晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 183/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STMicroelectronics |
MOSFET N-CH 600V 17A I2PAK FP |
14,748 |
|
MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 17A (Tc) | 10V | 190mOhm @ 8A, 10V | 4V @ 250µA | 46nC @ 10V | ±30V | 1400pF @ 50V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
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STMicroelectronics |
MOSFET N-CH 500V 14A TO-220 |
21,924 |
|
SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 340mOhm @ 7A, 10V | 4.5V @ 100µA | 106nC @ 10V | ±30V | 2260pF @ 25V | - | 160W (Tc) | -50°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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|
STMicroelectronics |
MOSFET N-CH 650V 11A TO-220 |
17,520 |
|
MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 455mOhm @ 5.5A, 10V | 4V @ 250µA | 29nC @ 10V | ±25V | 800pF @ 50V | - | 110W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
STMicroelectronics |
MOSFET N-CH 800V 10.5A TO-220 |
16,692 |
|
SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 800V | 10.5A (Tc) | 10V | 750mOhm @ 5.25A, 10V | 4.5V @ 100µA | 87nC @ 10V | ±30V | 2620pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
STMicroelectronics |
MOSFET N-CH 1050V 6A TO-220AB |
13,740 |
|
MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 1050V | 6A (Tc) | 10V | 1.3Ohm @ 3A, 10V | 5V @ 100µA | 21.5nC @ 10V | 30V | 545pF @ 100V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
STMicroelectronics |
MOSFET N-CH 1050V 6A TO220FP |
16,380 |
|
MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 1050V | 6A (Tc) | 10V | 1.3Ohm @ 3A, 10V | 5V @ 100µA | 21.5nC @ 10V | 30V | 545pF @ 100V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
|
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|
Infineon Technologies |
MOSFET N-CH 600V 23.8A TO247 |
8,226 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 23.8A (Tc) | 10V | 160mOhm @ 11.3A, 10V | 3.5V @ 750µA | 75nC @ 10V | ±20V | 1660pF @ 100V | - | 176W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
|
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|
STMicroelectronics |
MOSFET N CH 650V 22A I2PAKFP |
16,842 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 22A (Tc) | 10V | 148mOhm @ 11A, 10V | 5V @ 250µA | 45nC @ 10V | ±25V | 1865pF @ 100V | - | 30W (Tc) | 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
|
|
|
ON Semiconductor |
MOSFET N-CH 100V 120A I2PAK-3 |
20,088 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 4.5mOhm @ 100A, 10V | 4V @ 250µA | 74nC @ 10V | ±20V | 5270pF @ 50V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
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|
STMicroelectronics |
MOSFET N-CH 100V 41A TO-220FP |
18,660 |
|
STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 100V | 41A (Tc) | 10V | 10.5mOhm @ 60A, 10V | 4V @ 250µA | 233nC @ 10V | ±20V | 5200pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
|
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|
STMicroelectronics |
MOSFET N-CH 55V 200A POWERSO-10 |
22,860 |
|
STripFET™ | N-Channel | MOSFET (Metal Oxide) | 55V | 200A (Tc) | 10V | 2.5mOhm @ 75A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 6800pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 10-PowerSO | PowerSO-10 Exposed Bottom Pad |
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|
Rohm Semiconductor |
R6018JNX IS A POWER MOSFET WITH |
19,680 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 15V | 286mOhm @ 9A, 15V | 7V @ 4.2mA | 42nC @ 15V | ±30V | 1300pF @ 100V | - | 72W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
|
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|
ON Semiconductor |
MOSFET N-CH 600V 20A TO-3PN |
9,024 |
|
SuperFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 190mOhm @ 10A, 10V | 5V @ 250µA | 98nC @ 10V | ±30V | 3080pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
|
|
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ON Semiconductor |
MOSFET N-CH 800V 12.6A TO-3P |
8,328 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 800V | 12.6A (Tc) | 10V | 750mOhm @ 6.3A, 10V | 5V @ 250µA | 88nC @ 10V | ±30V | 3500pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
|
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Infineon Technologies |
MOSFET N-CH TO220-3 |
14,148 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 2.8mOhm @ 100A, 10V | 4V @ 223µA | 167nC @ 10V | ±20V | 11550pF @ 25V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 40V TO-220 |
8,388 |
|
DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 1.7mOhm @ 60A, 10V | 4.5V @ 250µA | 377nC @ 10V | ±20V | 20000pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 21A TO-247AC |
7,092 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 176mOhm @ 11A, 10V | 4V @ 250µA | 84nC @ 10V | ±30V | 2030pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
|
|
|
STMicroelectronics |
MOSFET N-CH 1050V 3A TO-220FP |
20,544 |
|
MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 1050V | 3A (Tc) | 10V | 3.5Ohm @ 1.5A, 10V | 5V @ 100µA | 12.5nC @ 10V | ±30V | 210pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
|
|
|
STMicroelectronics |
MOSFET N CH 650V 15A I2PAK |
17,736 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 220mOhm @ 7.5A, 10V | 5V @ 250µA | 31nC @ 10V | ±25V | 1240pF @ 100V | - | 110W (Tc) | 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
STMicroelectronics |
MOSFET N-CH 250V 28A TO220 |
16,968 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 250V | 28A (Tc) | 10V | 65mOhm @ 14A, 10V | 5V @ 100µA | 47nC @ 10V | ±25V | 1770pF @ 50V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
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Vishay Siliconix |
MOSFET N-CH 500V 16A TO-247AC |
8,916 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 380mOhm @ 8A, 10V | 5V @ 250µA | 68nC @ 10V | ±30V | 1900pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
|
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STMicroelectronics |
MOSFET N-CH 250V 45A TO-220 |
33,342 |
|
STripFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 45A (Tc) | 10V | 69mOhm @ 22A, 10V | 4V @ 250µA | 68.2nC @ 10V | ±20V | 2670pF @ 25V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 650V 22A TO-220AB |
17,928 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 22A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 110nC @ 10V | ±30V | 2415pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Infineon Technologies |
HIGH POWER_NEW |
7,908 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 125mOhm @ 7.8A, 10V | 4.5V @ 390µA | 36nC @ 10V | ±20V | 1503pF @ 400V | - | 92W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 650V 21A TO-220AB |
8,028 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 106nC @ 10V | ±20V | 2322pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
ON Semiconductor |
MOSFET N-CH 75V 120A TO-3P |
8,244 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 3.2mOhm @ 75A, 10V | 4.5V @ 250µA | 220nC @ 10V | ±20V | 15160pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
|
|
|
EPC |
TRANS GAN 200V 8MOHM DIE |
27,228 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 200V | 48A (Ta) | 5V | 8mOhm @ 20A, 5V | 2.5V @ 7mA | 11nC @ 5V | +6V, -4V | 1140pF @ 100V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
|
STMicroelectronics |
MOSFET N-CH 40V 120A I2PAK |
21,660 |
|
Automotive, AEC-Q101, STripFET™ III | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 10V | 2.6mOhm @ 80A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 7400pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
STMicroelectronics |
MOSFET N-CH 60V 80A I2PAKFP |
8,736 |
|
DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 3mOhm @ 60A, 10V | 4V @ 250µA | 183nC @ 10V | ±20V | 11400pF @ 25V | - | 41.7W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
|
|
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Vishay Siliconix |
MOSFET N-CH 500V 17A TO-220AB |
22,656 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 17A (Tc) | 10V | 290mOhm @ 10A, 10V | 5V @ 250µA | 120nC @ 10V | ±30V | 2830pF @ 25V | - | 220W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |