晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 175/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Alpha & Omega Semiconductor |
100V N-CHANNEL ALPHASGT TM |
21,642 |
|
AlphaSGT™ | N-Channel | MOSFET (Metal Oxide) | 100V | 31.3A (Ta), 100A (Tc) | 6V, 10V | 3.6mOhm @ 20A, 10V | 3.6V @ 250µA | 95nC @ 10V | ±20V | 5325pF @ 50V | - | 6.2W (Ta), 215W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (5x6) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CH 600V 2A I-PAK |
27,594 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4.4Ohm @ 1.2A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 350pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 50V 8.2A DPAK |
29,076 |
|
- | N-Channel | MOSFET (Metal Oxide) | 50V | 8.2A (Tc) | 10V | 200mOhm @ 4.6A, 10V | 4V @ 250µA | 10nC @ 10V | ±20V | 250pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Taiwan Semiconductor Corporation |
650V 7A SINGLE N-CHANNEL POWER M |
31,578 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 1.35Ohm @ 1.8A, 10V | 3.8V @ 250µA | 25nC @ 10V | ±30V | 1124pF @ 50V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
|
|
|
Taiwan Semiconductor Corporation |
600V 7A SINGLE N-CHANNEL POWER M |
30,708 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 1.2Ohm @ 2A, 10V | 3.8V @ 250µA | 25nC @ 10V | ±30V | 1108pF @ 50V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 250V 630MA 4-DIP |
23,130 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 630mA (Ta) | 10V | 1.1Ohm @ 380mA, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
|
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|
Taiwan Semiconductor Corporation |
500V, 9A, 0.9O SINGLE N-CHANNEL |
31,698 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 9A (Tc) | 10V | 900mOhm @ 2.3A, 10V | 3.8V @ 250µA | 24.5nC @ 10V | ±30V | 1116pF @ 50V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Infineon Technologies |
MOSFET N-CH 950V 6A TO251 |
20,238 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 950V | 6A (Tc) | 10V | 1.2Ohm @ 2.7A, 10V | 3.5V @ 140µA | 15nC @ 10V | ±20V | 478pF @ 400V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 200V 4.8A I-PAK |
26,532 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 4.8A (Tc) | 10V | 800mOhm @ 2.9A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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|
STMicroelectronics |
MOSFET N-CH 600V 2.4A TO-220 |
62,178 |
|
SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 600V | 2.4A (Tc) | 10V | 3.6Ohm @ 1.2A, 10V | 4.5V @ 50µA | 11.8nC @ 10V | ±30V | 311pF @ 25V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
ON Semiconductor |
MOSFET N-CH 600V IPAK |
18,990 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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STMicroelectronics |
MOSFET N-CH 525V 2.5A TO220 |
37,554 |
|
SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 525V | 2.5A (Tc) | 10V | 2.6Ohm @ 1.25A, 10V | 4.5V @ 50µA | 11nC @ 10V | ±30V | 334pF @ 100V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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|
Vishay Siliconix |
MOSFET P-CH 250V 2.7A I-PAK |
28,422 |
|
- | P-Channel | MOSFET (Metal Oxide) | 250V | 2.7A (Tc) | 10V | 3Ohm @ 1.7A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 220pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N-CH 200V 30A D2PAK |
63,366 |
|
STripFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 30A (Tc) | 10V | 75mOhm @ 15A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 1597pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 250V 3.8A I-PAK |
24,180 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 3.8A (Tc) | 10V | 1.1Ohm @ 2.3A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 800V 2.8A IPAK |
21,954 |
|
E | N-Channel | MOSFET (Metal Oxide) | 800V | 2.8A (Tc) | 10V | 2.75Ohm @ 1A, 10V | 4V @ 250µA | 19.6nC @ 10V | ±30V | 315pF @ 100V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Long Leads, IPak, TO-251AB |
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STMicroelectronics |
MOSFET N-CH 30V 75A TO-220AB |
14,682 |
|
DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 30V | 75A (Tc) | 4.5V, 10V | 5.9mOhm @ 37.5A, 10V | 2.5V @ 250µA | 23.8nC @ 4.5V | ±20V | 2030pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 620V 6A TO-251 |
25,506 |
|
- | N-Channel | MOSFET (Metal Oxide) | 620V | 6A (Tc) | 10V | 900mOhm @ 3A, 10V | 4V @ 250µA | 34nC @ 10V | ±30V | 578pF @ 100V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 800V 6A IPAK |
17,250 |
|
SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 850mOhm @ 3A, 10V | 4.5V @ 600µA | 29nC @ 10V | ±20V | 1315pF @ 100V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
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Vishay Siliconix |
MOSFET P-CH 200V 1.9A I-PAK |
20,892 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 1.9A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 4V @ 250µA | 8.9nC @ 10V | ±20V | 170pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N CH 60V 77A TO-220 |
16,698 |
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DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 60V | 77A (Tc) | 10V | 7mOhm @ 38.5A, 10V | 4V @ 250µA | 76nC @ 10V | ±20V | 5300pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 150V 6A POWERFLAT |
29,628 |
|
STripFET™ III | N-Channel | MOSFET (Metal Oxide) | 150V | 25A (Tc) | 10V | 57mOhm @ 3A, 10V | 4V @ 250µA | 29nC @ 10V | ±20V | 1300pF @ 25V | - | 80W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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Texas Instruments |
MOSFET N-CH 60V 100A TO220-3 |
27,576 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 72A (Ta), 100A (Tc) | 4.5V, 10V | 6.3mOhm @ 75A, 10V | 2.3V @ 250µA | 34nC @ 10V | ±20V | 3025pF @ 30V | - | 192W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 5.6A I-PAK |
25,746 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 5.6A (Tc) | 10V | 600mOhm @ 3.4A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 390pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 60V 14A I-PAK |
15,846 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Tc) | 4V, 5V | 100mOhm @ 8.4A, 5V | 2V @ 250µA | 18nC @ 5V | ±10V | 870pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
TRENCH 8 80V NFET |
17,292 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 80V | 28A (Ta), 203A (Tc) | 10V | 2.1mOhm @ 50A, 10V | 4V @ 330µA | 85nC @ 10V | ±20V | 5530pF @ 40V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Vishay Siliconix |
MOSFET N-CHAN 200V PPAK SO-8DC |
59,808 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 8.9A (Ta), 39.6A (Tc) | 7.5V, 10V | 31.9mOhm @ 10A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 1380pF @ 100V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8DC | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 20V 60A POLARPAK |
24,726 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 60A (Tc) | 2.5V, 10V | 1.4mOhm @ 25A, 10V | 2V @ 250µA | 300nC @ 10V | ±12V | 13000pF @ 10V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (L) | 10-PolarPAK® (L) |
|
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ON Semiconductor |
MOSFET N-CH 40V 110A TO263AB |
17,502 |
|
Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 110A (Tc) | 10V | 1.8mOhm @ 80A, 10V | 4V @ 250µA | 138nC @ 10V | ±20V | 7710pF @ 25V | - | 176W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Taiwan Semiconductor Corporation |
500V 13A SINGLE N-CHANNEL POWER |
31,842 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 13A (Tc) | 10V | 480mOhm @ 3.3A, 10V | 3.8V @ 250µA | 39nC @ 10V | ±30V | 1877pF @ 50V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |