晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 262/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 30V 14A DIRECTFET |
7,614 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta), 55A (Tc) | 4.5V, 10V | 8.1mOhm @ 15A, 10V | 2.35V @ 250µA | 17nC @ 4.5V | ±20V | 1300pF @ 15V | - | 2.1W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ ST | DirectFET™ Isometric ST |
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Infineon Technologies |
MOSFET N-CH 60V 84A D2PAK |
16,968 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 84A (Tc) | 10V | 12mOhm @ 50A, 10V | 4V @ 250µA | 130nC @ 10V | ±20V | 3210pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 64A D2PAK |
18,288 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 64A (Tc) | 10V | 14mOhm @ 32A, 10V | 4V @ 250µA | 81nC @ 10V | ±20V | 1970pF @ 25V | - | 3.8W (Ta), 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 550V 18.1A TO252 |
8,154 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 550V | 18.1A (Tc) | 13V | 280mOhm @ 4.2A, 13V | 3.5V @ 350µA | 32.6nC @ 10V | ±20V | 773pF @ 100V | - | 119W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 90A TO252-3 |
7,920 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 10V | 3.8mOhm @ 90A, 10V | 4V @ 90µA | 98nC @ 10V | ±20V | 8000pF @ 30V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 58A |
7,578 |
|
StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 58A (Tc) | 6V, 10V | 9.9mOhm @ 35A, 10V | 3.7V @ 50µA | 66nC @ 10V | ±20V | 2170pF @ 25V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 80A TO263-3 |
13,638 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 6V, 10V | 8.3mOhm @ 73A, 10V | 3.5V @ 75µA | 55nC @ 10V | ±20V | 3980pF @ 50V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 50A TO263-3 |
18,228 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 8.1mOhm @ 50A, 10V | 2.2V @ 34µA | 29nC @ 4.5V | ±20V | 4900pF @ 30V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 25V 90A TO-252 |
3,400 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 90A (Tc) | 4.5V, 10V | 3.2mOhm @ 60A, 10V | 2V @ 70µA | 41nC @ 5V | ±20V | 5200pF @ 15V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V DPAK-3 |
4,122 |
|
CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 4.5V @ 320µA | 19nC @ 10V | ±20V | 877pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 18A TO252-3 |
3,276 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 180mOhm @ 5.6A, 10V | 4V @ 280µA | 25nC @ 10V | ±20V | 1081pF @ 400V | - | 72W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
COOLMOS P7 800V SOT-223 |
5,310 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 600mOhm @ 3.4A, 10V | 3.5V @ 170µA | 20nC @ 10V | ±20V | 570pF @ 500V | - | 7.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
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Infineon Technologies |
MOSFET N-CH 150V 10A 8VQFN |
4,248 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 10A (Ta), 56A (Tc) | 10V | 31mOhm @ 34A, 10V | 5V @ 150µA | 50nC @ 10V | ±20V | 2300pF @ 50V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 650V 9A TO252-3 |
3,420 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 9A (Tc) | 10V | 360mOhm @ 2.7A, 10V | 4V @ 140µA | 13nC @ 10V | ±20V | 555pF @ 400V | - | 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 51A D2PAK |
16,188 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 51A (Tc) | 10V | 13.9mOhm @ 31A, 10V | 4V @ 250µA | 43nC @ 10V | ±20V | 1420pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 90A TO263-3 |
22,860 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 10V | 3.7mOhm @ 90A, 10V | 4V @ 90µA | 98nC @ 10V | ±20V | 11000pF @ 30V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 25V 100A PQFN |
4,500 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 49A (Ta), 100A (Tc) | 4.5V, 10V | 0.95mOhm @ 50A, 10V | 2.35V @ 150µA | 111nC @ 10V | ±20V | 7330pF @ 13V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 80V 55A DIRECTFET |
7,380 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 55A (Tc) | 10V | 15mOhm @ 12A, 10V | 4.9V @ 100µA | 31nC @ 10V | ±20V | 1320pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MZ | DirectFET™ Isometric MZ |
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Infineon Technologies |
MOSFET N-CH 40V 100A 8TDSON |
6,624 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 1.9mOhm @ 50A, 10V | 2V @ 50µA | 81nC @ 10V | ±16V | 4310pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-34 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 120V 44A TDSON-8 |
3,060 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 120V | 8.6A (Ta), 44A (Tc) | 10V | 19mOhm @ 39A, 10V | 4V @ 42µA | 34nC @ 10V | ±20V | 2300pF @ 60V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 20V 49A 8-PQFN |
2,736 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 49A (Ta), 100A (Tc) | 2.5V, 10V | 0.95mOhm @ 50A, 10V | 1.1V @ 150µA | 230nC @ 4.5V | ±12V | 10890pF @ 10V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 200V 15.2A 8TSDSON |
8,892 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 15.2A (Tc) | 10V | 90mOhm @ 7.6A, 10V | 4V @ 30µA | 11.6nC @ 10V | ±20V | 920pF @ 100V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 100A TDSON-8 |
8,658 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 34A (Ta), 100A (Tc) | 4.5V, 10V | 1.4mOhm @ 30A, 10V | 2.2V @ 250µA | 131nC @ 10V | ±20V | 10000pF @ 15V | - | 2.5W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 40V 100A TDSON-8 |
3,834 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 30A (Ta), 100A (Tc) | 4.5V, 10V | 1.8mOhm @ 50A, 10V | 2V @ 85µA | 150nC @ 10V | ±20V | 12000pF @ 20V | - | 2.5W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 20V 100A TDSON-8 |
2,466 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 20V | 25A (Ta), 100A (Tc) | 2.5V, 4.5V | 2.6mOhm @ 50A, 4.5V | 1.2V @ 200µA | 52.7nC @ 4.5V | ±12V | 7800pF @ 10V | - | 2.8W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
6,480 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4.5V, 10V | 8mOhm @ 42A, 10V | 3V @ 250µA | 66nC @ 5V | ±16V | 2900pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 80V 10A 8-SOIC |
5,544 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 10A (Ta) | 10V | 13.4mOhm @ 10A, 10V | 4.9V @ 100µA | 41nC @ 10V | ±20V | 1620pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 800V 4A 3TO252 |
3,942 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 1.3Ohm @ 2.5A, 10V | 3.9V @ 240µA | 31nC @ 10V | ±20V | 570pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 100A PQFN |
3,562 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 42A (Ta), 100A (Tc) | 4.5V, 10V | 1.3mOhm @ 50A, 10V | 2.35V @ 150µA | 120nC @ 10V | ±20V | 7200pF @ 15V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 71A TDSON-8 |
2,682 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 11A (Ta), 71A (Tc) | 10V | 11.8mOhm @ 50A, 10V | 4V @ 70µA | 56nC @ 10V | ±20V | 3700pF @ 50V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |