晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 367/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STMicroelectronics |
MOSFET N-CH 1200V 45A HIP247 |
7,434 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 40A (Tc) | 20V | 100mOhm @ 20A, 20V | 2.6V @ 1mA (Typ) | 105nC @ 20V | +25V, -10V | 1700pF @ 400V | - | 270W (Tc) | -55°C ~ 200°C (TJ) | Through Hole | HiP247™ | TO-247-3 |
|
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|
Microsemi |
MOSFET N-CH 500V 51A SOT-227 |
4,212 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 51A (Tc) | 10V | 75mOhm @ 37A, 10V | 5V @ 2.5mA | 290nC @ 10V | ±30V | 11600pF @ 25V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
|
|
|
Microsemi |
MOSFET N-CH 600V 42A SOT-227 |
6,156 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 600V | 42A (Tc) | 10V | 110mOhm @ 28A, 10V | 5V @ 2.5mA | 280nC @ 10V | ±30V | 11300pF @ 25V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
|
|
|
Microsemi |
MOSFET N-CH 100V 142A SOT227 |
4,716 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 142A (Tc) | 10V | 11mOhm @ 71A, 10V | 4V @ 2.5mA | 300nC @ 10V | ±30V | 8600pF @ 25V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
|
|
Microsemi |
MOSFET N-CH 1000V 25A SOT-227 |
4,122 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 25A (Tc) | 10V | 330mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | ±30V | 9835pF @ 25V | - | 545W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
|
|
|
Microsemi |
MOSFET N-CH 1200V 18A SOT-227 |
3,472 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 18A (Tc) | 10V | 580mOhm @ 14A, 10V | 5V @ 2.5mA | 300nC @ 10V | ±30V | 9670pF @ 25V | - | 545W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
|
|
|
Microsemi |
MOSFET N-CH 600V 40A SOT-227 |
5,796 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 40A (Tc) | 10V | 70mOhm @ 20A, 10V | 3.9V @ 1mA | 259nC @ 10V | ±20V | 7015pF @ 25V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
|
|
Microsemi |
MOSFET N-CH 800V 58A SOT-227 |
6,372 |
|
- | N-Channel | MOSFET (Metal Oxide) | 800V | 60A | 10V | 110mOhm @ 43A, 10V | 5V @ 5mA | 570nC @ 10V | ±30V | 17550pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
|
|
Microsemi |
MOSFET N-CH 1200V 34A SOT-227 |
3,816 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1200V | 35A (Tc) | 10V | 300mOhm @ 25A, 10V | 5V @ 2.5mA | 560nC @ 10V | ±30V | 18200pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
|
|
Microsemi |
MOSFET N-CH 1000V 37A SOT-227 |
8,874 |
|
POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 1000V | 37A (Tc) | 10V | 210mOhm @ 18.5A, 10V | 5V @ 5mA | 395nC @ 10V | ±30V | 9750pF @ 25V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
|
|
|
Rohm Semiconductor |
N-CHANNEL MOSFET, 2.5V. MOSFETS |
3,222 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS=-3 |
8,568 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH VDSS=20 |
7,344 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS=-3 |
7,290 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS-20 |
7,362 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH VDSS30V |
8,334 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Micro Commercial Co |
MOSFET N-CHANNEL 30V 5A SOT23 |
7,434 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 5A | 2.5V, 10V | 42mOhm @ 5A, 10V | 1V @ 250µA | 10nC @ 10V | ±10V | 245pF @ 15V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS=-2 |
2,412 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS-20 |
2,556 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH VDSS20V |
2,628 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS-20 |
3,726 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH VDSS30V |
2,052 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH VDSS60V |
3,526 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH VDSS20V |
4,986 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 1.4A UFM |
6,714 |
|
U-MOSII | P-Channel | MOSFET (Metal Oxide) | 30V | 1.4A (Ta) | 4V, 10V | 240mOhm @ 650mA, 10V | - | - | ±20V | 137pF @ 15V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |
|
|
|
Rohm Semiconductor |
4V DRIVE NCH MOSFET (AEC-Q101 QU |
2,700 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 500mA (Ta) | 4V, 10V | 550mOhm @ 500mA, 10V | 2.5V @ 1mA | - | ±20V | 45pF @ 10V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount | SMT3 | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 12V 2.9A 4-MICROFOOT |
7,038 |
|
- | P-Channel | MOSFET (Metal Oxide) | 12V | 2.9A (Ta) | 1.5V, 3.7V | 80mOhm @ 1.5A, 3.7V | 900mV @ 250µA | 17nC @ 8V | ±8V | 650pF @ 6V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 4-MICRO FOOT® (0.8x0.8) | 4-XFBGA |
|
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH+SBD VDS |
5,652 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS-20 |
4,824 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH VDSS20V |
3,870 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |