晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 258/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 20V 8.7A 8-SOIC |
5,742 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 8.7A (Ta) | 2.7V, 4.5V | 22mOhm @ 4.1A, 4.5V | 700mV @ 250µA | 48nC @ 4.5V | ±12V | 1600pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 950V 2A SOT223 |
2,952 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 950V | 2A (Tc) | 10V | 3.7Ohm @ 800mA, 10V | 3.5V @ 40µA | 6nC @ 10V | ±20V | 196pF @ 400V | - | 6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
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Infineon Technologies |
MOSFET N-CH 30V 10.8A 8-SOIC |
7,920 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 10.8A (Ta) | 4.5V | 14mOhm @ 15A, 4.5V | 3V @ 250µA | 26nC @ 5V | ±20V | 1801pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 16A 8-SOIC |
6,498 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 6.6mOhm @ 16A, 10V | 2.4V @ 50µA | 92nC @ 10V | ±20V | 2820pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 6.7A 8-SOIC |
7,398 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 6.7A (Ta) | 2.7V, 4.5V | 40mOhm @ 3.2A, 4.5V | 700mV @ 250µA | 50nC @ 4.5V | ±12V | 1500pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 40A TSDSON |
4,986 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta), 40A (Tc) | 4.5V, 10V | 4mOhm @ 30A, 10V | 2V @ 250µA | 11nC @ 4.5V | ±20V | 1463pF @ 15V | Schottky Diode (Body) | 2.1W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 86A DPAK |
2,862 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 86A (Tc) | 4.5V, 10V | 6.5mOhm @ 15A, 10V | 2.25V @ 250µA | 26nC @ 4.5V | ±20V | 2330pF @ 15V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 9A 8-SOIC |
2,100 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 9A (Ta) | 4.5V, 10V | 17mOhm @ 9A, 10V | 3V @ 250µA | 23nC @ 4.5V | ±20V | 2000pF @ 20V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CHANNEL 600V 9A SOT223 |
8,370 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 360mOhm @ 2.7A, 10V | 4V @ 140µA | 13nC @ 10V | ±20V | 555pF @ 400V | - | 7W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
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Infineon Technologies |
MOSFET N-CH 100V 17A DPAK |
6,768 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 4V, 10V | 105mOhm @ 10A, 10V | 2V @ 250µA | 34nC @ 5V | ±16V | 800pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 31A DPAK |
5,472 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 31A (Tc) | 10V | 39mOhm @ 18A, 10V | 4V @ 250µA | 56nC @ 10V | ±20V | 1690pF @ 25V | - | 3W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 700V 12.5A SOT223 |
6,804 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 12.5A (Tc) | 10V | 360mOhm @ 3A, 10V | 3.5V @ 150µA | 16.4nC @ 10V | ±16V | 517pF @ 400V | - | 7.2W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
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Infineon Technologies |
MOSFET N-CH 25V 25A TDSON-8 |
3,312 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 25A (Ta), 100A (Tc) | 4.5V, 10V | 2.4mOhm @ 30A, 10V | 2V @ 250µA | 23nC @ 10V | ±20V | 1700pF @ 12V | - | 2.5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 40V 70A 8TDSON-34 |
4,950 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 70A (Tc) | 4.5V, 10V | 4.2mOhm @ 35A, 10V | 2V @ 17µA | 30nC @ 10V | ±16V | 1600pF @ 25V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-34 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 21A PQFN |
3,258 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta), 40A (Tc) | 2.5V, 10V | 3.5mOhm @ 20A, 4.5V | 1.1V @ 50µA | 62nC @ 4.5V | ±12V | 3170pF @ 25V | - | 2.7W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (3x3) | 8-VQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 55V 25A DPAK |
5,904 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 25A (Tc) | 5V, 10V | 37mOhm @ 15A, 10V | 3V @ 250µA | 20nC @ 5V | ±16V | 710pF @ 25V | - | 57W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N CH 500V 5A TO252 |
3,528 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 13V | 800mOhm @ 1.5A, 13V | 3.5V @ 130µA | 12.4nC @ 10V | ±20V | 280pF @ 100V | Super Junction | 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 75A TO252-3-313 |
7,974 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 5.9mOhm @ 75A, 10V | 4V @ 26µA | 32nC @ 10V | ±20V | 2550pF @ 25V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 60V 20A 8WDFN |
4,050 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 7.6A (Ta) | 4.5V, 10V | 24mOhm @ 10A, 10V | 2.5V @ 250µA | 16nC @ 10V | ±20V | 850pF @ 25V | - | 3.2W (Ta), 22W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Infineon Technologies |
MOSFET N-CH 25V 24A WDSON-2 |
4,086 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 24A (Ta), 75A (Tc) | 4.5V, 10V | 3mOhm @ 30A, 10V | 2V @ 250µA | 23nC @ 10V | ±20V | 1700pF @ 12V | - | 2.2W (Ta), 28W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET NCH 500V 14.1A TO252 |
2,070 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 14.1A (Tc) | 13V | 380mOhm @ 3.2A, 13V | 3.5V @ 260µA | 24.8nC @ 10V | ±20V | 584pF @ 100V | Super Junction | 98W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 200V 7A 8TSDSON |
6,642 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 7A (Tc) | 10V | 225mOhm @ 3.5A, 10V | 4V @ 13µA | 5.6nC @ 10V | ±20V | 430pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 200V 7A 8TDSON |
4,194 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 7A (Tc) | 10V | 225mOhm @ 3.5A, 10V | 4V @ 13µA | 5.6nC @ 10V | ±20V | 430pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 600V 9A TO252-3 |
8,172 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 360mOhm @ 2.7A, 10V | 4V @ 140µA | 13nC @ 10V | ±20V | 555pF @ 400V | - | 41W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 100A TDSON-8 |
3,436 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta), 100A (Tc) | 4.5V, 10V | 3mOhm @ 30A, 10V | 2V @ 250µA | 73nC @ 10V | ±20V | 5700pF @ 15V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 100A TDSON-8 |
7,920 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 23A (Ta), 100A (Tc) | 4.5V, 10V | 3mOhm @ 30A, 10V | 2.2V @ 250µA | 55nC @ 10V | ±20V | 4300pF @ 15V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 50A TO252-3 |
4,194 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 7.9mOhm @ 50A, 10V | 2.2V @ 34µA | 29nC @ 4.5V | ±20V | 4900pF @ 30V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 90A TO252-3 |
2,214 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 4mOhm @ 30A, 10V | 2.2V @ 250µA | 38nC @ 10V | ±20V | 3900pF @ 15V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
COOLMOS P7 800V SOT-223 |
3,420 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 4.5A (Tc) | 10V | 1.2Ohm @ 1.7A, 10V | 3.5V @ 80µA | 11nC @ 10V | ±20V | 300pF @ 500V | - | 6.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
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Infineon Technologies |
MOSFET N-CH 100V 5.4A 8-SOIC |
6,192 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 5.4A (Ta) | 10V | 39mOhm @ 3.2A, 10V | 4V @ 250µA | 56nC @ 10V | ±20V | 1720pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |