晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 506/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 75V 100A TO263-3 |
7,902 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 100A (Tc) | 10V | 3.1mOhm @ 100A, 10V | 3.8V @ 155µA | 117nC @ 10V | ±20V | 8130pF @ 37.5V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5A TO-220SIS |
4,086 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 650V | 6A (Ta) | 10V | 1.11Ohm @ 3A, 10V | 4V @ 1mA | 20nC @ 10V | ±30V | 1050pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 600V 18A TO220AB |
8,820 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 202mOhm @ 9A, 10V | 4V @ 250µA | 92nC @ 10V | ±30V | 1640pF @ 100V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 72A TO220F |
3,690 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 72A (Tc) | 10V | 4.2mOhm @ 20A, 10V | 4.1V @ 250µA | 126nC @ 10V | ±20V | 7180pF @ 50V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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|
Sanken |
MOSFET N-CH 60V TO-220F |
5,256 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Ta) | 10V | 28mOhm @ 15A, 10V | 4V @ 250µA | - | ±20V | 2200pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET P-CH TO263-7 |
2,196 |
|
Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 180A (Tc) | 10V | 2.8mOhm @ 100A, 10V | 4V @ 410µA | 250nC @ 10V | ±20V | 17640pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO262-3 |
8,694 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 3.5mOhm @ 80A, 10V | 4V @ 120µA | 110nC @ 10V | ±20V | 7300pF @ 25V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 60V 120A |
3,546 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 3.2mOhm @ 100A, 10V | 4V @ 118µA | 165nC @ 10V | ±20V | 13000pF @ 30V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Alpha & Omega Semiconductor |
MOSFET N-CH 150V 106A TO263 |
3,888 |
|
- | N-Channel | MOSFET (Metal Oxide) | 150V | 106A (Tc) | 10V | 10.7mOhm @ 20A, 10V | 5.1V @ 250µA | 60nC @ 10V | ±20V | 3010pF @ 75V | - | 277W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 43A TO-220AB |
7,488 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 43A (Tc) | 10V | 42mOhm @ 22A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 2400pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 50A D2PAK |
3,150 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 28mOhm @ 31A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 1900pF @ 25V | - | 3.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 100V 56A TO-262AA |
4,464 |
|
UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 56A (Tc) | 10V | 25mOhm @ 56A, 10V | 4V @ 250µA | 130nC @ 20V | ±20V | 2000pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA |
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|
IXYS |
MOSFET N-CH 800V 3.6A TO-263 |
4,608 |
|
PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 800V | 3.6A (Tc) | 10V | 3.4Ohm @ 500mA, 10V | 5.5V @ 100µA | 14.2nC @ 10V | ±30V | 750pF @ 25V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 1000V 800MA TO-220 |
3,078 |
|
Polar™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 800mA (Tc) | 10V | 20Ohm @ 500mA, 10V | 4V @ 50µA | 11.3nC @ 10V | ±20V | 240pF @ 25V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 1000V 1A TO-220 |
4,104 |
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Polar™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 1A (Tc) | 10V | 15Ohm @ 500mA, 10V | 4.5V @ 50µA | 15.5nC @ 10V | ±20V | 331pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 800V 1A TO-252 |
2,322 |
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Polar™ | N-Channel | MOSFET (Metal Oxide) | 800V | 1A (Tc) | 10V | 14Ohm @ 500mA, 10V | 4V @ 50µA | 9nC @ 10V | ±20V | 250pF @ 25V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 40V 200A TO263-7 |
4,140 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 200A (Tc) | 10V | 1.8mOhm @ 30A, 10V | 3.5V @ 250µA | 310nC @ 10V | ±20V | 17350pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 55V 150A TO262 |
7,920 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 150A (Tc) | 10V | 4.9mOhm @ 75A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 4780pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 40V 195A TO262 |
3,258 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 6V, 10V | 1.2mOhm @ 100A, 10V | 3.9V @ 250µA | 460nC @ 10V | ±20V | 14240pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
T6 40V SG NCH SO8FL HEFET |
3,528 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 600V 9A TO220F |
7,254 |
|
SupreMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 385mOhm @ 4.5A, 10V | 4V @ 250µA | 29nC @ 10V | ±30V | 1240pF @ 100V | - | 29.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 (Y-Forming) | TO-220-3 Full Pack, Formed Leads |
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STMicroelectronics |
MOSFET N-CH 30V 220A POWERFLAT56 |
3,510 |
|
DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 30V | 220A (Tc) | 4.5V, 10V | 1.1mOhm @ 25A, 10V | 2.2V @ 250µA | 46nC @ 4.5V | ±20V | 8650pF @ 25V | - | 113W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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Sanken |
MOSFET N-CH 40V TO-220S |
8,928 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 70A (Ta) | 10V | 6mOhm @ 35A, 10V | 4V @ 1mA | - | ±20V | 5100pF @ 10V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | TO-220S | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Sanken |
MOSFET N-CH 40V TO-220S |
8,676 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 70A (Ta) | 10V | 6mOhm @ 35A, 10V | 4V @ 1mA | - | ±20V | 5100pF @ 10V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | TO-220S | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Sanken |
MOSFET N-CH 40V TO-220S |
5,004 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 70A (Ta) | 10V | 6mOhm @ 35A, 10V | 4V @ 1mA | - | ±20V | 5100pF @ 10V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | TO-220S | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 250V 25A TO262-3 |
7,812 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 25A (Tc) | 10V | 60mOhm @ 25A, 10V | 4V @ 90µA | 29nC @ 10V | ±20V | 2350pF @ 100V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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IXYS |
MOSFET N-CH 600V 4A TO-220AB |
2,826 |
|
HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 2.2Ohm @ 2A, 10V | 5V @ 250µA | 6.9nC @ 10V | ±30V | 365pF @ 25V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 4.5A TO-220 |
2,250 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 3.9V @ 200µA | 25nC @ 10V | ±20V | 490pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 20V 14A 8-SOIC |
8,064 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 14A (Ta) | 4.5V, 10V | 4.5mOhm @ 21A, 10V | 1V @ 250µA (Min) | 32nC @ 4.5V | ±20V | - | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 16V 17A 8-SOIC |
5,886 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 16V | 17A (Ta) | 2.5V, 4.5V | 3.3mOhm @ 25A, 4.5V | 600mV @ 250µA (Min) | 70nC @ 4.5V | ±8V | - | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |