晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 252/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 150V 85A D2PAK |
8,280 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 85A (Tc) | 10V | 19mOhm @ 30A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 4750pF @ 25V | - | 3.75W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
AUTOMOTIVE-GRADE N-CHANNEL 400 V |
2,484 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 160A D2PAK-7 |
7,992 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 160A (Tc) | 10V | 2.6mOhm @ 140A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 7820pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 25A TO220-3 |
10,380 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 25A (Tc) | 10V | 125mOhm @ 16A, 10V | 3.5V @ 1.1mA | 70nC @ 10V | ±20V | 2500pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
|
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|
Infineon Technologies |
MOSFET N-CH 650V 25A TO-262 |
11,328 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 25A (Tc) | 10V | 125mOhm @ 16A, 10V | 3.5V @ 1.1mA | 70nC @ 10V | ±20V | 2500pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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|
IXYS |
MOSFET N-CH 1.2KV 3A TO263 |
8,748 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1200V | 3A (Tc) | 10V | 4.5Ohm @ 500mA, 10V | 5V @ 250µA | 42nC @ 10V | ±20V | 1100pF @ 25V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
SUPERFET3 650V D2PAK PKG |
6,408 |
|
Automotive, AEC-Q101, SuperFET® III, FRFET® | N-Channel | MOSFET (Metal Oxide) | 650V | 44A (Tc) | 10V | 72mOhm @ 24A, 10V | 4.5V @ 1mA | 82nC @ 10V | ±30V | 330pF @ 400V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK-3 (TO-263-3) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|
STMicroelectronics |
MOSFET N-CH 550V 2.4A POWERFLAT |
4,698 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 550V | 2.4A (Ta), 13A (Tc) | 10V | 270mOhm @ 6A, 10V | 5V @ 250µA | 31nC @ 10V | ±25V | 1352pF @ 100V | - | 3W (Ta), 90W (Tc) | 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
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ON Semiconductor |
MOSFET N-CH 250V 50A D2PAK |
4,626 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 250V | 50A (Tc) | 10V | 42.5mOhm @ 25A, 10V | 5V @ 250µA | 101nC @ 10V | ±30V | 7280pF @ 25V | - | 260W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
SUPERFET3 650V D2PAK PKG |
3,384 |
|
* | N-Channel | MOSFET (Metal Oxide) | 650V | 40A (Tc) | 10V | 82mOhm @ 20A, 10V | 5V @ 4mA | 81nC @ 10V | ±30V | 3410pF @ 400V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK-3 (TO-263-3) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 55V 180A H2PAK-6 |
5,256 |
|
STripFET™ III | N-Channel | MOSFET (Metal Oxide) | 55V | 180A (Tc) | 10V | 2.6mOhm @ 60A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 6800pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H²PAK | TO-263-7, D²Pak (6 Leads + Tab) |
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Rohm Semiconductor |
MOSFET N-CH 600V 15A TO-220FM |
16,860 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Ta) | 10V | 350mOhm @ 7.5A, 10V | 5V @ 1mA | 42nC @ 10V | ±30V | 1660pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 60V 120A D2PAK |
2,376 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 3.6mOhm @ 60A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 6800pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 150V 169A H-PSOF8 |
5,472 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 169A (Tc) | 10V | 6.3mOhm @ 80A, 10V | 4V @ 250µA | 90nC @ 10V | ±20V | 5805pF @ 75V | - | 500W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
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Rohm Semiconductor |
MOSFET N-CH 100V 65A LPTS |
2,772 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 65A (Ta) | 4V, 10V | 9.1mOhm @ 32.5A, 10V | 2.5V @ 1mA | 260nC @ 10V | ±20V | 10780pF @ 25V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 1000V 4A TO-263 |
5,508 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 4A (Tc) | 10V | 3Ohm @ 2A, 10V | 4.5V @ 1.5mA | 39nC @ 10V | ±20V | 1050pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 33A TO263 |
7,470 |
|
E | N-Channel | MOSFET (Metal Oxide) | 600V | 33A (Tc) | 10V | 99mOhm @ 16.5A, 10V | 4V @ 250µA | 150nC @ 10V | ±30V | 3508pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 29A TO247AC |
11,100 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 125mOhm @ 15A, 10V | 4V @ 250µA | 130nC @ 10V | ±30V | 2600pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
|
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Vishay Siliconix |
MOSFET N-CH 600V 29A TO-247AD |
6,960 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 125mOhm @ 15A, 10V | 4V @ 250µA | 130nC @ 10V | ±20V | 2600pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-3P-3 Full Pack |
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Rohm Semiconductor |
R6020PNJFRA IS THE HIGH RELIABIL |
4,806 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 250mOhm @ 10A, 10V | 4.5V @ 1mA | 65nC @ 10V | ±30V | 2040pF @ 25V | - | 304W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 15A TO-3PN |
15,540 |
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DTMOSII | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Ta) | 10V | 300mOhm @ 7.5A, 10V | 5V @ 1mA | 17nC @ 10V | ±30V | 950pF @ 10V | - | 170W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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ON Semiconductor |
PTNG 120V N-FET PQFN56 |
3,096 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 120V | 18.5A (Ta), 114A (Tc) | 6V, 10V | 4mOhm @ 67A, 10V | 4V @ 370A | 82nC @ 10V | ±20V | 6460pF @ 60V | - | 2.7W (Ta), 106W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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ON Semiconductor |
TRENCH 8 80V NFET |
2,520 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 28A (Ta), 203A (Tc) | 6V, 10V | 2.1mOhm @ 50A, 10V | 4V @ 330µA | 85nC @ 10V | ±20V | 5530pF @ 40V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 100V 300A 8-HPSOF |
7,416 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 300A (Tc) | 10V | 2mOhm @ 80A, 10V | 4.5V @ 250µA | 133nC @ 10V | ±20V | 9760pF @ 50V | - | 429W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
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STMicroelectronics |
MOSFET N-CH 650V 15.5A D2PAK |
2,250 |
|
MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 650V | 15.5A (Tc) | 10V | 270mOhm @ 7.75A, 10V | 4V @ 250µA | 55nC @ 10V | ±25V | 1900pF @ 50V | - | 150W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
AUTOMOTIVE-GRADE N-CHANNEL 500 V |
6,876 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 500V 21A D2PAK |
5,958 |
|
MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 500V | 21A (Tc) | 10V | 158mOhm @ 10.5A, 10V | 4V @ 250µA | 50nC @ 10V | ±25V | 1735pF @ 25V | - | 150W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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ON Semiconductor |
MOSFET N-CH 100V 19A SO8FL |
3,636 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 19A (Ta), 132A (Tc) | 6V, 10V | 4.8mOhm @ 20A, 10V | 4V @ 250µA | 58nC @ 10V | ±20V | 4200pF @ 50V | - | 3.4W (Ta), 165W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 600V 22A TO247-4 |
6,852 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 99mOhm @ 9.7A, 10V | 4V @ 490µA | 42nC @ 10V | ±20V | 1819pF @ 400V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
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ON Semiconductor |
MOSFET N-CH 30V 80A TO220 |
19,188 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Ta) | 4.5V, 10V | 3.5mOhm @ 80A, 10V | 2V @ 250µA | 170nC @ 5V | ±20V | 10500pF @ 15V | - | 187W (Tc) | -65°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |