整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 896/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向(Vr)(最大值) | 電流-平均整流(Io) | 電壓-正向(Vf)(最大值)@如果 | 速度 | 反向恢復時間(trr) | 當前-反向泄漏@ Vr | 電容@ Vr,F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 2A GP20 |
7,938 |
|
- | Standard | 400V | 2A | 1.1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 400V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 2A GP20 |
8,730 |
|
- | Standard | 600V | 2A | 1.1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 600V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 2A GP20 |
5,364 |
|
- | Standard | 600V | 2A | 1.1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 600V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 2.5A DO201 |
3,456 |
|
- | Standard | 1000V | 2.5A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 3A DO201AD |
6,372 |
|
SUPERECTIFIER® | Standard | 50V | 3A | 1.2V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 50V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO201AD |
7,218 |
|
SUPERECTIFIER® | Standard | 100V | 3A | 1.2V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 100V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO201AD |
8,406 |
|
SUPERECTIFIER® | Standard | 200V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO201AD |
3,762 |
|
SUPERECTIFIER® | Standard | 400V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 400V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO201AD |
5,292 |
|
SUPERECTIFIER® | Standard | 400V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 400V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO201AD |
5,652 |
|
SUPERECTIFIER® | Standard | 400V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 400V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A DO201AD |
8,136 |
|
SUPERECTIFIER® | Standard | 600V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 3A DO201AD |
6,138 |
|
SUPERECTIFIER® | Standard | 800V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 800V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 3A DO201AD |
7,866 |
|
SUPERECTIFIER® | Standard | 1000V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 1000V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1.5A DO204AC |
2,646 |
|
- | Standard | 50V | 1.5A | 1.1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | 8pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1.5A DO204AC |
2,358 |
|
- | Standard | 100V | 1.5A | 1.1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | 8pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1.5A DO204AC |
6,048 |
|
- | Standard | 200V | 1.5A | 1.1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 200V | 8pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1.5A DO204AC |
2,340 |
|
- | Standard | 400V | 1.5A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | 8pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1.5A DO204AC |
3,474 |
|
- | Standard | 600V | 1.5A | 1.1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | 8pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1.5A DO204AC |
3,798 |
|
- | Standard | 800V | 1.5A | 1.1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 800V | 8pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1.5A DO204 |
6,984 |
|
- | Standard | 1000V | 1.5A | 1.1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 8pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 6A P600 |
5,598 |
|
- | Standard | 50V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | 5.5µs | 5µA @ 50V | - | Through Hole | P600, Axial | P600 | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 6A P600 |
7,740 |
|
- | Standard | 50V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | 5.5µs | 5µA @ 50V | - | Through Hole | P600, Axial | P600 | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 6A P600 |
3,132 |
|
- | Standard | 100V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | 5.5µs | 5µA @ 100V | - | Through Hole | P600, Axial | P600 | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 6A P600 |
6,246 |
|
- | Standard | 100V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | 5.5µs | 5µA @ 100V | - | Through Hole | P600, Axial | P600 | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 6A P600 |
6,948 |
|
- | Standard | 200V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | 5.5µs | 5µA @ 200V | - | Through Hole | P600, Axial | P600 | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 6A P600 |
7,344 |
|
- | Standard | 200V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | 5.5µs | 5µA @ 200V | - | Through Hole | P600, Axial | P600 | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 6A P600 |
5,670 |
|
- | Standard | 400V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | 5.5µs | 5µA @ 400V | - | Through Hole | P600, Axial | P600 | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 6A P600 |
7,740 |
|
- | Standard | 400V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | 5.5µs | 5µA @ 400V | - | Through Hole | P600, Axial | P600 | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 4A DO201AD |
2,088 |
|
- | Standard | 600V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 5A TO263AB |
2,520 |
|
- | Standard | 600V | 5A | 1.8V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 20µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |