晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 259/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 40V 100A TDSON-8 |
6,750 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 23A (Ta), 100A (Tc) | 10V | 3mOhm @ 50A, 10V | 4V @ 49µA | 61nC @ 10V | ±20V | 4900pF @ 20V | - | 2.5W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 50A DPAK |
3,454 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 6.4mOhm @ 50A, 10V | 2V @ 85µA | 68nC @ 10V | ±20V | 2530pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 27A TO252-3 |
7,128 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 27A (Tc) | 10V | 33mOhm @ 27A, 10V | 4V @ 29µA | 24nC @ 10V | ±20V | 1570pF @ 50V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 21A TSDSON-8 |
2,214 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta), 40A (Tc) | 4.5V, 10V | 2.8mOhm @ 30A, 10V | 2V @ 250µA | 24nC @ 10V | ±20V | 1500pF @ 15V | - | 2.5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 30V 5.8A 8-SOIC |
5,166 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 5.8A (Ta) | 4.5V, 10V | 45mOhm @ 2.8A, 10V | 1V @ 250µA | 59nC @ 10V | ±20V | 1100pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 12V 11.5A 8-SOIC |
6,246 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 11.5A (Tc) | 1.8V, 4.5V | 14mOhm @ 11.5A, 4.5V | 900mV @ 250µA | 38nC @ 4.5V | ±8V | 3529pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 100V 4.2A DIRECTFET |
7,182 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 4.2A (Ta), 19A (Tc) | 10V | 62mOhm @ 5A, 10V | 5V @ 250µA | 13nC @ 10V | ±20V | 530pF @ 25V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SH | DirectFET™ Isometric SH |
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Infineon Technologies |
MOSFET N-CH 30V 100A 8TDSON |
2,394 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 23A (Ta), 100A (Tc) | 4.5V, 10V | 2.8mOhm @ 30A, 10V | 2V @ 10mA | 32nC @ 10V | ±20V | 1500pF @ 15V | - | 2.5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MV POWER MOS |
4,806 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 43A (Tc) | 6V, 10V | 18mOhm @ 33A, 10V | 3.5V @ 33µA | 25nC @ 10V | ±20V | 1800pF @ 50V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 4.4A TO252 |
5,904 |
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CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 600V | 4.4A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 130µA | 13nC @ 10V | ±20V | 280pF @ 100V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 90A TO252-3-313 |
5,634 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 4.5V, 10V | 3.8mOhm @ 90A, 10V | 2.2V @ 35µA | 60nC @ 10V | +20V, -16V | 4690pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 60V 26A SO8FL |
4,230 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 8A (Ta) | 4.5V, 10V | 24mOhm @ 10A, 10V | 2.5V @ 250µA | 17nC @ 10V | ±20V | 850pF @ 25V | - | 3.6W (Ta), 39W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 140A DPAK |
2,448 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 140A (Tc) | 4.5V, 10V | 4.5mOhm @ 15A, 10V | 2.3V @ 250µA | 50nC @ 4.5V | ±20V | 4010pF @ 15V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 800V 4.5A TO252-3 |
6,696 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 4.5A (Tc) | 10V | 1.2Ohm @ 1.7A, 10V | 3.5V @ 80µA | 11nC @ 10V | ±20V | 300pF @ 500V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 90A 8TDSON-34 |
3,960 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 7V, 10V | 3.6mOhm @ 45A, 10V | 3.4V @ 23µA | 32.6nC @ 10V | ±20V | 1950pF @ 25V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-34 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 40V 90A 8TDSON-34 |
4,230 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 4.5V, 10V | 3.3mOhm @ 45A, 10V | 2V @ 23µA | 40nC @ 10V | ±16V | 2145pF @ 25V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-34 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 30V 14.9A TDSON-8 |
8,964 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 14.9A (Ta), 78.6A (Tc) | 6V, 10V | 8.4mOhm @ 50A, 10V | 3.1V @ 105µA | 58nC @ 10V | ±25V | 4785pF @ 15V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V S308 |
7,704 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta), 40A (Tc) | 4.5V, 10V | 2mOhm @ 20A, 10V | 2.2V @ 250µA | 45nC @ 10V | ±20V | 2850pF @ 15V | - | 2.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 32A 5X6 PQFN |
8,208 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 32A (Ta), 100A (Tc) | 4.5V, 10V | 2.1mOhm @ 50A, 10V | 2.35V @ 100µA | 76nC @ 10V | ±20V | 4400pF @ 15V | - | 3.6W (Ta), 100W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 21A 8-SOIC |
7,164 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta) | 4.5V, 10V | 3.7mOhm @ 20A, 10V | 2.35V @ 100µA | 45nC @ 4.5V | ±20V | 4090pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 100V 17A D2PAK |
16,320 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 10V | 90mOhm @ 9A, 10V | 4V @ 250µA | 37nC @ 10V | ±20V | 920pF @ 25V | - | 3.8W (Ta), 70W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 106A 2WDSON |
8,244 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta), 106A (Tc) | 4.5V, 10V | 2.4mOhm @ 20A, 10V | 2.2V @ 250µA | 71nC @ 10V | ±20V | 5500pF @ 15V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 800V 2A 3TO252 |
8,586 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 2A (Tc) | 10V | 2.7Ohm @ 1.2A, 10V | 3.9V @ 120µA | 16nC @ 10V | ±20V | 290pF @ 100V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 35A 5X6 PQFN |
5,274 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Ta), 100A (Tc) | 4.5V, 10V | 1.85mOhm @ 50A, 10V | 2.35V @ 100µA | 77nC @ 10V | ±20V | 5114pF @ 15V | - | 3.6W (Ta), 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 14A DIRECTFET |
3,400 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta), 60A (Tc) | 4.5V, 10V | 7.3mOhm @ 14A, 10V | 2.4V @ 25µA | 17nC @ 4.5V | ±20V | 1430pF @ 15V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SQ | DirectFET™ Isometric SQ |
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Infineon Technologies |
MOSFET N-CH 500V 7.6A PG-TO252 |
5,940 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 7.6A (Tc) | 13V | 500mOhm @ 2.3A, 13V | 3.5V @ 200µA | 18.7nC @ 10V | ±20V | 433pF @ 100V | Super Junction | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 75V 56A D2PAK |
8,082 |
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- | N-Channel | MOSFET (Metal Oxide) | 75V | 56A (Tc) | 6V, 10V | 11.2mOhm @ 35A, 10V | 3.7V @ 100µA | 89nC @ 10V | ±20V | 3107pF @ 25V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 250V 5A TSDSON-8 |
3,600 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 5A (Tc) | 10V | 425mOhm @ 2.5A, 10V | 4V @ 13µA | 5.5nC @ 10V | ±20V | 430pF @ 100V | - | 33.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 21A 8-SOIC |
4,608 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta) | 4.5V, 10V | 3.6mOhm @ 20A, 10V | 2.35V @ 250µA | 60nC @ 4.5V | ±12V | 6240pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 15A 8-SOIC |
8,442 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta) | 2.8V, 10V | 7.5mOhm @ 15A, 10V | 2V @ 250µA | 56nC @ 5V | ±12V | 3480pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |