ~ 95°C (TC)
-
-
-
MT46H32M32LFT68MWC2
Micron Technology Inc.
MOBILE DDR 1G DIE 32MX32
2,880
*
-
-
-
-
-
-
-
-
-
-
-
-
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MT46H64M32LFT89MWC2-N1004
Micron Technology Inc.
MOBILE DDR 2G DIE 64MX32
6,660
*
-
-
-
-
-
-
-
-
-
-
-
-
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MT47H64M16U88BWC1
Micron Technology Inc.
DDR2 1G DIE 64MX16
8,910
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT52L256M32D1V01MWC2 MS
Micron Technology Inc.
LPDDR3 8G DIE 256MX32
8,424
*
-
-
-
-
-
-
-
-
-
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-
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MT52L8DBQC-DC
Micron Technology Inc.
SPECIAL/CUSTOM LPDDR3
6,984
*
-
-
-
-
-
-
-
-
-
-
-
-
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MT53B128M32D1Z00NEC2
Micron Technology Inc.
LPDDR4 4G DIE 128MX32
3,400
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53B128M32D1Z00NWC2
Micron Technology Inc.
LPDDR4 4G DIE 128MX32
2,898
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53B192M32D1Z0AMWC1
Micron Technology Inc.
LPDDR4 6G DIE 192MX32
5,400
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
6Gb (192M x 32)
-
-
-
-
1.1V
0°C ~ 85°C (TC)
-
-
-
MT53B192M32D1Z9AMWC1
Micron Technology Inc.
LPDDR4 6G DIE 192MX32
4,230
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
6Gb (192M x 32)
-
-
-
-
1.1V
0°C ~ 85°C (TC)
-
-
-
MT53B256M16D1Z00MWC1
Micron Technology Inc.
LPDDR4 4G DIE 256MX16
4,302
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53B256M32D1Z01MWC1
Micron Technology Inc.
LPDDR4 8G DIE 256MX32
3,240
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53B256M32D1Z91MWC1
Micron Technology Inc.
LPDDR4 8G DIE 256MX32
3,562
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53B512M16D1Z11MWC1
Micron Technology Inc.
LPDDR4 8G DIE 512MX16
7,452
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53B512M16D1Z11MWC2 MS
Micron Technology Inc.
LPDDR4 8G DIE 512MX16
7,722
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53B512M16D1Z11NWC1
Micron Technology Inc.
LPDDR4 8G DIE 512MX16
4,644
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53B512M32D2DS-053 AAT:E
Micron Technology Inc.
IC DRAM 16G 1866MHZ FBGA
3,435
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
16Gb (512M x 32)
-
1866MHz
-
-
1.1V
-40°C ~ 105°C (TA)
Surface Mount
200-WFBGA
200-WFBGA (10x14.5)
MT53B512M64D4NH-062 WT ES:C
Micron Technology Inc.
IC DRAM 32G 1600MHZ FBGA
4,392
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
32Gb (512M x 64)
-
1600MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
272-WFBGA
272-WFBGA (15x15)
MT53D1024M32D4DT-046 AAT:E
Micron Technology Inc.
IC DRAM 32G 2133MHZ FBGA
4,266
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
32Gb (1G x 32)
-
2133MHz
-
-
1.1V
-40°C ~ 105°C (TA)
Surface Mount
200-VFBGA
200-VFBGA (10x14.5)
MT53D1024M32D4DT-046 AUT:E
Micron Technology Inc.
IC DRAM 32G 2133MHZ FBGA
4,104
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
32Gb (1G x 32)
-
2133MHz
-
-
1.1V
-40°C ~ 125°C (TC)
Surface Mount
200-VFBGA
200-VFBGA (10x14.5)
MT53D384M16D1Z1AMWC1
Micron Technology Inc.
LPDDR4 6G DIE 384MX16
4,068
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53D4D1ABP-DC
Micron Technology Inc.
LPDDR4 8G X64 UFBGA
4,878
*
-
-
-
-
-
-
-
-
-
-
-
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-
MT53D4DBFL-DC
Micron Technology Inc.
LPDDR4 QDP
2,646
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53D4DBNW-DC
Micron Technology Inc.
LPDDR4 8G QDP
2,214
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53D512M16D1Z11MWC2 ES
Micron Technology Inc.
LPDDR4 8G DIE 512MX16
6,768
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53D8DBNW-DC
Micron Technology Inc.
LPDDR4 16G FBGA 8DP
4,896
*
-
-
-
-
-
-
-
-
-
-
-
-
-
EDF8164A3MC-GD-F-R TR
Micron Technology Inc.
IC DRAM 8G PARALLEL 800MHZ FBGA
5,130
-
Volatile
DRAM
SDRAM - Mobile LPDDR3
8Gb (128M x 64)
Parallel
800MHz
-
-
1.14V ~ 1.95V
-30°C ~ 85°C (TC)
-
-
-