ON Semiconductor 整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
制造商ON Semiconductor
記錄 2,271
頁面 71/76
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向(Vr)(最大值) | 電流-平均整流(Io) | 電壓-正向(Vf)(最大值)@如果 | 速度 | 反向恢復時間(trr) | 當前-反向泄漏@ Vr | 電容@ Vr,F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
DIODE GEN PURP 200V 3A AXIAL |
5,184 |
|
- | Standard | 200V | 3A | 980mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | - | Through Hole | DO-201AD, Axial | Axial | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 400V 3A AXIAL |
3,834 |
|
- | Standard | 400V | 3A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 20µA @ 400V | - | Through Hole | DO-201AD, Axial | Axial | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 200V 1A DO204AL |
4,914 |
|
- | Standard | 200V | 1A | 980mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | - | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 200V 1A DO204AL |
7,758 |
|
- | Standard | 200V | 1A | 980mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | - | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 400V 1A DO204AL |
5,886 |
|
- | Standard | 400V | 1A | 980mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | - | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 400V 1A DO204AL |
3,996 |
|
- | Standard | 400V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Through Hole | DO-204AL, DO-41, Axial | - | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 200V 1A DO204AL |
2,484 |
|
- | Standard | 200V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | - | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 100V 1A DO204AL |
3,906 |
|
- | Standard | 100V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | - | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 600V 1.7A AXIAL |
5,850 |
|
- | Standard | 600V | 1.7A | 1.05V @ 1.7A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Through Hole | Axial | - | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 600V 2.6A AXIAL |
8,118 |
|
- | Standard | 600V | 2.6A | 1.05V @ 2.6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Through Hole | Axial | - | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 100V 1A DO204AL |
5,688 |
|
- | Standard | 100V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | - | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 200V 1A DO204AL |
6,282 |
|
- | Standard | 200V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | - | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 100V 1A AXIAL |
8,892 |
|
- | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Through Hole | Axial | - | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 200V 1A AXIAL |
8,136 |
|
- | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | - | Through Hole | R-1, Axial | - | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 400V 1A AXIAL |
5,472 |
|
- | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Through Hole | R-1, Axial | - | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 600V 1A TP |
3,276 |
|
- | Standard | 600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TP | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 400V 5A TP |
3,042 |
|
- | Standard | 400V | 5A | 1.5V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 20µA @ 400V | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TP | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 600V 5A TP |
8,748 |
|
- | Standard | 600V | 5A | 1.6V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 50µA @ 600V | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TP | 150°C (Max) |
|
|
ON Semiconductor |
DIODE SCHOTTKY 30V 1A DO41 |
7,992 |
|
- | Schottky | 30V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1mA @ 30V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | 150°C (Max) |
|
|
ON Semiconductor |
DIODE SCHOTTKY 30V 1A DO41 |
6,750 |
|
- | Schottky | 30V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1mA @ 30V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | 125°C (Max) |
|
|
ON Semiconductor |
DIODE SCHOTTKY 50V 1A DO41 |
4,284 |
|
- | Schottky | 50V | 1A | 580mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1mA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | 125°C (Max) |
|
|
ON Semiconductor |
DIODE SCHOTTKY 50V 1A DO41 |
7,722 |
|
- | Schottky | 50V | 1A | 580mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1mA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | 125°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 600V 5A TP |
3,492 |
|
- | Standard | 600V | 5A | 1.3V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 600V | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TP | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 200V 1.1A 2SMD |
5,580 |
|
- | Standard | 200V | 1.1A | 980mV @ 1.1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 200V | - | Surface Mount | 2-SMD, J-Lead | SMD | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 400V 1A DO204AL |
2,898 |
|
- | Standard | 400V | 1A | 980mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | - | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 200V 1A AXIAL |
3,546 |
|
- | Standard | 200V | 1A | 980mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Through Hole | R-1, Axial | - | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 200V 1A AXIAL |
4,320 |
|
- | Standard | 200V | 1A | 980mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Through Hole | R-1, Axial | - | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 80V 100MA |
5,526 |
|
- | Standard | 80V | 100mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 500nA @ 80V | 3pF @ 0.5V, 1MHz | - | - | - | -55°C ~ 125°C |
|
|
ON Semiconductor |
DIODE GEN PURP 100V 1A DO204AL |
5,166 |
|
- | Standard | 100V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | - | 150°C (Max) |
|
|
ON Semiconductor |
DIODE GEN PURP 100V 1A DO204AL |
2,124 |
|
- | Standard | 100V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | - | 150°C (Max) |