晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 130/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
MOSFET N-CH 30V 211A 8PQFN |
23,760 |
|
PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 211A (Tc) | 4.5V, 10V | 1.09mOhm @ 38A, 10V | 3V @ 1mA | 65nC @ 4.5V | ±16V | 10250pF @ 15V | Schottky Diode (Body) | 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 60V 10A TO-220F |
21,120 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Tc) | 5V, 10V | 110mOhm @ 5A, 10V | 2.5V @ 250µA | 6.4nC @ 5V | ±20V | 350pF @ 25V | - | 24W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Nexperia |
MOSFET N-CH 110V 23A TO220AB |
82,476 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 110V | 23A (Tc) | 10V | 70mOhm @ 13A, 10V | 4V @ 1mA | 22nC @ 10V | ±20V | 830pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 200V 600MA 4-DIP |
32,958 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 600mA (Ta) | 10V | 1.5Ohm @ 360mA, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
|
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ON Semiconductor |
MOSFET N-CH 400V 3.4A IPAK |
25,638 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 400V | 3.4A (Tc) | 10V | 1.6Ohm @ 1.7A, 10V | 5V @ 250µA | 13nC @ 10V | ±30V | 460pF @ 25V | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 500V 2.4A DPAK |
16,554 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.4A (Tc) | 10V | 3Ohm @ 1.4A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 360pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
Texas Instruments |
40V N-CHANNEL NEXFET POWER MOSF |
24,126 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 159A (Tc) | 4.5V, 10V | 3.5mOhm @ 24A, 4.5V | 2.45V @ 250µA | 63nC @ 10V | ±20V | 5850pF @ 10V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Nexperia |
MOSFET N-CH 40V 75A D2PAK |
65,382 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 5V, 10V | 4mOhm @ 25A, 10V | 2V @ 1mA | 64nC @ 5V | ±15V | 7124pF @ 25V | - | 254W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 40V 32A PPAK SO-8 |
21,870 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 32A (Tc) | 4.5V, 10V | 4.1mOhm @ 10.3A, 10V | 2.5V @ 250µA | 120nC @ 10V | ±20V | 5950pF @ 20V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
|
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Infineon Technologies |
MOSFET N-CH 700V 12.5A TO251 |
13,296 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 12.5A (Tc) | 10V | 360mOhm @ 3A, 10V | 3.5V @ 150µA | 16.4nC @ 10V | ±16V | 517pF @ 400V | - | 59.5W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 60V 45A D2PAK |
25,038 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 45A (Ta) | 10V | 26mOhm @ 22.5A, 10V | 4V @ 250µA | 46nC @ 10V | ±20V | 1725pF @ 25V | - | 2.4W (Ta), 125W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 100V 47A D2PAK |
82,278 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 47A (Tc) | 10V | 28mOhm @ 25A, 10V | 4V @ 1mA | 66nC @ 10V | ±20V | 3100pF @ 25V | - | 166W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 60V 50A TO220AB |
32,082 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 14.8mOhm @ 15A, 10V | 4V @ 1mA | 20.9nC @ 10V | ±20V | 1220pF @ 30V | - | 86W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 40V 10.5A 1212-8 |
49,020 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 10.5A (Ta) | 4.5V, 10V | 7.8mOhm @ 16.4A, 10V | 2.5V @ 250µA | 23nC @ 4.5V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Infineon Technologies |
MOSFET N-CH 60V 75A TO-220AB |
45,990 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 75A (Tc) | 6V, 10V | 7.3mOhm @ 45A, 10V | 3.7V @ 100µA | 87nC @ 10V | ±20V | 3000pF @ 25V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 12A TO-220AB |
22,632 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 12A (Tc) | 10V | 170mOhm @ 7.2A, 10V | 4.9V @ 50µA | 23nC @ 10V | ±20V | 790pF @ 50V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 22A WDSON-2 |
52,374 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 22A (Ta), 90A (Tc) | 10V | 2.8mOhm @ 30A, 10V | 4V @ 102µA | 143nC @ 10V | ±20V | 12000pF @ 30V | - | 2.2W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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ON Semiconductor |
MOSFET P-CH 60V 27.5A D2PAK |
14,070 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 27.5A (Ta) | 10V | 82mOhm @ 25A, 10V | 4V @ 250µA | 50nC @ 10V | ±15V | 1680pF @ 25V | - | 120W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 43A TO-220 |
17,322 |
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SDMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 5.6A (Ta), 43A (Tc) | 7V, 10V | 25mOhm @ 20A, 10V | 4V @ 250µA | 34nC @ 10V | ±25V | 2200pF @ 50V | - | 1.9W (Ta), 115W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 12.7A DIRECTFET |
290,298 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 12.7A (Ta), 55A (Tc) | 4.5V, 10V | 8.3mOhm @ 12.7A, 10V | 2.25V @ 250µA | 29nC @ 4.5V | ±20V | 2560pF @ 20V | - | 2.1W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ ST | DirectFET™ Isometric ST |
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STMicroelectronics |
MOSFET N-CHANNEL 800V 2A IPAK |
27,192 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 800V | 2A (Tc) | 10V | 3.25Ohm @ 1A, 10V | 5V @ 100µA | 2.63nC @ 10V | ±30V | 102pF @ 100V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 55V 22A TO220FP |
14,628 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 22A (Tc) | 4V, 10V | 35mOhm @ 12A, 10V | 2V @ 250µA | 25nC @ 5V | ±16V | 880pF @ 25V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 60V 63A TO-220 |
15,354 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 63A (Tc) | 10V | 12.4mOhm @ 20A, 10V | 4V @ 250µA | 31nC @ 10V | ±20V | 1680pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Texas Instruments |
MOSFET N-CH 60V 100A 8SON |
29,484 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Ta), 100A (Tc) | 4.5V, 10V | 5.9mOhm @ 18A, 10V | 2.3V @ 250µA | 36nC @ 10V | ±20V | 2750pF @ 30V | - | 3.2W (Ta), 116W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 600V 2.2A TO-220AB |
36,264 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 2.2A (Tc) | 10V | 4.4Ohm @ 1.3A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 350pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 5.6A DPAK |
23,490 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 5.6A (Tc) | 10V | 600mOhm @ 3.4A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 390pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 200V 800MA 4-DIP |
15,690 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 800mA (Ta) | 10V | 800mOhm @ 480mA, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Nexperia |
MOSFET N-CH 80V TO220AB |
36,642 |
|
- | N-Channel | MOSFET (Metal Oxide) | 80V | 50A (Tc) | 10V | 17mOhm @ 10A, 10V | 4V @ 1mA | 26nC @ 10V | ±20V | 1573pF @ 40V | - | 103W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia |
MOSFET N-CH 30V 100A TO220AB |
37,140 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 4.3mOhm @ 15A, 10V | 2.15V @ 1mA | 41.5nC @ 10V | ±20V | 2400pF @ 12V | - | 103W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 95A TO-220AB |
17,964 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 95A (Tc) | 6V, 10V | 4.5mOhm @ 57A, 10V | 3.9V @ 50µA | 68nC @ 10V | ±20V | 2110pF @ 25V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |