晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 488/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N CH 40V 14A 8-SO |
2,448 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 14A (Ta) | 7V | 10mOhm @ 14A, 7V | 2V @ 250µA | 100nC @ 7V | ±8V | 3520pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N-CH 40V 15A TO220 |
4,410 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 15A (Ta), 220A (Tc) | 10V | 4.2mOhm @ 20A, 10V | 3.7V @ 250µA | 86nC @ 10V | ±20V | 4300pF @ 20V | - | 2.1W (Ta), 417W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 80V 75A TO-220 |
7,866 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 75A (Tc) | 10V | 5.3mOhm @ 75A, 10V | 4.5V @ 250µA | 85nC @ 10V | ±20V | 5960pF @ 40V | - | 146W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 7A TO263 |
7,704 |
|
aMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 650mOhm @ 3.5A, 10V | 4V @ 250µA | 9.2nC @ 10V | ±30V | 434pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 40V LFPAK |
5,148 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Ta) | 10V | 3.2mOhm @ 25A, 10V | - | 39nC @ 10V | ±20V | 3000pF @ 10V | - | 65W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 60V 40A LFPAK |
7,812 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 40A (Ta) | 10V | 5.6mOhm @ 20A, 10V | - | 40nC @ 10V | ±20V | 3000pF @ 10V | - | 65W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 100V 25A LFPAK |
4,176 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 25A (Ta) | 10V | 14mOhm @ 12.5A, 10V | - | 41nC @ 10V | ±20V | 3000pF @ 10V | - | 65W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 75V 14A 8PQFN |
5,670 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 14A (Ta), 75A (Tc) | 10V | 8.5mOhm @ 45A, 10V | 4V @ 100µA | 72nC @ 10V | ±20V | 3110pF @ 25V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Rohm Semiconductor |
MOSFET N-CH 40V 50A TCPT3 |
3,762 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Sanken |
MOSFET N-CH 600V TO-220F |
7,596 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Ta) | 10V | 3.8Ohm @ 1A, 10V | 4V @ 250µA | - | ±30V | 290pF @ 10V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO262-3 |
8,190 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 7.4mOhm @ 80A, 10V | 4V @ 40µA | 56nC @ 10V | ±20V | 4500pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 80V 123A 8PQFN |
8,820 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 123A (Tc) | 6V, 10V | 4.3mOhm @ 44A, 10V | 4V @ 250µA | 56nC @ 10V | ±20V | 4090pF @ 40V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6), Power56 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 70A TO262-3 |
7,002 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 70A (Tc) | 10V | 11.6mOhm @ 70A, 10V | 4V @ 83µA | 66nC @ 10V | ±20V | 4355pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
DIFFERENTIATED MOSFETS |
4,914 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 30V 59A |
6,930 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 59A (Tc) | 4.5V, 10V | 9.5mOhm @ 21A, 10V | 2.25V @ 25µA | 15nC @ 4.5V | ±20V | 1210pF @ 15V | - | 57W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Texas Instruments |
MOSFET N-CH 25V 8SON |
6,552 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 100A (Tc) | 4.5V, 10V | 1.15mOhm @ 40A, 10V | 1.9V @ 250µA | 29nC @ 4.5V | +16V, -12V | 4100pF @ 12.5V | - | 3.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 55V 75A TO-262 |
7,902 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 4.5V, 10V | 8mOhm @ 52A, 10V | 3V @ 250µA | 60nC @ 5V | ±16V | 2880pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 15A TO220 |
7,038 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 290mOhm @ 7.5A, 10V | 3.8V @ 250µA | 15.6nC @ 10V | ±30V | 372pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 80V 15A TO220 |
3,096 |
|
SDMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 15A (Ta), 180A (Tc) | 7V, 10V | 4.5mOhm @ 20A, 10V | 4V @ 250µA | 140nC @ 10V | ±25V | 7820pF @ 40V | - | 1.9W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 15A TO262 |
7,236 |
|
aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 290mOhm @ 7.5A, 10V | 3.8V @ 250µA | 15.6nC @ 10V | ±30V | 717pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 15A TO262F |
3,240 |
|
aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 290mOhm @ 7.5A, 10V | 3.8V @ 250µA | 15.6nC @ 10V | ±30V | 717pF @ 100V | - | 27.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | - | TO-262-3 Full Pack, I²Pak |
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Infineon Technologies |
MOSFET N-CH TO252-3 |
5,688 |
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Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 8.7A (Tc) | 10V | 420mOhm @ 3.4A, 10V | 4.5V @ 345µA | 32nC @ 10V | ±20V | 870pF @ 100V | - | 83.3W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 560V 9A TO-220 |
7,506 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 560V | 9A (Tc) | 10V | 399mOhm @ 4.9A, 10V | 3.5V @ 330µA | 23nC @ 10V | ±20V | 890pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 500V 9A TO-220 |
7,830 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 9A (Ta) | 10V | 399mOhm @ 4.9A, 10V | 3.5V @ 330µA | 4nC @ 10V | ±20V | 890pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 500V 9A TO-262 |
8,514 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 9A (Tc) | 10V | 399mOhm @ 4.9A, 10V | 3.5V @ 330µA | 23nC @ 10V | ±20V | 890pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO220-3 |
8,154 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 6.7mOhm @ 80A, 10V | 2.2V @ 40µA | 75nC @ 10V | ±16V | 5680pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
LOW POWER_NEW |
4,572 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET P-CH 150V 13A TO220AB |
7,524 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 290mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 860pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 80V 8DFN |
2,124 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 650V 8.7A TO220 |
3,726 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 8.7A (Tc) | 10V | 420mOhm @ 3.4A, 10V | 4.5V @ 340µA | 32nC @ 10V | ±20V | 870pF @ 100V | - | 31.2W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |