晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 189/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 600V 73A TO247AC |
9,684 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 73A (Tc) | 10V | 39mOhm @ 36A, 10V | 4V @ 250µA | 362nC @ 10V | ±30V | 7700pF @ 100V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 35A TO-247 |
12,732 |
|
Automotive, AEC-Q101, FDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 35A (Tc) | 10V | 88mOhm @ 17.5A, 10V | 5V @ 250µA | 120nC @ 10V | ±25V | 4200pF @ 50V | - | 255W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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ON Semiconductor |
SUPERFET3 650V TO247 PKG |
8,436 |
|
Automotive, AEC-Q101, SuperFET® III, FRFET® | N-Channel | MOSFET (Metal Oxide) | 650V | 75A (Tc) | 10V | 27.4mOhm @ 35A, 10V | 5V @ 3mA | 227nC @ 10V | ±30V | 7780pF @ 400V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Rohm Semiconductor |
AUTOMOTIVE GRADE N-CHANNEL SIC P |
12,780 |
|
Automotive, AEC-Q101 | N-Channel | SiCFET (Silicon Carbide) | 1200V | 17A (Tc) | 18V | 208mOhm @ 5A, 18V | 5.6V @ 2.5mA | 42nC @ 18V | +22V, -4V | 398pF @ 800V | - | 103W | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
|
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|
STMicroelectronics |
MOSFET N-CH TO-3PF/ISOWATT 218 |
9,084 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 46A (Tc) | 10V | 59mOhm @ 23A, 10V | 5V @ 250µA | 139nC @ 10V | ±25V | 6810pF @ 100V | - | 79W (Tc) | 150°C (TJ) | Through Hole | ISOWATT-218FX | ISOWATT218FX |
|
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|
ON Semiconductor |
MOSFET N CH 600V 76A TO247 |
7,944 |
|
Automotive, AEC-Q101, SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 76A (Tc) | 10V | 41mOhm @ 38A, 10V | 5V @ 250µA | 347nC @ 10V | ±20V | 10900pF @ 25V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
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|
Vishay Siliconix |
MOSFET E SERIES 600V TO247AC |
17,304 |
|
EF | N-Channel | MOSFET (Metal Oxide) | 600V | 80A (Tc) | 10V | 32mOhm @ 40A, 10V | 4V @ 250µA | 400nC @ 10V | ±30V | 6600pF @ 100V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
|
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|
ON Semiconductor |
MOSFET N-CH 600V 76A TO-3PN |
18,576 |
|
SupreMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 76A (Tc) | 10V | 36mOhm @ 38A, 10V | 4V @ 250µA | 285nC @ 10V | ±30V | 12385pF @ 100V | - | 543W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
|
|
|
STMicroelectronics |
MOSFET N-CH 650V 42A TO247 |
8,118 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 42A (Tc) | 10V | 63mOhm @ 21A, 10V | 5V @ 250µA | 98nC @ 10V | ±25V | 4200pF @ 100V | - | 250W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
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|
Rohm Semiconductor |
AUTOMOTIVE GRADE N-CHANNEL SIC P |
9,804 |
|
Automotive, AEC-Q101 | N-Channel | SiCFET (Silicon Carbide) | 650V | 30A (Tc) | 18V | 104mOhm @ 10A, 18V | 5.6V @ 5mA | 48nC @ 18V | +22V, -4V | 571pF @ 500V | - | 134W | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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|
|
Rohm Semiconductor |
MOSFET N-CHANNEL 600V 76A TO247 |
7,956 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 76A (Tc) | 10V | 55mOhm @ 38A, 10V | 5V @ 1mA | 115nC @ 10V | ±30V | 7000pF @ 25V | - | 740W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
SCT3105KL IS AN SIC (SILICON CAR |
6,948 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 24A (Tc) | 18V | 137mOhm @ 7.6A, 18V | 5.6V @ 3.81mA | 51nC @ 18V | +22V, -4V | 574pF @ 800V | - | 134W | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
|
|
|
STMicroelectronics |
MOSFET N-CH 650V 84A |
7,500 |
|
MDmesh™ M5 | N-Channel | MOSFET (Metal Oxide) | 650V | 84A (Tc) | 10V | 29mOhm @ 42A, 10V | 5V @ 250µA | 204nC @ 10V | ±25V | 8825pF @ 100V | - | 450W (Tc) | 150°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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ON Semiconductor |
SIC MOS TO247 80MW 1200V |
9,084 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 44A (Tc) | 20V | 110mOhm @ 20A, 20V | 4.3V @ 5mA | 56nC @ 20V | +25V, -15V | 1670pF @ 800V | - | 348W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
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STMicroelectronics |
MOSFET N CH 500V 68A TO-247 |
12,576 |
|
MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 500V | 68A (Tc) | 10V | 43mOhm @ 34A, 10V | 4V @ 250µA | 178nC @ 10V | ±25V | 5790pF @ 100V | - | 446W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 51A TO-247 |
9,420 |
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FDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 51A (Tc) | 10V | 60mOhm @ 25.5A, 10V | 5V @ 250µA | 190nC @ 10V | ±25V | 5800pF @ 50V | - | 350W (Tc) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
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ON Semiconductor |
MOSFET N-CH 600V 47A TO-247 |
8,976 |
|
Automotive, AEC-Q101, SuperFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 75mOhm @ 47A, 10V | 5V @ 250µA | 250nC @ 10V | ±30V | 8000pF @ 25V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
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Rohm Semiconductor |
AUTOMOTIVE GRADE N-CHANNEL SIC P |
10,908 |
|
Automotive, AEC-Q101 | N-Channel | SiCFET (Silicon Carbide) | 1200V | 24A (Tc) | 18V | 137mOhm @ 7.6A, 18V | 5.6V @ 3.81mA | 51nC @ 18V | +22V, -4V | 574pF @ 800V | - | 134W | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
|
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Rohm Semiconductor |
AUTOMOTIVE GRADE N-CHANNEL SIC P |
14,352 |
|
Automotive, AEC-Q101 | N-Channel | SiCFET (Silicon Carbide) | 650V | 39A (Tc) | 18V | 78mOhm @ 13A, 18V | 5.6V @ 6.67mA | 58nC @ 18V | +22V, -4V | 852pF @ 500V | - | 165W | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
|
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Infineon Technologies |
MOSFET N-CH 650V TO247-4 |
6,444 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 75A (Tc) | 10V | 19mOhm @ 58.3A, 10V | 4V @ 2.92mA | 215nC @ 10V | ±20V | 9900pF @ 400V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
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STMicroelectronics |
MOSFET N-CH 600V 60A MAX247 |
12,348 |
|
MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 600V | 60A (Tc) | 10V | 55mOhm @ 30A, 10V | 5V @ 250µA | 266nC @ 10V | ±30V | 7300pF @ 25V | - | 560W (Tc) | 150°C (TJ) | Through Hole | MAX247™ | TO-247-3 |
|
|
|
Rohm Semiconductor |
AUTOMOTIVE GRADE N-CHANNEL SIC P |
11,124 |
|
Automotive, AEC-Q101 | N-Channel | SiCFET (Silicon Carbide) | 1200V | 31A (Tc) | 18V | 104mOhm @ 10A, 18V | 5.6V @ 5mA | 60nC @ 18V | +22V, -4V | 785pF @ 800V | - | 165W | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
|
|
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STMicroelectronics |
MOSFET N CH 600V 98A MAX247 |
8,472 |
|
MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 98A (Tc) | 10V | 29mOhm @ 49A, 10V | 4V @ 250µA | 330nC @ 10V | 25V | 9600pF @ 50V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | MAX247™ | TO-247-3 |
|
|
|
STMicroelectronics |
MOSFET N-CH 650V 69A TO247 |
8,940 |
|
Automotive, AEC-Q101, MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 69A (Tc) | 10V | 32mOhm @ 34.5A, 10V | 5V @ 250µA | 203nC @ 10V | ±25V | 9000pF @ 100V | - | 450W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
|
|
STMicroelectronics |
MOSFET N-CH 1200V 65A HIP247 |
8,640 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 65A (Tc) | 20V | 69mOhm @ 40A, 20V | 3V @ 1mA | 122nC @ 20V | +25V, -10V | 1900pF @ 400V | - | 318W (Tc) | -55°C ~ 200°C (TJ) | Through Hole | HiP247™ | TO-247-3 |
|
|
|
Rohm Semiconductor |
AUTOMOTIVE GRADE N-CHANNEL SIC P |
8,160 |
|
Automotive, AEC-Q101 | N-Channel | SiCFET (Silicon Carbide) | 1200V | 55A (Ta) | 18V | 52mOhm @ 20A, 18V | 5.6V @ 10mA | 107nC @ 18V | +22V, -4V | 1337pF @ 800V | - | 262W | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
|
|
|
Rohm Semiconductor |
AUTOMOTIVE GRADE N-CHANNEL SIC P |
18,684 |
|
Automotive, AEC-Q101 | N-Channel | SiCFET (Silicon Carbide) | 650V | 93A (Tc) | 18V | 28.6mOhm @ 36A, 18V | 5.6V @ 18.2mA | 133nC @ 18V | +22V, -4V | 2208pF @ 500V | - | 339W | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
|
|
|
Rohm Semiconductor |
AUTOMOTIVE GRADE N-CHANNEL SIC P |
22,080 |
|
Automotive, AEC-Q101 | N-Channel | SiCFET (Silicon Carbide) | 1200V | 72A (Tc) | 18V | 39mOhm @ 27A, 18V | 5.6V @ 13.3mA | 131nC @ 18V | +22V, -4V | 2222pF @ 800V | - | 339W | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
|
|
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Vishay Siliconix |
MOSFET N-CH 60V 300MA SOT-23 |
4,638,744 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 4.5V, 10V | 2Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.6nC @ 4.5V | ±20V | 30pF @ 25V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
|
|
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Diodes Incorporated |
MOSFET N-CH 20V 5.47A SOT23 |
1,873,632 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 5.47A (Ta) | 1.8V, 10V | 29mOhm @ 6A, 10V | 1.2V @ 250µA | 5.4nC @ 4.5V | ±12V | 434.7pF @ 10V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |