晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 481/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 900V 5.1A TO-262 |
5,958 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 5.1A (Tc) | 10V | 1.2Ohm @ 2.8A, 10V | 3.5V @ 310µA | 28nC @ 10V | ±20V | 710pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 900V TO220-3 |
5,598 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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|
Infineon Technologies |
MOSFET N-CH 900V TO-262 |
5,364 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 900V TO-220 |
3,474 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET P-CH 20V 7.2A 8TSSOP |
8,820 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 7.2A (Ta) | 1.8V, 4.5V | 10mOhm @ 8.8A, 4.5V | 800mV @ 400µA | 105nC @ 5V | ±8V | - | - | 1.05W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
|
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|
Infineon Technologies |
MOSFET N-CH 25V 44A 8PQFN |
3,132 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 44A (Ta) | 4.5V, 10V | 1.1mOhm @ 50A, 10V | 2.1V @ 100µA | 77nC @ 10V | ±20V | 4812pF @ 13V | - | 3.5W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
|
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|
ON Semiconductor |
MOSFET P-CH 250V 6A |
2,736 |
|
QFET® | P-Channel | MOSFET (Metal Oxide) | 250V | 6A (Tc) | 10V | 620mOhm @ 3A, 10V | 5V @ 250µA | 38nC @ 10V | ±30V | 1180pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 (Y-Forming) | TO-220-3 Full Pack, Formed Leads |
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Infineon Technologies |
MOSFET N-CH 650V 6A TO220 |
6,696 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 6A (Tc) | 10V | 660mOhm @ 2.1A, 10V | 4.5V @ 200µA | 22nC @ 10V | ±20V | 615pF @ 100V | - | 27.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
|
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Taiwan Semiconductor Corporation |
MOSFET N-CH 800V 5.5A TO262S |
3,888 |
|
- | N-Channel | MOSFET (Metal Oxide) | 800V | 5.5A (Tc) | 10V | 1.2Ohm @ 1.8A, 10V | 4V @ 250µA | 19.4nC @ 10V | ±30V | 685pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262S (I2PAK) | TO-262-3 Short Leads, I²Pak |
|
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|
Infineon Technologies |
MOSFET N-CH 120V 56A TO262-3 |
8,604 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 120V | 56A (Ta) | 10V | 14.7mOhm @ 56A, 10V | 4V @ 61µA | 49nC @ 10V | ±20V | 3220pF @ 60V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Texas Instruments |
MOSFET P-CH 15V 2.3A 8-SOIC |
8,640 |
|
- | P-Channel | MOSFET (Metal Oxide) | 15V | 2.3A (Ta) | 2.7V, 10V | 90mOhm @ 2.5A, 10V | 1.5V @ 250µA | 11.25nC @ 10V | +2V, -15V | - | - | 791mW (Ta) | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N CH 150V 3.4A POWER33 |
8,532 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 3.4A (Ta) | 6V, 10V | 90mOhm @ 3.4A, 10V | 4V @ 250mA | 9nC @ 10V | ±20V | 525pF @ 75V | - | 2.3W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power33 | 8-PowerTDFN |
|
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Infineon Technologies |
MOSFET N-CH 60V 90A TO252-3 |
5,724 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 4.5V, 10V | 3.5mOhm @ 90A, 10V | 2.2V @ 90µA | 170nC @ 10V | ±16V | 13000pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 60V 5X6DFN |
5,076 |
|
SDMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Ta), 81A (Tc) | 4.5V, 10V | 6.5mOhm @ 20A, 10V | 2.5V @ 250µA | 96nC @ 10V | ±20V | 5800pF @ 30V | - | 2.3W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
|
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Infineon Technologies |
MOSFET N-CH 100V 57A D2PAK |
4,680 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 57A (Tc) | 10V | 23mOhm @ 28A, 10V | 4V @ 250µA | 130nC @ 10V | ±20V | 3130pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 100V 7.2A TO220FP |
2,124 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 7.2A (Tc) | 4V, 5V | 270mOhm @ 4.3A, 5V | 2V @ 250µA | 12nC @ 5V | ±10V | 490pF @ 25V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Infineon Technologies |
LOW POWER_LEGACY |
3,508 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET N-CH 250V 630MA 4-DIP |
8,838 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 630mA (Ta) | 10V | 1.1Ohm @ 380mA, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Infineon Technologies |
MOSFET N-CH 55V 77A TO263-3 |
5,688 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 77A (Tc) | 10V | 11.7mOhm @ 38A, 10V | 4V @ 93µA | 60nC @ 10V | ±20V | 1770pF @ 25V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO263-3 |
8,712 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 10.7mOhm @ 40A, 10V | 2V @ 93µA | 80nC @ 10V | ±20V | 2075pF @ 25V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 60V 47A D2PAK |
8,802 |
|
UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 47A (Tc) | 4.5V, 10V | 22mOhm @ 47A, 10V | 3V @ 250µA | 46nC @ 10V | ±16V | 1480pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 11A TO220F |
4,716 |
|
aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 399mOhm @ 3.8A, 10V | 4.1V @ 250µA | 11nC @ 10V | ±30V | 545pF @ 100V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 11A TO262 |
7,200 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 399mOhm @ 3.8A, 10V | 4.1V @ 250µA | 11nC @ 10V | ±30V | 545pF @ 100V | - | 178W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 11A TO262F |
3,024 |
|
aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 399mOhm @ 3.8A, 10V | 4.1V @ 250µA | 11nC @ 10V | ±30V | 545pF @ 100V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | - | TO-262-3 Full Pack, I²Pak |
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Rohm Semiconductor |
MOSFET N-CH 10V DRIVE LPTS |
7,776 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Ta) | 10V | 1.6Ohm @ 2.5A, 10V | 4.5V @ 1mA | 10.8nC @ 10V | ±30V | 320pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 11A TO220F |
3,690 |
|
aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 399mOhm @ 3.8A, 10V | 4.1V @ 250µA | 11nC @ 10V | ±30V | 545pF @ 100V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
|
|
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Infineon Technologies |
MOSFET P-CH 100V 15A TO220-3 |
3,978 |
|
SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 100V | 15A (Tc) | 10V | 240mOhm @ 10.6A, 10V | 2.1V @ 1.54mA | 48nC @ 10V | ±20V | 1280pF @ 25V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V D2-PAK AUTO |
7,434 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 18A (Tc) | 4V, 10V | 60mOhm @ 11A, 10V | 2V @ 250µA | 15nC @ 5V | ±16V | 480pF @ 25V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
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Infineon Technologies |
MOSFET N-CH 75V 82A D2PAK |
8,784 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 82A (Tc) | 10V | 13mOhm @ 43A, 10V | 4V @ 250µA | 160nC @ 10V | ±20V | 3820pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 30V 35A 1212-8 |
7,596 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 6.6mOhm @ 18.9A, 10V | 1.5V @ 250µA | 31.5nC @ 4.5V | ±12V | 2610pF @ 15V | - | 3.78W (Ta), 52W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |