晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 43/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 150V 174A TO263-7 |
23,268 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 174A (Tc) | 8V, 10V | 4.4mOhm @ 87A, 10V | 4.6V @ 264µA | 100nC @ 10V | ±20V | 8000pF @ 75V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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STMicroelectronics |
MOSFET N-CH 500V 12A TO220FP |
6,216 |
|
MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 350mOhm @ 6A, 10V | 5V @ 50µA | 39nC @ 10V | ±30V | 1000pF @ 25V | - | 35W (Tc) | -65°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
|
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|
Infineon Technologies |
MOSFET N-CH 100V 300A 8HSOF |
255,786 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 300A (Tc) | 6V, 10V | 1.5mOhm @ 150A, 10V | 3.8V @ 250µA | 211nC @ 10V | ±20V | 16000pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
|
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|
STMicroelectronics |
MOSFET N-CH 300V 53A D2PAK |
21,084 |
|
Automotive, AEC-Q101, MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 300V | 53A (Tc) | 10V | 40mOhm @ 26.5A, 10V | 5V @ 250µA | 95nC @ 10V | ±25V | 4240pF @ 100V | - | 250W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
Vishay Siliconix |
MOSFET N-CH 600V 21A D2PAK |
65,052 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 86nC @ 10V | ±30V | 1920pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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STMicroelectronics |
MOSFET N-CH 1000V 6.5A TO-220 |
16,206 |
|
SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 6.5A (Tc) | 10V | 1.85Ohm @ 3.15A, 10V | 4.5V @ 100µA | 102nC @ 10V | ±30V | 2180pF @ 25V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
STMicroelectronics |
MOSFET N-CH 1500V 2.5A TO3PF |
14,562 |
|
PowerMESH™ | N-Channel | MOSFET (Metal Oxide) | 1500V | 2.5A (Tc) | 10V | 9Ohm @ 1.3A, 10V | 5V @ 250µA | 29.3nC @ 10V | ±30V | 939pF @ 25V | - | 63W (Tc) | 150°C (TJ) | Through Hole | ISOWATT-218FX | ISOWATT218FX |
|
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|
Infineon Technologies |
MOSFET N-CH 200V 88A TO263-3 |
16,692 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 88A (Tc) | 10V | 10.7mOhm @ 88A, 10V | 4V @ 270µA | 87nC @ 10V | ±20V | 7100pF @ 100V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Infineon Technologies |
MOSFET N-CH 40V 195A TO-220AB |
30,720 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 1.75mOhm @ 195A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 9200pF @ 25V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 800V 17A TO-220AB |
35,268 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 290mOhm @ 11A, 10V | 3.9V @ 1mA | 177nC @ 10V | ±20V | 2320pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
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|
Infineon Technologies |
MOSFET N-CH 150V 37A TO220-FP |
22,488 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 37A (Tc) | 8V, 10V | 10.5mOhm @ 37A, 10V | 4V @ 160µA | 55nC @ 10V | ±20V | 4300pF @ 75V | - | 40.5W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
|
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|
IXYS |
MOSFET P-CH 100V 76A TO-220 |
9,540 |
|
TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 100V | 76A (Tc) | 10V | 25mOhm @ 500mA, 10V | 4V @ 250µA | 197nC @ 10V | ±15V | 13700pF @ 25V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
IXYS |
MOSFET P-CH 85V 96A TO-263 |
18,456 |
|
TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 85V | 96A (Tc) | 10V | 13mOhm @ 48A, 10V | 4V @ 250µA | 180nC @ 10V | ±15V | 13100pF @ 25V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 600V 20A TO-220 |
21,894 |
|
MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 165mOhm @ 10A, 10V | 4V @ 250µA | 60nC @ 10V | ±30V | 1800pF @ 50V | - | 140W (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Texas Instruments |
MOSFET N-CH 60V 200A TO-220-3 |
22,146 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 200A (Ta) | 4.5V, 10V | 1.6mOhm @ 100A, 10V | 2.2V @ 250µA | 108nC @ 10V | ±20V | 11430pF @ 30V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 500V 17A TO-220 |
17,592 |
|
SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 500V | 17A (Tc) | 10V | 270mOhm @ 8.5A, 10V | 4.5V @ 100µA | 119nC @ 10V | ±30V | 2600pF @ 25V | - | 190W (Tc) | -50°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 20.7A TO220-3 |
17,898 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20.7A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114nC @ 10V | ±20V | 2400pF @ 25V | - | 34.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-31 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V 20.7A TO-220 |
8,838 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20.7A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114nC @ 10V | ±20V | 2400pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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|
IXYS |
MOSFET N-CH 100V 180A TO-220 |
15,474 |
|
TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 6.4mOhm @ 25A, 10V | 4.5V @ 250µA | 151nC @ 10V | ±30V | 6900pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Texas Instruments |
MOSFET N-CH 100V 200A TO263 |
19,686 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 200A (Ta) | 6V, 10V | 2.4mOhm @ 100A, 10V | 3.2V @ 250µA | 153nC @ 10V | ±20V | 12000pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DDPAK/TO-263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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|
|
Infineon Technologies |
MOSFET N-CH 800V 17A TO220FP |
53,322 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 290mOhm @ 11A, 10V | 3.9V @ 1mA | 177nC @ 10V | ±20V | 2320pF @ 25V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 Full Pack |
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Texas Instruments |
MOSFET N-CH 100V TO-220 |
7,459 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 150A (Ta) | 6V, 10V | 2.7mOhm @ 100A, 10V | 3.2V @ 250µA | 153nC @ 10V | ±20V | 12000pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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|
IXYS |
MOSFET P-CH 200V 26A TO-263 |
13,326 |
|
PolarP™ | P-Channel | MOSFET (Metal Oxide) | 200V | 26A (Tc) | 10V | 170mOhm @ 13A, 10V | 4V @ 250µA | 56nC @ 10V | ±20V | 2740pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
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Infineon Technologies |
MOSFET N-CH 40V 240A D2PAK-7 |
28,362 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 0.75mOhm @ 100A, 10V | 3.9V @ 250µA | 460nC @ 10V | ±20V | 13975pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) |
|
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STMicroelectronics |
MOSFET N-CH 900V 11A TO-247 |
14,058 |
|
SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 900V | 11A (Tc) | 10V | 880mOhm @ 5.5A, 10V | 4.5V @ 100µA | 152nC @ 10V | ±30V | 3500pF @ 25V | - | 230W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
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Cree/Wolfspeed |
MOSFET N-CH 1700V 4.9A TO247 |
135,762 |
|
Z-FET™ | N-Channel | SiCFET (Silicon Carbide) | 1700V | 4.9A (Tc) | 20V | 1.1Ohm @ 2A, 20V | 2.4V @ 100µA | 13nC @ 20V | +25V, -10V | 191pF @ 1000V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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|
Vishay Siliconix |
MOSFET P-CH 60V 90A TO220AB |
21,792 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 4.5V, 10V | 9.3mOhm @ 30A, 10V | 3V @ 250µA | 240nC @ 10V | ±20V | 9200pF @ 25V | - | 2.4W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
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STMicroelectronics |
MOSFET N-CHANNEL 600V 30A TO247 |
7,800 |
|
MDmesh™ M6 | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 99mOhm @ 15A, 10V | 4.75V @ 250µA | 44.3nC @ 10V | ±25V | 1960pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET P-CH 100V 52A TO-3P |
16,464 |
|
PolarP™ | P-Channel | MOSFET (Metal Oxide) | 100V | 52A (Tc) | 10V | 50mOhm @ 500mA, 10V | 4.5V @ 250µA | 60nC @ 10V | ±20V | 2845pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Cree/Wolfspeed |
MOSFET N-CH 1200V 10A TO-247-3 |
157,680 |
|
Z-FET™ | N-Channel | SiCFET (Silicon Carbide) | 1200V | 10A (Tc) | 20V | 370mOhm @ 6A, 20V | 2.8V @ 1.25mA (Typ) | 20.4nC @ 20V | +25V, -10V | 259pF @ 1000V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |