晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 263/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 100V 17A DPAK |
6,660 |
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Automotive, AEC-Q101, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 4V, 10V | 105mOhm @ 10A, 10V | 2V @ 250µA | 34nC @ 5V | ±16V | 800pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 200V 24A DPAK |
7,128 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 24A (Tc) | 10V | 78mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | ±20V | 1710pF @ 50V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 800V 8A TO252-3 |
7,776 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 600mOhm @ 3.4A, 10V | 3.5V @ 170µA | 20nC @ 10V | ±20V | 570pF @ 500V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 8THINPAK |
5,310 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 11.3A (Tc) | 10V | 360mOhm @ 4.5A, 10V | 4.5V @ 370µA | 22nC @ 10V | ±20V | 1010pF @ 100V | - | 89.3W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | 8-ThinPak (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 150V 5A PQFN |
8,964 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 5A (Ta), 27A (Tc) | 10V | 58mOhm @ 16A, 10V | 5V @ 100µA | 32nC @ 10V | ±20V | 1350pF @ 50V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-VQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 100V 71A TDSON-8 |
6,696 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 10.6A (Ta), 71A (Tc) | 4.5V, 10V | 12.3mOhm @ 50A, 10V | 2.4V @ 72µA | 68nC @ 10V | ±20V | 4900pF @ 50V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 58A TO263-3 |
23,592 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 58A (Tc) | 6V, 10V | 12.3mOhm @ 46A, 10V | 3.5V @ 46µA | 35nC @ 10V | ±20V | 2500pF @ 50V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 100V 15A TO252-3 |
5,130 |
|
SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 100V | 15A (Tc) | 4.5V, 10V | 200mOhm @ 11.3A, 10V | 2V @ 1.54mA | 62nC @ 10V | ±20V | 1490pF @ 25V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N CH 25V 16A S1 |
8,928 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 16A (Ta), 50A (Tc) | 4.5V, 10V | 5.2mOhm @ 16A, 10V | 2.1V @ 25µA | 11nC @ 4.5V | ±16V | 1038pF @ 13V | - | 2.1W (Ta), 20W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET S1 | DirectFET™ Isometric S1 |
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Infineon Technologies |
MOSFET N-CH 40V 90A TO252-3-313 |
7,434 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 2.4mOhm @ 90A, 10V | 4V @ 95µA | 118nC @ 10V | ±20V | 9430pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 950V 9A TO252 |
4,590 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 950V | 9A (Tc) | 10V | 750mOhm @ 4.5A, 10V | 3.5V @ 220µA | 23nC @ 10V | ±20V | 712pF @ 400V | - | 73W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 25V 41A 8TDSON |
7,704 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 41A (Ta), 100A (Tc) | 4.5V, 10V | 0.9mOhm @ 30A, 10V | 2V @ 250µA | 57nC @ 10V | ±16V | 3900pF @ 12V | - | 2.5W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 40V 100A 8TDSON |
3,996 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 1.5mOhm @ 50A, 10V | 2V @ 60µA | 95nC @ 10V | ±16V | 5340pF @ 25V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-34 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 35A TDSON-8 |
7,956 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Ta), 100A (Tc) | 4.5V, 10V | 1.3mOhm @ 30A, 10V | 2V @ 250µA | 52nC @ 10V | ±20V | 3300pF @ 15V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 9.3A PQFN56 |
7,542 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 9.3A (Ta), 46A (Tc) | 10V | 18mOhm @ 9.3A, 10V | 4.9V @ 100µA | 36nC @ 10V | ±20V | 1510pF @ 50V | - | 3.1W (Ta), 8.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 55V 5.2A SOT223 |
4,194 |
|
Automotive, AEC-Q101, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 5.2A (Ta) | 4V, 10V | 40mOhm @ 3.8A, 10V | 2V @ 250µA | 48nC @ 10V | ±16V | 870pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 600V 12A TO252-3 |
2,304 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 280mOhm @ 3.8A, 10V | 4V @ 190µA | 18nC @ 10V | ±20V | 761pF @ 400V | - | 53W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 25V 32A DIRECTFET-MX |
2,520 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 32A (Ta), 160A (Tc) | 4.5V, 10V | 1.8mOhm @ 32A, 10V | 2.35V @ 100µA | 53nC @ 4.5V | ±20V | 4280pF @ 13V | - | 2.8W (Ta), 75W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 40V 28A 8VQFN |
8,316 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 28A (Ta), 100A (Tc) | 10V | 2.6mOhm @ 50A, 10V | 4V @ 150µA | 110nC @ 10V | ±20V | 4490pF @ 20V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 60V 100A 8TDSON |
6,048 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 6V, 10V | 3.4mOhm @ 50A, 10V | 3.3V @ 41µA | 41nC @ 10V | ±20V | 3000pF @ 30V | - | 2.5W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 100A 8-PQFN |
7,002 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 21A (Ta), 100A (Tc) | 10V | 4.1mOhm @ 50A, 10V | 4V @ 150µA | 100nC @ 10V | ±20V | 4175pF @ 30V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 200V 5.1A 8PQFN |
5,058 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 5.1A (Ta) | 10V | 55mOhm @ 7.5A, 10V | 5V @ 150µA | 54nC @ 10V | ±20V | 2290pF @ 100V | - | 3.6W (Ta), 8.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 70A TO263-3 |
13,572 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 70A (Tc) | 10V | 11.3mOhm @ 70A, 10V | 4V @ 83µA | 66nC @ 10V | ±20V | 4355pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 8.3A DIRECTFET |
5,328 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 8.3A (Ta), 47A (Tc) | 10V | 22mOhm @ 8.2A, 10V | 4.9V @ 100µA | 31nC @ 10V | ±20V | 1360pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MZ | DirectFET™ Isometric MZ |
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Infineon Technologies |
MOSFET N CH 40V 90A DIRECTFET MX |
6,192 |
|
HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 6V, 10V | 1.4mOhm @ 90A, 10V | 3.9V @ 150µA | 212nC @ 10V | ±20V | 6852pF @ 25V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 40V 209A |
8,514 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 209A (Tc) | 4.5V, 10V | 1.25mOhm @ 123A, 10V | 2.5V @ 150µA | 111nC @ 4.5V | ±20V | 6904pF @ 25V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric ME | DirectFET™ Isometric ME |
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Infineon Technologies |
MOSFET N-CH 25V 40A 8TDSON IND |
6,462 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 40A (Ta), 100A (Tc) | 4.5V, 10V | 0.95mOhm @ 30A, 10V | 2V @ 250µA | 49nC @ 10V | ±16V | 3200pF @ 12V | - | 2.5W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 150V 4.9A DIRECTFET |
3,544 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 4.9A (Ta), 28A (Tc) | 10V | 56mOhm @ 5.6A, 10V | 5V @ 100µA | 36nC @ 10V | ±20V | 1411pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MZ | DirectFET™ Isometric MZ |
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Infineon Technologies |
MOSFET N-CH TO252-3 |
7,596 |
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CoolMOS™ CFD7 | N-Channel | MOSFET (Metal Oxide) | 650V | 9A (Tc) | 10V | 280mOhm @ 3.6A, 10V | 4.5V @ 180µA | 18nC @ 10V | ±20V | 807pF @ 400V | - | 51W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 95A 8PQFN |
7,056 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 95A (Tc) | 10V | 3.3mOhm @ 50A, 10V | 3.9V @ 100µA | 98nC @ 10V | ±20V | 3174pF @ 25V | - | 4.3W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |