晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 476/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
TRENCH 6 40V SL NFET |
7,920 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 35A (Ta), 185A (Tc) | 10V | 1.7mOhm @ 50A, 10V | 3.5V @ 130µA | 47nC @ 10V | ±20V | 3300pF @ 25V | - | 3.8W (Ta), 106W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-LFPAK | 8-PowerSMD, Gull Wing |
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Infineon Technologies |
TRANSISTOR N-CH |
7,200 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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|
ON Semiconductor |
MOSFET N-CH 60V 6DFN |
4,680 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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|
ON Semiconductor |
MOSFET N-CH 40V 101A DPAK |
5,544 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Infineon Technologies |
MOSFET N-CH 40V 80A TO262-3-1 |
5,400 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4.6mOhm @ 80A, 10V | 4V @ 35µA | 43nC @ 10V | ±20V | 3440pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
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Infineon Technologies |
MOSFET N-CH 40V 80A TO220-3-1 |
6,642 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4.6mOhm @ 80A, 10V | 4V @ 35µA | 43nC @ 10V | ±20V | 3440pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 50A IPAK |
7,146 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 6.8mOhm @ 50A, 10V | 2.5V @ 100µA | 49nC @ 4.5V | ±16V | 3779pF @ 50V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
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|
Infineon Technologies |
MOSFET N-CH 60V 45A TO263-3 |
7,380 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 45A (Tc) | 10V | 9.4mOhm @ 45A, 10V | 4V @ 34µA | 47nC @ 10V | ±20V | 3785pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Infineon Technologies |
MOSFET P-CH 100V 23A D2PAK |
4,842 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 23A (Tc) | 10V | 117mOhm @ 14A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 1450pF @ 25V | - | 3.1W (Ta), 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
Infineon Technologies |
MOSFET P-CH 55V 31A D2PAK |
2,718 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 31A (Tc) | 10V | 60mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1200pF @ 25V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 500V 6A MP3A |
6,768 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 6A (Ta) | 10V | 1.3Ohm @ 3A, 10V | - | - | ±30V | 600pF @ 25V | - | 65W (Tc) | 150°C (TJ) | Surface Mount | MP-3A | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Vishay Siliconix |
MOSFET P-CH 50V 9.9A DPAK |
8,226 |
|
- | P-Channel | MOSFET (Metal Oxide) | 50V | 9.9A (Tc) | 10V | 280mOhm @ 5.7A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 490pF @ 25V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 150V 13A DPAK |
5,292 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 295mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 860pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 28A 8SOP-ADV |
4,842 |
|
U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 28A (Ta) | 4.5V, 10V | 5.6mOhm @ 14A, 10V | 2.3V @ 300µA | 34nC @ 10V | ±20V | 2900pF @ 10V | - | 1.6W (Ta), 42W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET P-CH 40V 90A TO252-3 |
4,482 |
|
* | - | - | - | - | 10V | - | - | - | ±20V | - | - | - | - | - | - | - |
|
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ON Semiconductor |
MOSFET N-CH 600V 4.6A DPAK |
4,194 |
|
Automotive, AEC-Q101, SuperFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4.6A (Tc) | 10V | 1.1Ohm @ 4.6A, 10V | 5V @ 250µA | 21nC @ 10V | ±30V | 570pF @ 25V | - | 54W (Tj) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 60V TO252-3 |
6,372 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 35A (Tc) | 10V | 38mOhm @ 35A, 10V | 4V @ 1.7mA | 63nC @ 10V | ±20V | 2500pF @ 30V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 7A DPAK |
6,894 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Ta) | 10V | 600mOhm @ 3.5A, 10V | 3.7V @ 350µA | 15nC @ 10V | ±30V | 490pF @ 300V | Super Junction | 60W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 80A DPAK-3 |
6,858 |
|
U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Ta) | 6V, 10V | 3.1mOhm @ 40A, 10V | 3V @ 1mA | 87nC @ 10V | ±20V | 4340pF @ 10V | - | 100W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 80A DPAK-3 |
7,956 |
|
U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Ta) | 6V, 10V | 5.5mOhm @ 40A, 10V | 3V @ 1mA | 85nC @ 10V | ±20V | 4200pF @ 10V | - | 100W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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ON Semiconductor |
MOSFET N-CH 60V 155A |
4,320 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 3.9A (Ta), 113A (Tc) | 4.5V, 10V | 2.4mOhm @ 50A, 10V | 2V @ 135µA | 52nC @ 10V | ±20V | 3600pF @ 25V | - | 3.9W (Ta), 113A (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-LFPAK | 8-PowerSMD, Gull Wing |
|
|
|
ON Semiconductor |
MOSFET N-CH 40V LFPAK4 |
4,968 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Siliconix |
MOSFET P-CH 60V 8.8A DPAK |
7,488 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 8.8A (Tc) | 10V | 280mOhm @ 5.3A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 570pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 55A TO-220 |
4,302 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 80V | 55A (Tc) | 10V | 12.2mOhm @ 17.5A, 10V | 4V @ 300µA | 25nC @ 10V | ±20V | 1700pF @ 40V | - | 72W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
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|
Nexperia |
PSMN6R9-100YSF/SOT669/LFPAK |
2,898 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 100A | 10V | - | - | 50.3nC @ 10V | - | - | - | 238W | 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
|
|
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 900V 4A ITO220 |
8,082 |
|
- | N-Channel | MOSFET (Metal Oxide) | 900V | 4A (Tc) | 10V | 4Ohm @ 2A, 10V | 4V @ 250µA | 25nC @ 10V | ±30V | 955pF @ 25V | - | 38.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
|
|
|
ON Semiconductor |
MOSFET N-CH 40V 35A 185A 5DFN |
2,754 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 35A (Ta), 185A (Tc) | 10V | 1.7mOhm @ 50A, 10V | 3.5V @ 250µA | 47nC @ 10V | ±20V | 3300pF @ 25V | - | 3.8W (Ta), 106W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
|
|
ON Semiconductor |
T6 40V LL LFPAK |
2,340 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 41A (Ta), 237A (Tc) | 4.5V, 10V | 1.2mOhm @ 50A, 10V | 2V @ 170µA | 93nC @ 10V | ±20V | 5600pF @ 25V | - | 3.8W (Ta), 128W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-LFPAK | 8-PowerSMD, Gull Wing |
|
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STMicroelectronics |
MOSFET N-CH 30V 51A POWERFLAT56 |
3,114 |
|
STripFET™ V | N-Channel | MOSFET (Metal Oxide) | 30V | 51A (Tc) | 4.5V, 10V | 14.5mOhm @ 6.3A, 10V | 2.5V @ 250µA | 5nC @ 4.5V | ±22V | 724pF @ 25V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
|
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|
ON Semiconductor |
MOSFET N-CH 800V 6A TO220F |
3,600 |
|
SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 850mOhm @ 3A, 10V | 4.5V @ 600µA | 29nC @ 10V | ±20V | 1315pF @ 100V | - | 28.4W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |