整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 1120/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
DIODE GEN PURP 4.2KV 1800A |
8,298 |
|
- | Standard | 4200V | 1800A | 1.32V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 4200V | - | Chassis Mount | DO-200AC, K-PUK | - | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 400V 255A |
7,632 |
|
- | Standard | 400V | 255A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 400V | - | Stud Mount | DO-205AA, DO-8, Stud | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 200V 255A |
8,118 |
|
- | Standard | 200V | 255A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 200V | - | Stud Mount | DO-205AA, DO-8, Stud | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 400V 255A |
2,718 |
|
- | Standard | 400V | 255A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 400V | - | Stud Mount | DO-205AA, DO-8, Stud | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 255A |
8,064 |
|
- | Standard | 600V | 255A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 600V | - | Stud Mount | DO-205AA, DO-8, Stud | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 6400A |
5,148 |
|
- | Standard | 600V | 6400A | 1.15V @ 10000A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 600V | - | Chassis Mount | DO-200AB, B-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 6400A |
6,030 |
|
- | Standard | 600V | 6400A | 1.15V @ 10000A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 600V | - | Chassis Mount | DO-200AB, B-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 6KV 2200A |
8,028 |
|
- | Standard | 6000V | 2200A | 1.8V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 6000V | - | Chassis Mount | DO-200AC, K-PUK | - | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 6.2KV 2200A |
7,398 |
|
- | Standard | 6200V | 2200A | 1.8V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 6200V | - | Chassis Mount | DO-200AC, K-PUK | - | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 6.5KV 2200A |
3,420 |
|
- | Standard | 6500V | 2200A | 1.8V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 6500V | - | Chassis Mount | DO-200AC, K-PUK | - | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 5.8KV 3910A |
5,220 |
|
- | Standard | 5800V | 3910A | 1.7V @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 5800V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 5.8KV 4090A |
4,050 |
|
- | Standard | 5800V | 4090A | 1.7V @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 5800V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |
|
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|
Infineon Technologies |
RECTIFIER DIODE DISC |
7,992 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE GEN PURP 4.5KV 1570A |
5,346 |
|
- | Standard | 4500V | 1570A | 3.7V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 250mA @ 4500V | - | Chassis Mount | DO-200AC, K-PUK | - | -40°C ~ 125°C |
|
|
|
Infineon Technologies |
RECTIFIER DIODE MOD 1200V 1150A |
6,534 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
RECTIFIER DIODE MOD 2000V 1150A |
5,868 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE GEN PURP 3.6KV 700A MODULE |
5,742 |
|
- | Standard | 3600V | 700A | 1.71V @ 1200A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 3600V | - | Chassis Mount | Module | Module | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 12A TO252-3 |
4,806 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 12A (DC) | 2.1V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 310pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
|
|
|
WeEn Semiconductors |
DIODE GEN PURP 600V 30A D2PAK |
7,758 |
|
- | Standard | 600V | 30A | 2.75V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
|
|
|
WeEn Semiconductors |
DIODE GEN PURP 600V 30A TO220AC |
6,624 |
|
- | Standard | 600V | 30A | 1.55V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
WeEn Semiconductors |
DIODE GEN PURP 600V 30A D2PAK |
6,660 |
|
- | Standard | 600V | 30A | 1.55V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
|
|
|
WeEn Semiconductors |
DIODE GEN PURP 600V 30A TO-3P |
3,492 |
|
- | Standard | 600V | 30A | 1.8V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 65ns | 10µA @ 600V | - | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 175°C (Max) |
|
|
|
WeEn Semiconductors |
DIODE GEN PURP 600V 30A TO247-2 |
2,394 |
|
- | Standard | 600V | 30A | 1.55V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | 175°C (Max) |
|
|
|
WeEn Semiconductors |
DIODE GEN PURP 600V 30A TO220F |
7,650 |
|
- | Standard | 600V | 30A | 1.55V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | 175°C (Max) |
|
|
|
WeEn Semiconductors |
DIODE SCHOTTKY 650V 4A D2PAK |
8,208 |
|
- | Silicon Carbide Schottky | 650V | 4A | 1.7V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 170µA @ 650V | 130pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
|
|
|
WeEn Semiconductors |
DIODE SCHOTTKY 650V 4A DPAK |
6,912 |
|
- | Silicon Carbide Schottky | 650V | 4A | 1.7V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 170µA @ 650V | 130pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 175°C (Max) |
|
|
|
WeEn Semiconductors |
DIODE SCHOTTKY 650V 4A TO220F |
6,282 |
|
- | Silicon Carbide Schottky | 650V | 4A | 1.7V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 170µA @ 650V | 130pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | 175°C (Max) |
|
|
|
WeEn Semiconductors |
DIODE SCHOTTKY 650V 6A D2PAK |
4,176 |
|
- | Silicon Carbide Schottky | 650V | 6A | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 190pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
|
|
|
WeEn Semiconductors |
DIODE SCHOTTKY 650V 6A DPAK |
5,850 |
|
- | Silicon Carbide Schottky | 650V | 6A | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 190pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 175°C (Max) |
|
|
|
WeEn Semiconductors |
DIODE SCHOTTKY 650V 6A TO220F |
5,490 |
|
- | Silicon Carbide Schottky | 650V | 6A | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 190pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | 175°C (Max) |