晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 178/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
MOSFET N-CH TO263-3 |
13,242 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 31A (Tc) | 10V | 99mOhm @ 10.5A, 10V | 4V @ 530µA | 45nC @ 10V | ±20V | 1952pF @ 400V | - | 117W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|
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STMicroelectronics |
MOSFET N-CH 800V 7A I2PAKFP |
16,038 |
|
MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 800V | 7A (Tc) | 10V | 900mOhm @ 3.5A, 10V | 5V @ 100µA | 12nC @ 10V | ±30V | 340pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
|
|
|
ON Semiconductor |
NMOS TOLL 40V 1.2 MOHM |
17,814 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 0.75mOhm @ 80A, 10V | 4V @ 250µA | 188nC @ 10V | ±20V | 12000pF @ 25V | - | 357W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
|
|
|
STMicroelectronics |
MOSFET N-CH 600V 16A POWERFLAT |
21,852 |
|
MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 3.3A (Ta), 16A (Tc) | 10V | 215mOhm @ 8A, 10V | 5V @ 250µA | 46nC @ 10V | ±25V | 1400pF @ 50V | - | 3W (Ta), 125W (Tc) | 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
|
|
|
STMicroelectronics |
MOSFET N-CH 800V 6A I2PAKFP |
13,626 |
|
SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 950mOhm @ 3A, 10V | 5V @ 100µA | 16.5nC @ 10V | ±30V | 450pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
|
|
|
STMicroelectronics |
MOSFET N-CH 800V 4.5A I2PAK-FP |
14,580 |
|
SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 800V | 4.5A (Tc) | 10V | 1.6Ohm @ 2A, 10V | 5V @ 100µA | 13nC @ 10V | 30V | 270pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
|
|
|
STMicroelectronics |
MOSFET N-CH 600V 6.5A TO220FP |
12,456 |
|
MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 6.5A (Tc) | 10V | 745mOhm @ 3.25A, 10V | 4V @ 250µA | 17.4nC @ 10V | ±25V | 452pF @ 50V | - | 25W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
|
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|
Vishay Siliconix |
MOSFET N-CHAN 600V DPAK TO-252 |
21,162 |
|
E | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 240mOhm @ 5.5A, 10V | 5V @ 250µA | 23nC @ 10V | ±30V | 783pF @ 100V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 4VSON |
28,956 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 33A (Tc) | 10V | 105mOhm @ 10.5A, 10V | 4V @ 530µA | 45nC @ 10V | ±20V | 1952pF @ 400V | - | 137W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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|
Vishay Siliconix |
MOSFET N-CH 650V 15A PWRPAK 8X8 |
29,640 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 260mOhm @ 7A, 10V | 4V @ 250µA | 96nC @ 10V | ±30V | 1712pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
|
|
|
STMicroelectronics |
MOSFET N-CH 600V 10A I2PAK FP |
13,038 |
|
SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750mOhm @ 4.5A, 10V | 4.5V @ 250µA | 70nC @ 10V | ±30V | 1370pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
|
|
|
Vishay Siliconix |
MOSFET N-CH 600V 1.7A TO220FP |
15,852 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 1.7A (Tc) | 10V | 4.4Ohm @ 1A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 350pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
|
|
|
STMicroelectronics |
MOSFET N CH 600V 18A TO281 |
9,552 |
|
MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 190mOhm @ 9A, 10V | 4V @ 250µA | 29nC @ 10V | ±25V | 1060pF @ 100V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
|
|
|
STMicroelectronics |
MOSFET N-CH 650V I2PAK-FP |
8,040 |
|
MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 33.3nC @ 10V | ±25V | 983pF @ 50V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
|
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Vishay Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |
16,212 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 1300pF @ 25V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |
16,512 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 42nC @ 10V | ±30V | 1036pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
21,450 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 7.7A (Tc) | 4V, 5V | 200mOhm @ 4.6A, 5V | 2V @ 250µA | 8.4nC @ 5V | ±10V | 400pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Rohm Semiconductor |
R6007JNX IS A POWER MOSFET WITH |
21,210 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 15V | 780mOhm @ 3.5A, 15V | 7V @ 1mA | 17.5nC @ 15V | ±30V | 475pF @ 100V | - | 46W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
|
|
|
STMicroelectronics |
MOSFET N CH 650V 11A I2PAKFP |
16,008 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 340mOhm @ 5.5A, 10V | 5V @ 250µA | 22nC @ 10V | ±25V | 816pF @ 100V | - | 30W (Tc) | 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
|
|
|
Infineon Technologies |
MOSFET NCH 650V 66A PG-HDSOP-10 |
16,350 |
|
CoolMOS™ G7 | N-Channel | MOSFET (Metal Oxide) | 600V | 23A (Tc) | 10V | 102mOhm @ 7.8A, 10V | 4V @ 390µA | 34nC @ 10V | ±20V | 1320pF @ 400V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-10-1 | 10-PowerSOP Module |
|
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ON Semiconductor |
MOSFET N-CH 100V 35A TO-220F |
18,858 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 35A (Tc) | 10V | 23mOhm @ 17.5A, 10V | 4V @ 250µA | 110nC @ 10V | ±25V | 3300pF @ 25V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
|
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Vishay Siliconix |
MOSFET N-CH 100V 120A TO262-3 |
11,916 |
|
Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 3.8mOhm @ 20A, 10V | 3.5V @ 250µA | 190nC @ 10V | ±20V | 7230pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
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STMicroelectronics |
MOSFET N-CH 650V 12A D2PAK |
22,620 |
|
MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 45nC @ 10V | ±25V | 1300pF @ 50V | - | 125W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
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Vishay Siliconix |
MOSFET N-CH 60V 120A TO220AB |
9,132 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 7.5V, 10V | 2.4mOhm @ 30A, 10V | 4V @ 250µA | 128nC @ 10V | ±20V | - | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
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STMicroelectronics |
MOSFET N-CH 600V 10A IPAK |
25,362 |
|
MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 550mOhm @ 4A, 10V | 4V @ 250µA | 19nC @ 10V | ±25V | 540pF @ 50V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Rohm Semiconductor |
R6009JNX IS A POWER MOSFET WITH |
18,864 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 15V | 585mOhm @ 4.5A, 15V | 7V @ 1.38mA | 22nC @ 15V | ±30V | 645pF @ 100V | - | 53W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
|
|
|
Vishay Siliconix |
MOSFET N-CH 600V 15A TO220AB |
13,716 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 78nC @ 10V | ±30V | 1350pF @ 100V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
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Vishay Siliconix |
MOSFET N-CH 500V 8A TO-262 |
17,808 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 39nC @ 10V | ±30V | 1100pF @ 25V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 24A ITO220S |
8,424 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 150mOhm @ 4.3A, 10V | 4V @ 250µA | 43nC @ 10V | ±30V | 1765pF @ 100V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
|
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Infineon Technologies |
MOSFET N-CH 650V 11A TO-220 |
18,354 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 29nC @ 10V | ±20V | 1100pF @ 100V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |