整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 1010/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
DIODE SHOCTTKY |
6,858 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE SHOCTTKY |
3,582 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE SHOCTTKY |
4,050 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE SHOCTTKY |
3,870 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE SHOCTTKY |
4,086 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE SHOCTTKY |
7,092 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 2A TO220-2 |
6,408 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 2A (DC) | 1.7V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 35µA @ 650V | 70pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 12A TO220-2 |
4,932 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 190µA @ 650V | 360pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 2A TO263-2 |
2,628 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 2A (DC) | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 330µA @ 650V | 70pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 3A TO263-2 |
8,478 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 3A (DC) | 1.8V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 500µA @ 650V | 100pF @ 1V, 1MHz | Surface Mount | TO-262 | PG-TO263-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 4A TO263-2 |
6,678 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 4A (DC) | 1.8V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 670µA @ 650V | 130pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 5A TO263-2 |
2,214 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 5A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 830µA @ 650V | 160pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 6A TO263-2 |
7,380 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 6A (DC) | 1.8V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 1.1mA @ 650V | 190pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 8A TO263-2 |
5,022 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 8A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 1.4mA @ 650V | 250pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 9A TO263-2 |
3,024 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 9A (DC) | 1.8V @ 9A | No Recovery Time > 500mA (Io) | 0ns | 1.6mA @ 650V | 270pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 10A TO263-2 |
2,070 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 10A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 1.7mA @ 650V | 300pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 12A TO263-2 |
126 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 12A (DC) | 1.8V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 2.1mA @ 650V | 360pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 2A VSON-4 |
5,220 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 2A (DC) | 1.7V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 35µA @ 650V | 70pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 4A VSON-4 |
2,718 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 4A (DC) | 1.7V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 70µA @ 650V | 130pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 6A VSON-4 |
8,676 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 110µA @ 650V | 190pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 8A VSON-4 |
7,578 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 140µA @ 650V | 250pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 10A VSON-4 |
2,034 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 650V | 300pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 12A VSON-4 |
3,474 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 190µA @ 650V | 360pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 150°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 30V 100MA SMD0603 |
7,686 |
|
- | Schottky | 30V | 100mA | 500mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 50µA @ 30V | - | Surface Mount | 0201 (0603 Metric) | DSN0603-2, SOD-962, SMD0603 | 150°C (Max) |
|
|
|
M/A-Com Technology Solutions |
DIODE GEN PURP 75V 200MA DO213AA |
8,802 |
|
Military, MIL-PRF-19500/116 | Standard | 75V | 200mA | 1.2V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 500nA @ 75V | - | Surface Mount | DO-213AA (Glass) | DO-213AA | -65°C ~ 175°C |
|
|
|
M/A-Com Technology Solutions |
DIODE GEN PURP 50V 300MA DO35 |
2,088 |
|
Military, MIL-PRF-19500/231 | Standard | 50V | 300mA (DC) | 740mV @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | 2.5pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
M/A-Com Technology Solutions |
DIODE GEN PURP 125V 300MA |
794 |
|
Military, MIL-PRF-19500/578 & /609 | Standard | 125V | 300mA (DC) | 1.1V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 4.5ns | 100µA @ 125V | - | Through Hole | D, Axial | - | -65°C ~ 175°C |
|
|
|
M/A-Com Technology Solutions |
DIODE GEN PURP 50V 300MA |
8,046 |
|
Military, MIL-PRF-19500/578 & /609 | Standard | 50V | 300mA (DC) | 1V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 90µA @ 50V | - | Through Hole | D, Axial | - | -65°C ~ 175°C |
|
|
|
M/A-Com Technology Solutions |
DIODE GEN PURP 75V 300MA DO35 |
2,052 |
|
Military, MIL-PRF-19500/578 & /609 | Standard | 75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | 100µA @ 75V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
M/A-Com Technology Solutions |
DIODE GEN PURP 50V 300MA |
6,714 |
|
Military, MIL-PRF-19500/578 & /609 | Standard | 50V | 300mA (DC) | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 100µA @ 50V | - | Through Hole | Axial | 05 Plastic Package | -65°C ~ 175°C |