整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 1037/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
DIODE GEN PURP 800V 1.5A DO41 |
5,850 |
|
- | Standard | 800V | 1.5A | 1.7V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 800V | 20pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 1.2KV 7.5A WAFER |
7,884 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 7.5A (DC) | 1.8V @ 7.5A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 1200V | 380pF @ 1V, 1MHz | Surface Mount | Die | Sawn on foil | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 1.2KV 7.5A WAFER |
7,344 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 7.5A (DC) | 1.8V @ 7.5A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 1200V | 380pF @ 1V, 1MHz | Surface Mount | Die | Sawn on foil | -55°C ~ 175°C |
|
|
|
SMC Diode Solutions |
DIODE GEN PURP 1KV 1A R-1 |
2,934 |
|
- | Standard | 1000V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 15pF @ 4V, 1MHz | Through Hole | R-1, Axial | R-1 | -65°C ~ 125°C |
|
|
|
SMC Diode Solutions |
DIODE GEN PURP 1KV 3A DO201AD |
4,770 |
|
- | Standard | 1000V | 3A | 1.2V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 30pF @ 0V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
|
SMC Diode Solutions |
DIODE GEN PURP 1KV 2A DO15 |
4,878 |
|
- | Standard | 1000V | 2A | 1.2V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 30pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -65°C ~ 125°C |
|
|
|
WeEn Semiconductors |
DIODE SCHOTTKY 650V 8A TO220AC |
4,320 |
|
- | Silicon Carbide Schottky | 650V | 8A | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 230µA @ 650V | 260pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
WeEn Semiconductors |
DIODE SCHOTTKY 650V 20A TO220AC |
2,088 |
|
- | Silicon Carbide Schottky | 650V | 20A | 1.7V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 500µA @ 650V | 600pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 10A TO220-2 |
5,184 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 650V | 300pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V TO220-2 |
2,214 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V TO220-2 |
6,480 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V TO220-2 |
5,148 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V TO220-2 |
7,182 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V TO220-2 |
7,524 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V TO220-2 |
3,078 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 1.2KV 500MA DO214 |
2,988 |
|
- | Standard | 1200V | 500mA | 2V @ 500mA | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1200V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMAE) | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 1.5KV 500MA DO214 |
7,884 |
|
- | Standard | 1500V | 500mA | 2V @ 500mA | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1500V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMAE) | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 1.8KV 500MA DO214 |
2,250 |
|
- | Standard | 1800V | 500mA | 2V @ 500mA | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1800V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMAE) | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 200V 4A TO252 |
5,634 |
|
- | Standard | 200V | 4A | 1V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 100µA @ 200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | -65°C ~ 175°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 45V 100MA ESC |
7,038 |
|
- | Schottky | 45V | 100mA | 600mV @ 50mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 10V | 18pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | ESC | -40°C ~ 100°C |
|
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|
STMicroelectronics |
DIODE SCHOTTKY 20V 2FLIPCHIP |
3,924 |
|
ECOPACK® | Schottky | 20V | - | 560mV @ 300mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 6µA @ 20V | - | Surface Mount | 2-XFBGA, FCBGA | 2-FlipChip | -30°C ~ 85°C |
|
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|
STMicroelectronics |
DIODE GEN PURP 600V 30A TO-3P |
5,058 |
|
ECOPACK® | Standard | 600V | 30A | 1.95V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 20µA @ 600V | - | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 175°C (Max) |
|
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|
Infineon Technologies |
DIODE SCHOTTKY 600V 4A TO252-3 |
7,218 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
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|
Infineon Technologies |
DIODE SCHOTTKY 600V 6A TO252-3 |
7,722 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 50V 10A DO214AB |
8,910 |
|
- | Standard | 50V | 10A | 1.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 50V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 100V 10A DO214AB |
4,176 |
|
- | Standard | 100V | 10A | 1.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 200V 10A DO214AB |
8,838 |
|
- | Standard | 200V | 10A | 1.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 600V 10A DO214AB |
2,448 |
|
- | Standard | 600V | 10A | 1.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 600V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 800V 10A DO214AB |
2,664 |
|
- | Standard | 800V | 10A | 1.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 800V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
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|
Micro Commercial Co |
DIODE GEN PURP 50V 1A DO214AA |
2,100 |
|
- | Standard | 50V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 50V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -50°C ~ 150°C |