晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 191/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Rohm Semiconductor |
MOSFET P-CH 30V 2A TUMT6 |
52,668 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4V, 10V | 120mOhm @ 2A, 10V | - | 3.9nC @ 5V | ±20V | 350pF @ 10V | - | 1W (Ta) | - | Surface Mount | TUMT6 | 6-SMD, Flat Leads |
|
|
|
Micro Commercial Co |
N-CHANNEL MOSFET, SOP-8 PACKAGE |
27,930 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 8.5A (Ta) | 10V | 26mOhm @ 6A, 4.5V | 3V @ 250µA | 23nC @ 10V | ±20V | 1250pF @ 15V | - | 1.4W (Ta) | -55°C ~ 150°C (TA) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 2A ES6 |
35,094 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.8V, 4V | 130mOhm @ 1A, 4V | 1V @ 1mA | - | ±8V | 335pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | ES6 (1.6x1.6) | SOT-563, SOT-666 |
|
|
|
Vishay Siliconix |
MOSFET N-CHANNEL 30V 11.9A 8SO |
38,904 |
|
SkyFET®, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11.9A (Tc) | 4.5V, 10V | 16mOhm @ 10A, 10V | 2.3V @ 1mA | 17.5nC @ 10V | ±20V | 521pF @ 15V | - | 4.1W (Tc) | -55°C ~ 150°C (TA) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Alpha & Omega Semiconductor |
MOSFET P-CH 30V 10.5A 8SOIC |
115,806 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 10.5A (Ta) | 5V, 20V | 14mOhm @ 11A, 20V | 3V @ 250µA | 24nC @ 10V | ±25V | 1400pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
|
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|
Vishay Siliconix |
MOSFET N-CH 60V 240MA SOT-23 |
1,087,758 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 240mA (Ta) | 4.5V, 10V | 3Ohm @ 250mA, 10V | 2.5V @ 250µA | 0.6nC @ 4.5V | ±20V | 21pF @ 5V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
|
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|
Diodes Incorporated |
MOSFET P-CH 20V U-WLB1515-9 |
4,086 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | 1.8V, 4.5V | 33mOhm @ 2A, 4.5V | 1.1V @ 250µA | 7nC @ 4.5V | -6V | 500pF @ 10V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-WLB1515-9 | 9-UFBGA, WLBGA |
|
|
|
Diodes Incorporated |
MOSFET N-CH 30V 6.4A 8SO |
21,312 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 6.4A (Ta) | 4.5V, 10V | 24mOhm @ 7A, 10V | 3V @ 250µA | 12.9nC @ 10V | ±20V | 608pF @ 15V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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|
Vishay Siliconix |
MOSFET P-CH 20V MICROFOOT |
24,072 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | - | 1.5V, 4.5V | 100mOhm @ 1.5A, 4.5V | 1V @ 250µA | 24nC @ 8V | ±8V | 610pF @ 10V | - | 780mW (Ta), 1.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 4-Microfoot | 4-XFBGA, CSPBGA |
|
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|
Infineon Technologies |
MOSFET N-CH 20V 6.5A MICRO8 |
31,632 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 6.5A (Ta) | 2.5V, 4.5V | 30mOhm @ 6.5A, 4.5V | 1.2V @ 250µA | 22nC @ 5V | ±12V | 1310pF @ 15V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
|
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|
Nexperia |
MOSFET N-CH 100V 3.5A SOT223 |
34,332 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 3.5A (Tc) | 10V | 250mOhm @ 1.75A, 10V | 4V @ 1mA | 7.4nC @ 10V | ±20V | 300pF @ 25V | - | 6.9W (Tc) | -65°C ~ 150°C (TJ) | Surface Mount | SC-73 | TO-261-4, TO-261AA |
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|
Diodes Incorporated |
MOSFET N-CH 200V 0.1A TO92-3 |
2,934 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 100mA (Ta) | 10V | 25Ohm @ 100mA, 10V | 3V @ 1mA | - | ±20V | 45pF @ 25V | - | 625mW (Ta) | - | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 0.1A VESM |
6,822 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | - | 8Ohm @ 50mA, 4V | - | - | - | 12.2pF @ 3V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | VESM | SOT-723 |
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Diodes Incorporated |
2N7002 FAMILY SOT23 |
7,776 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 170mA (Ta) | 5V, 10V | 5Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.233nC @ 10V | ±20V | 50pF @ 25V | - | 370mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Panasonic Electronic Components |
MOSFET P-CH 12V 1.2A MINI-5P |
28,056 |
|
- | P-Channel | MOSFET (Metal Oxide) | 12V | 1.2A (Ta) | 4V | 450mOhm @ 800mA, 4V | 1.3V @ 1mA | - | ±15V | - | Schottky Diode (Isolated) | 600mW (Ta) | 125°C (TJ) | Surface Mount | Mini5-G1 | SC-74A, SOT-753 |
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Rohm Semiconductor |
MOSFET P-CH 45V 700MA TUMT5 |
22,884 |
|
- | P-Channel | MOSFET (Metal Oxide) | 45V | 700mA (Ta) | 4V, 10V | 800mOhm @ 700mA, 10V | 2.5V @ 1mA | 1.7nC @ 5V | ±20V | 120pF @ 10V | Schottky Diode (Isolated) | 1W (Ta) | 150°C (TJ) | Surface Mount | TUMT5 | 6-SMD (5 Leads), Flat Lead |
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|
Alpha & Omega Semiconductor |
MOSFET N CH 30V 18A 8SOIC |
29,172 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Tc) | 4.5V, 10V | 6.5mOhm @ 18A, 10V | 2.5V @ 250µA | 36nC @ 10V | ±20V | 1900pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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|
Toshiba Semiconductor and Storage |
X34 SMALL LOW ON RESISTANCE PCH |
3,258 |
|
U-MOSVII | P-Channel | MOSFET (Metal Oxide) | 20V | 250mA (Ta) | 1.2V, 4.5V | 1.4Ohm @ 150mA, 4.5V | 1V @ 100µA | - | ±10V | 42pF @ 10V | - | 150mW (Ta) | 150°C | Surface Mount | VESM | SOT-723 |
|
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|
Toshiba Semiconductor and Storage |
MOSFET N-CHANNEL 20V 250MA SSM |
5,400 |
|
U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 20V | 250mA (Ta) | 1.2V, 4.5V | 1.1Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | ±10V | 36pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | SSM | SC-75, SOT-416 |
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Vishay Siliconix |
MOSFET P-CHANNEL 30V 4.6A 8SOIC |
18,660 |
|
LITTLE FOOT® | P-Channel | MOSFET (Metal Oxide) | 30V | 4.6A (Tc) | 4.5V, 10V | 68mOhm @ 3.6A, 10V | 2.5V @ 250µA | 14nC @ 10V | ±20V | 350pF @ 15V | Schottky Diode (Isolated) | 2.75W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Nexperia |
MOSFET N-CH 60V MLFPAK |
14,262 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 35.8A (Tc) | 10V | 19mOhm @ 10A, 10V | 4V @ 1mA | 17.3nC @ 10V | ±20V | 1055pF @ 25V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 |
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Vishay Siliconix |
MOSFET N-CH 40V 30A SC70-6 |
24,342 |
|
TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 40V | 30A (Tc) | 4.5V, 10V | 12.5mOhm @ 5A, 10V | 2.4V @ 250µA | 12nC @ 4.5V | +20V, -16V | 1200pF @ 20V | - | 19.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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|
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Diodes Incorporated |
MOSFETN-CHAN 60V SOT23 |
7,920 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 210mA (Ta) | 5V, 10V | 5Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.821nC @ 10V | ±40V | 22pF @ 25V | - | 570mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Nexperia |
MOSFET N-CH 30V 50A DPAK |
99,354 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 10V | 9.8mOhm @ 12A, 10V | 2.8V @ 1mA | 30.5nC @ 10V | ±16V | 1760pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Toshiba Semiconductor and Storage |
X34 SMALL LOW ON RESISTANCE PCH |
4,194 |
|
U-MOSVII | P-Channel | MOSFET (Metal Oxide) | 20V | 250mA (Ta) | 1.2V, 4.5V | 1.4Ohm @ 150mA, 4.5V | 1V @ 100µA | - | ±10V | 42pF @ 10V | - | 150mW (Ta) | 150°C | Surface Mount | SSM | SC-75, SOT-416 |
|
|
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Vishay Siliconix |
MOSFET P-CH 30V 50A 1212-8 |
25,086 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 11mOhm @ 14A, 10V | 2.8V @ 250µA | 68nC @ 10V | ±20V | 2135pF @ 15V | - | 3.8W (Ta), 52.1W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S (3.3x3.3) | PowerPAK® 1212-8S |
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Rohm Semiconductor |
MOSFET P-CH 30V 0.25A SST3 |
8,460 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 250mA (Ta) | 4V, 10V | 1.4Ohm @ 250mA, 10V | 2.5V @ 1mA | - | ±20V | 30pF @ 10V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount | SST3 | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Micro Commercial Co |
N-CHANNEL MOSFET, SOT-323 PACKAG |
6,246 |
|
- | N-Channel | MOSFET (Metal Oxide) | 50V | 220mA (Ta) | 10V | 3.5Ohm @ 220mA, 10V | 1.5V @ 1mA | - | ±20V | 27pF @ 25V | - | 300mW (Ta) | -55°C ~ 155°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
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Infineon Technologies |
MOSFET P-CH 30V 11A 8PQFN |
27,954 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 14.6mOhm @ 11A, 10V | 2.4V @ 25µA | 16nC @ 10V | ±25V | 1543pF @ 25V | - | 2.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3.3x3.3), Power33 | 8-PowerTDFN |
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Rohm Semiconductor |
MOSFET P-CH 20V 3A TUMT6 |
23,694 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 3A (Ta) | 2.5V, 4.5V | 70mOhm @ 3A, 4.5V | 2V @ 1mA | 8nC @ 4.5V | ±12V | 760pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | TUMT6 | 6-SMD, Flat Leads |