晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 132/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
MOSFET N-CH 600V 3A TO-220 |
103,878 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 600V | 3A (Tc) | 10V | 3.4Ohm @ 1.5A, 10V | 4V @ 250µA | 14nC @ 10V | ±30V | 565pF @ 25V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Nexperia |
MOSFET N-CH 30V TO220AB |
40,956 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 3.4mOhm @ 10A, 10V | 2.15V @ 1mA | 64nC @ 10V | ±20V | 3907pF @ 12V | - | 114W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 89A D2PAK |
16,188 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 89A (Tc) | 4V, 10V | 10mOhm @ 46A, 10V | 2V @ 250µA | 98nC @ 5V | ±16V | 3600pF @ 25V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Vishay Siliconix |
MOSFET P-CH 100V 13.2A 1212-8 |
26,706 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 13.2A (Tc) | 4.5V, 10V | 134mOhm @ 4A, 10V | 3V @ 250µA | 55nC @ 10V | ±20V | 1480pF @ 50V | - | 3.7W (Ta), 52W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
|
|
|
ON Semiconductor |
MOSFET P-CH 200V 5.2A TO-220F |
61,758 |
|
QFET® | P-Channel | MOSFET (Metal Oxide) | 200V | 5.2A (Tc) | 10V | 690mOhm @ 2.6A, 10V | 5V @ 250µA | 25nC @ 10V | ±30V | 770pF @ 25V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
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|
Vishay Siliconix |
MOSFET P-CH 60V 8.8A I-PAK |
21,684 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 8.8A (Tc) | 10V | 280mOhm @ 5.3A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 570pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Vishay Siliconix |
MOSFET N-CH 250V 3.8A DPAK |
24,666 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 3.8A (Tc) | 10V | 1.1Ohm @ 2.3A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
Infineon Technologies |
MOSFET N-CH 40V 120A TO220 |
21,768 |
|
HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 6V, 10V | 3.3mOhm @ 70A, 10V | 3.9V @ 100µA | 93nC @ 10V | ±20V | 3183pF @ 25V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 40V 50A |
32,178 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 13mOhm @ 17A, 10V | 2.5V @ 250µA | 90nC @ 10V | ±20V | 3590pF @ 20V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Diodes Incorporated |
MOSFET N-CH |
37,404 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 3.4mOhm @ 100A, 10V | 4V @ 250µA | 95.4nC @ 10V | ±20V | 4556pF @ 30V | - | 4.7W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|
ON Semiconductor |
MOSFET N-CH 400V 3A TO-220F |
81,768 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 400V | 3A (Tc) | 10V | 1.6Ohm @ 1.5A, 10V | 4V @ 250µA | 13nC @ 10V | ±30V | 460pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
|
|
STMicroelectronics |
MOSFET N-CH 60V 38A TO-220 |
18,126 |
|
STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 60V | 38A (Tc) | 10V | 28mOhm @ 19A, 10V | 4V @ 250µA | 58nC @ 10V | ±20V | 980pF @ 25V | - | 80W (Tc) | 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 160A TO263-7 |
21,762 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 10V | 1.6mOhm @ 100A, 10V | 4V @ 110µA | 137nC @ 10V | ±20V | 10920pF @ 25V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Vishay Siliconix |
MOSFET P-CH 400V 1.8A DPAK |
49,674 |
|
- | P-Channel | MOSFET (Metal Oxide) | 400V | 1.8A (Tc) | 10V | 7Ohm @ 1.1A, 10V | 4V @ 250µA | 13nC @ 10V | ±20V | 270pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 49A TO-262 |
38,568 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 49A (Tc) | 10V | 17.5mOhm @ 25A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1470pF @ 25V | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 55V 35A TO-220AB |
23,268 |
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UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 55V | 35A (Tc) | 10V | 34mOhm @ 35A, 10V | 4V @ 250µA | 44nC @ 20V | ±20V | 680pF @ 25V | - | 93W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 75A D2PAK |
23,544 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 4.5V, 10V | 3.1mOhm @ 75A, 10V | 2.7V @ 250µA | 110nC @ 5V | ±16V | 5080pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|
Nexperia |
MOSFET N-CH 200V 20A TO220AB |
30,480 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 20A (Tc) | 10V | 130mOhm @ 10A, 10V | 4V @ 1mA | 65nC @ 10V | ±20V | 2470pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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Vishay Siliconix |
MOSFET N-CH 500V 4.5A D2PAK |
93,654 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 1.5Ohm @ 2.7A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 610pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 60V 1.6A 4-DIP |
26,370 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 1.6A (Ta) | 10V | 280mOhm @ 960mA, 10V | 4V @ 1µA | 19nC @ 10V | ±20V | 570pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET N-CHANNEL 100V 86A DPAK |
14,706 |
|
Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 86A (Tc) | 4.5V, 10V | 8.7mOhm @ 25A, 10V | 2.5V @ 250µA | 65nC @ 10V | ±20V | 3500pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-4, DPak (3 Leads + Tab) |
|
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|
Nexperia |
MOSFET N-CH 60V 120A D2PAK |
25,308 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 5V | 2.5mOhm @ 25A, 10V | 2.1V @ 1mA | 92nC @ 5V | ±10V | 15600pF @ 25V | - | 324W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|
Nexperia |
MOSFET N-CH 100V D2PAK |
32,844 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tj) | 10V | 7.6mOhm @ 25A, 10V | 4V @ 1mA | 128nC @ 10V | ±20V | 7110pF @ 50V | - | 296W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
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Vishay Siliconix |
MOSFET P-CH 200V 3.5A TO-220AB |
26,430 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 3.5A (Tc) | 10V | 1.5Ohm @ 1.5A, 10V | 4V @ 250µA | 22nC @ 10V | ±20V | 350pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
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Infineon Technologies |
MOSFET N-CH 100V 23A TO220FP |
21,522 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 23A (Tc) | 4V, 10V | 44mOhm @ 12A, 10V | 2V @ 250µA | 74nC @ 5V | ±16V | 1800pF @ 25V | - | 54W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 500V 6.5A TO-220F |
24,582 |
|
UniFET-II™ | N-Channel | MOSFET (Metal Oxide) | 500V | 6.5A (Tc) | 10V | 1.2Ohm @ 4A, 10V | 5V @ 250µA | 18nC @ 10V | ±25V | 735pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
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|
ON Semiconductor |
MOSFET N-CH 100V 55A D2PAK |
29,004 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 55A (Tc) | 10V | 26mOhm @ 27.5A, 10V | 4V @ 250µA | 98nC @ 10V | ±25V | 2730pF @ 25V | - | 3.75W (Ta), 155W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 400V 1.7A I-PAK |
19,974 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 1.7A (Tc) | 10V | 3.6Ohm @ 1A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 170pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
|
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Vishay Siliconix |
MOSFET N-CH 100V 4.3A I-PAK |
18,120 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 4.3A (Tc) | 4V, 5V | 540mOhm @ 2.6A, 5V | 2V @ 250µA | 6.1nC @ 5V | ±10V | 250pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N CH 650V 11A DPAK |
19,200 |
|
MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 455mOhm @ 5.5A, 10V | 4V @ 250µA | 29nC @ 10V | ±25V | 800pF @ 50V | - | 110W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |