晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 253/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STMicroelectronics |
MOSFET N-CH 60V 250A H2PAK |
3,454 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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|
IXYS |
MOSFET N-CH 1200V 6A TO-220AB |
9,036 |
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HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 6A (Tc) | 10V | 2.4Ohm @ 500mA, 10V | 5V @ 1mA | 92nC @ 10V | ±30V | 2830pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
N-CHANNEL 900 V, 0.24 OHM TYP., |
2,916 |
|
MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 900V | 20A (Tc) | 10V | 250mOhm @ 10A, 10V | 5V @ 100µA | 40nC @ 10V | ±30V | 1500pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 600V 20A D2PAK |
8,766 |
|
MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 165mOhm @ 10A, 10V | 4V @ 250µA | 60nC @ 10V | ±30V | 1800pF @ 50V | - | 140W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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STMicroelectronics |
N-CHANNEL 600 V 0.094 OHM TYP. 2 |
2,502 |
|
MDmesh™ DM6 | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 110mOhm @ 12.5A, 10V | 4.75V @ 250µA | - | ±25V | - | - | 160W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
|
|
|
STMicroelectronics |
MOSFET N-CH 650V 17A POWERFLAT88 |
2,100 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 17A (Tc) | 10V | 179mOhm @ 8.5A, 10V | 5V @ 250µA | 50nC @ 10V | ±25V | 1950pF @ 100V | - | 3W (Ta), 125W (Tc) | 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
|
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STMicroelectronics |
MOSFET N-CH 650V 15A POWERFLAT |
4,842 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 2.8A (Ta), 15A (Tc) | 10V | 162mOhm @ 11A, 10V | 5V @ 250µA | 45nC @ 10V | ±25V | 1865pF @ 100V | - | 2.8W (Ta), 125W (Tc) | 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
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|
STMicroelectronics |
MOSFET N-CH 60V 180A H2PAK |
6,138 |
|
DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 60V | 180A (Tc) | 10V | 2.4mOhm @ 60A, 10V | 4V @ 250µA | 183nC @ 10V | ±20V | 11800pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|
ON Semiconductor |
MOSFET N-CH 100V D2PAK |
3,834 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 3.5mOhm @ 75A, 10V | 4V @ 250µA | 116nC @ 10V | ±20V | 7295pF @ 25V | - | 2.4W (Ta), 227W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|
STMicroelectronics |
N-CHANNEL 600 V, 0.85 OHM TYP., |
5,382 |
|
MDmesh™ M6 | N-Channel | MOSFET (Metal Oxide) | 600V | 31A (Tc) | 10V | 80mOhm @ 15.5A, 10V | 4.75V @ 250µA | 57nC @ 10V | ±25V | - | - | 189W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
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|
Infineon Technologies |
MOSFET N-CH 650V 31A TO-220 |
8,148 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 31A (Tc) | 10V | 99mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | ±20V | 2800pF @ 100V | - | 255W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 23A D2PAK |
6,822 |
|
FDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 23A (Tc) | 10V | 150mOhm @ 11.5A, 10V | 5V @ 250µA | 62.5nC @ 10V | ±25V | 2090pF @ 100V | - | 190W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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STMicroelectronics |
MOSFET N CH 650V 35A D2PAK |
4,824 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 35A (Tc) | 10V | 78mOhm @ 19.5A, 10V | 5V @ 250µA | 91nC @ 10V | ±25V | 3375pF @ 100V | - | 210W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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STMicroelectronics |
MOSFET N-CH 600V 21A D2PAK |
2,898 |
|
FDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 175mOhm @ 10.5A, 10V | 5V @ 250µA | 54.6nC @ 10V | ±25V | 1817pF @ 100V | - | 190W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 40V 180A H2PAK-2 |
3,006 |
|
DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 40V | 180A (Tc) | 10V | 1.25mOhm @ 60A, 10V | 4.5V @ 250µA | 340nC @ 10V | ±20V | 17930pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 600V 29A D2PAK |
4,608 |
|
MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 105mOhm @ 14.5A, 10V | 4V @ 250µA | 84nC @ 10V | ±25V | 2722pF @ 100V | - | 250W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CHAN 600V POWERPAK 8X8 |
6,048 |
|
E | N-Channel | MOSFET (Metal Oxide) | 600V | 34A (Tc) | 10V | 68mOhm @ 15A, 10V | 5V @ 250µA | 80nC @ 10V | ±30V | 2650pF @ 100V | - | 202W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
|
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|
STMicroelectronics |
MOSFET N-CH 40V 180A H2PAK-2 |
8,568 |
|
Automotive, AEC-Q101, DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 40V | 180A (Tc) | 10V | 1.15mOhm @ 60A, 10V | 4.5V @ 250µA | 404nC @ 10V | ±20V | 20500pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
STMicroelectronics |
MOSFET N-CH 650V 24A D2PAK |
2,718 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 119mOhm @ 12A, 10V | 5V @ 250µA | 72nC @ 10V | ±25V | 3320pF @ 100V | - | 150W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
STMicroelectronics |
MOSFET N-CH 550V 22.5A 4PWRFLAT |
5,040 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 550V | 22.5A (Tc) | 10V | 90mOhm @ 16.5A, 10V | 5V @ 250µA | 62nC @ 10V | ±25V | 2670pF @ 100V | - | 2.8W (Ta), 150W (Tc) | 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
|
|
|
STMicroelectronics |
MOSFET N-CH 650V 30A D2PAK |
6,696 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 30A (Tc) | 10V | 95mOhm @ 15A, 10V | 5V @ 250µA | 71nC @ 10V | ±25V | 3000pF @ 100V | - | 190W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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STMicroelectronics |
MOSFET N-CH 650V 22.5A 4PWRFLAT |
7,758 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 3.8A (Ta), 22.5A (Tc) | 10V | 86mOhm @ 14.5A, 10V | 5V @ 250µA | 82nC @ 10V | ±25V | 3470pF @ 100V | - | 2.8W (Ta), 160W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFLAT™ (8x8) | 8-PowerVDFN |
|
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|
STMicroelectronics |
MOSFET N-CH 800V 19.5A D2PAK |
2,628 |
|
SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 800V | 19.5A (Tc) | 10V | 260mOhm @ 19.5A, 10V | 5V @ 100µA | 40nC @ 10V | ±30V | 1600pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
IXYS |
MOSFET N-CH 75V 80A TO-263 |
9,312 |
|
Linear L2™ | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 24mOhm @ 40A, 10V | 4.5V @ 250µA | 103nC @ 10V | ±20V | 3600pF @ 25V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Transphorm |
GANFET N-CH 650V 20A TO220 |
8,892 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 650V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14nC @ 8V | ±18V | 760pF @ 400V | - | 96W (Tc) | -55°C ~ 150°C | Through Hole | TO-220AB | TO-220-3 |
|
|
|
IXYS |
MOSFET N-CH 100V 75A TO-247 |
8,484 |
|
Linear L2™ | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 21mOhm @ 500mA, 10V | 4.5V @ 250µA | 215nC @ 10V | ±20V | 8100pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
|
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STMicroelectronics |
MOSFET N-CH 650V 4.3A 8POWERFLAT |
3,906 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 4.3A (Ta), 22.5A (Tc) | 10V | 69mOhm @ 20A, 10V | 5V @ 250µA | 110nC @ 10V | ±25V | 4200pF @ 100V | - | 2.8W (Ta), 189W (Tc) | 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
|
|
|
ON Semiconductor |
MOSFET N-CH 600V 34.9A TO3PN |
9,816 |
|
FRFET®, SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 34.9A (Tc) | 10V | 95mOhm @ 18A, 10V | 5V @ 250µA | 112nC @ 10V | ±30V | 4245pF @ 100V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Transphorm |
GANFET N-CH 650V 20A 3PQFN |
6,960 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 650V | 20A (Tc) | 10V | 130mOhm @ 14A, 8V | 2.6V @ 300µA | 42nC @ 8V | ±18V | 760pF @ 400V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PQFN (8x8) | 3-PowerDFN |
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Transphorm |
GANFET N-CH 600V 17A PQFN |
7,542 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 600V | 17A (Tc) | 10V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PQFN (8x8) | 3-PowerDFN |