晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 473/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
PTNG 100V LL |
2,124 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO263-3 |
7,074 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 5.4mOhm @ 80A, 10V | 4V @ 52µA | 47nC @ 10V | ±20V | 3250pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
DIFFERENTIATED MOSFETS |
6,120 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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|
ON Semiconductor |
MOSFET N-CH 800V TO-220-3 |
3,528 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 800V | 1.5A (Tc) | 10V | 6.3Ohm @ 750mA, 10V | 5V @ 250µA | 15nC @ 10V | ±30V | 550pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 (Y-Forming) | TO-220-3 Full Pack, Formed Leads |
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Rohm Semiconductor |
MOSFET N-CH 30V 14A SOP8 |
2,430 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4V, 10V | - | - | - | ±20V | - | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
|
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Alpha & Omega Semiconductor |
MOSFET N-CH 150V 32A TO263 |
8,064 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 4.2A (Ta), 32A (Tc) | 4.5V, 10V | 46mOhm @ 20A, 10V | 2.7V @ 250µA | 40nC @ 10V | ±20V | 2150pF @ 75V | - | 2.1W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 18A 8SOP |
4,158 |
|
U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V, 10V | 5.8mOhm @ 9A, 10V | 2.3V @ 300µA | 34nC @ 10V | ±20V | 2900pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.173", 4.40mm Width) |
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Infineon Technologies |
MOSFET N-CH 700V 10.5A TO220-3 |
4,122 |
|
CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 700V | 10.5A (Tc) | 10V | 600mOhm @ 1A, 10V | 3.5V @ 210µA | 22nC @ 10V | ±20V | 474pF @ 100V | - | 86W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-31 Full Pack | TO-220-3 Full Pack |
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Renesas Electronics America |
MOSFET N-CH 100V MP-3/TO-251 |
3,294 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 36A (Ta) | 4.5V, 10V | 33mOhm @ 18A, 10V | - | 72nC @ 10V | ±20V | 3600pF @ 10V | - | 1W (Ta), 50W (Tc) | 150°C (TJ) | Through Hole | TO-251 (MP-3) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 40V 90A TO252-3 |
7,524 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 3.6mOhm @ 80A, 10V | 4V @ 90µA | 80nC @ 10V | ±20V | 5200pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N CH 100V 35A IPAK |
5,706 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 35A (Tc) | 10V | 28.5mOhm @ 21A, 10V | 4V @ 50µA | 59nC @ 10V | ±20V | 1690pF @ 25V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 11.1A DPAK-0S |
2,934 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 11.1A (Ta) | 10V | 440mOhm @ 5.5A, 10V | 3.5V @ 450µA | 25nC @ 10V | ±30V | 890pF @ 300V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 55V 18A DPAK |
2,322 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 18A (Tc) | 10V | 110mOhm @ 9.6A, 10V | 4V @ 250µA | 32nC @ 10V | ±20V | 650pF @ 25V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 650V 8.7A TO252 |
6,678 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 8.7A (Tc) | 10V | 420mOhm @ 3.4A, 10V | 4.5V @ 340µA | 32nC @ 10V | ±20V | 870pF @ 100V | - | 83.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 650V 8.7A TO252 |
3,654 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 8.7A (Tc) | 10V | 420mOhm @ 3.4A, 10V | 4.5V @ 300µA | 31.5nC @ 10V | ±20V | 870pF @ 100V | - | 83.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
LOW POWER_LEGACY |
6,174 |
|
CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 8.7A (Tc) | 10V | 420mOhm @ 3.4A, 10V | 4.5V @ 300µA | 31.5nC @ 10V | ±20V | 870pF @ 100V | - | 83.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3-341 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 500V 14A D2PAK |
2,376 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 380mOhm @ 7A, 10V | 4.5V @ 250µA | 51nC @ 10V | ±30V | 2297pF @ 25V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 7A TO-251 |
4,788 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 4V @ 250µA | 40nC @ 10V | ±30V | 680pF @ 100V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 6.2A DPAK |
7,308 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Ta) | 10V | 820mOhm @ 3.1A, 10V | 3.7V @ 310µA | 12nC @ 10V | ±30V | 390pF @ 300V | Super Junction | 60W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 30V 300A 56LFPAK |
5,868 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 300A (Ta) | 4.5V, 10V | 0.87mOhm @ 25A, 10V | 2.2V @ 1mA | 109nC @ 10V | ±20V | 7668pF @ 15V | - | 227W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SOT-1023, 4-LFPAK |
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Sanken |
MOSFET N-CH 30V 85A TO-263 |
7,650 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 85A (Tc) | 4.5V, 10V | 2.4mOhm @ 110A, 10V | 2.5V @ 1.5mA | 94.2nC @ 10V | ±20V | 6200pF @ 15V | - | 135W (Tc) | 150°C (TJ) | Surface Mount | TO-263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Sanken |
MOSFET N-CH 40V 85A TO-263 |
3,474 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 85A (Tc) | 4.5V, 10V | 3mOhm @ 82.5A, 10V | 2.5V @ 1.5mA | 97.6nC @ 10V | ±20V | 6200pF @ 25V | - | 135W (Tc) | 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Sanken |
MOSFET N-CH 60V 85A TO-263 |
4,446 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 85A (Tc) | 4.5V, 10V | 4.7mOhm @ 55A, 10V | 2.5V @ 1.5mA | 90.6nC @ 10V | ±20V | 6210pF @ 25V | - | 135W (Tc) | 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Sanken |
MOSFET N-CH 75V 85A TO-263 |
4,266 |
|
- | N-Channel | MOSFET (Metal Oxide) | 75V | 85A (Tc) | 4.5V, 10V | 6.6mOhm @ 44A, 10V | 2.5V @ 1.5mA | 91nC @ 10V | ±20V | 6340pF @ 25V | - | 135W (Tc) | 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Sanken |
MOSFET N-CH 100V 66A TO-263 |
3,580 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 66A (Tc) | 4.5V, 10V | 11.6mOhm @ 33A, 10V | 2.5V @ 1.5mA | 88.8nC @ 10V | ±20V | 6420pF @ 25V | - | 135W (Tc) | 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|
ON Semiconductor |
MOSFET N-CH 60V 28A 150A 5DFN |
6,318 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 28A (Ta), 150A (Tc) | 4.5V, 10V | 2.4mOhm @ 50A, 10V | 2V @ 135µA | 52nC @ 10V | ±20V | 3600pF @ 25V | - | 3.7W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET P-CH 30V 80A TO263-3 |
5,958 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 6.9mOhm @ 80A, 10V | 2V @ 130µA | 80nC @ 10V | +5V, -16V | 5700pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
MOSFET N-CH 800V 7.4A TO220F |
4,464 |
|
- | N-Channel | MOSFET (Metal Oxide) | 800V | 7.4A (Tc) | 10V | 1.63Ohm @ 4A, 10V | 4.5V @ 250µA | 32nC @ 10V | ±30V | 1650pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 9.5A TO220 |
6,048 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 9.5A (Ta), 70A (Tc) | 6V, 10V | 10mOhm @ 20A, 10V | 3.4V @ 250µA | 52nC @ 10V | ±20V | 2785pF @ 50V | - | 2.1W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CHANNEL 100V 70A TO262 |
4,932 |
|
AlphaSGT™ | N-Channel | MOSFET (Metal Oxide) | 100V | 70A (Tc) | 6V, 10V | 9.7mOhm @ 20A, 10V | 3.4V @ 250µA | 52nC @ 10V | ±20V | 2785pF @ 50V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |