晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 518/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
MOSFET N-CH 30V POWER56 |
8,154 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 160A D2PAK |
2,754 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4.2mOhm @ 75A, 10V | 4V @ 150µA | 125nC @ 10V | ±20V | 4520pF @ 50V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
ON Semiconductor |
MOSFET N-CH 40V 46A SO8FL |
3,564 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 46A (Ta), 330A (Tc) | 4.5V, 10V | - | 2V @ 250µA | 11nC @ 4.5V | ±20V | 7700pF @ 20V | - | 3.3W (Ta), 160W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
|
|
|
Sanken |
MOSFET N-CH 60V TO-3P |
8,892 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 70A (Ta) | 10V | 6mOhm @ 35A, 10V | 4V @ 1mA | - | ±20V | 8000pF @ 10V | - | 130W (Tc) | 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 120A |
5,598 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 120A (Tc) | 10V | 4.9mOhm @ 88A, 10V | 4V @ 150µA | 230nC @ 10V | ±20V | 5360pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
|
|
|
IXYS |
MOSFET N-CHANNEL 700V 4A TO220 |
2,592 |
|
- | N-Channel | MOSFET (Metal Oxide) | 700V | 4A (Tc) | 10V | 550mOhm @ 500mA, 10V | 5V @ 250µA | 12nC @ 10V | ±30V | 800pF @ 10V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Isolated Tab | TO-220-3 Full Pack, Isolated Tab |
|
|
|
ON Semiconductor |
MOSFET N-CH 60V 120A D2PAK |
7,146 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 3.1mOhm @ 75A, 10V | 4.5V @ 250µA | 151nC @ 10V | ±20V | 9815pF @ 25V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
ON Semiconductor |
MOSFET N-CH 25V 37A SO8FL |
8,964 |
|
- | N-Channel | MOSFET (Metal Oxide) | 25V | 37A (Ta), 193A (Tc) | 4.5V, 10V | 1.4mOhm @ 30A, 10V | 2.1V @ 250µA | 38.5nC @ 10V | ±20V | 2651pF @ 12V | - | 3.13W (Ta), 83W (Tc) | 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 75V 80A TO220-3 |
4,428 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 7.4mOhm @ 80A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 4700pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
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|
Infineon Technologies |
HIGH POWER_NEW |
5,040 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
HIGH POWER_NEW |
4,230 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
IXYS |
MOSFET N-CH 1000V 2A TO-252 |
3,024 |
|
Polar™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 2A (Tc) | 10V | 7.5Ohm @ 500mA, 10V | 4.5V @ 100µA | 24.3nC @ 10V | ±20V | 655pF @ 25V | - | 86W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
IXYS |
MOSFET N-CH |
3,870 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH BARE DIE |
8,118 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Siliconix |
MOSFET N-CH 600V 21A TO220AB |
6,840 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 197mOhm @ 11A, 10V | 5V @ 250µA | 74nC @ 10V | ±30V | 1690pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 525V 12A TO-220SIS |
3,816 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 525V | 12A (Ta) | 10V | 580mOhm @ 6A, 10V | 4V @ 1mA | 25nC @ 10V | ±30V | 1350pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
STMicroelectronics |
MOSFET N-CH 650V 8.5A DPAK |
4,194 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 8.5A (Tc) | 10V | 430mOhm @ 4.3A, 10V | 5V @ 250µA | 22nC @ 10V | ±25V | 900pF @ 100V | - | 70W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 11A TO-220SIS |
5,796 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 11A (Ta) | 10V | 630mOhm @ 5.5A, 10V | 4V @ 1mA | 25nC @ 10V | ±30V | 1350pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET N-CH 75V 195A TO262 |
4,806 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 195A (Tc) | 10V | 3mOhm @ 140A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 9370pF @ 50V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
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|
IXYS |
MOSFET N-CH 150V 56A TO-263 |
7,866 |
|
TrenchHV™ | N-Channel | MOSFET (Metal Oxide) | 150V | 56A (Tc) | 10V | 36mOhm @ 28A, 10V | 4.5V @ 250µA | 34nC @ 10V | ±30V | 2250pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CHANNEL 600V 21A TO220 |
5,868 |
|
EL | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 197mOhm @ 11A, 10V | 5V @ 250µA | 74nC @ 10V | ±30V | 1690pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
|
|
|
IXYS |
MOSFET N-CH |
4,320 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 650V | 8A (Tc) | 10V | 450mOhm @ 4A, 10V | 5V @ 250µA | 11nC @ 10V | ±30V | 790pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
ON Semiconductor |
MOSFET P-CHANNEL 60V 120A ATPAK |
2,628 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 120A (Ta) | 4.5V, 10V | 6.5mOhm @ 50A, 10V | 2.6V @ 1mA | 250nC @ 10V | ±20V | 13000pF @ 20V | - | 108W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | ATPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3 |
8,370 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 5mOhm @ 80A, 10V | 2V @ 250µA | 190nC @ 10V | ±20V | 5000pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 15A TO-220 |
8,424 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 280mOhm @ 9.4A, 10V | 3.9V @ 675µA | 63nC @ 10V | ±20V | 1660pF @ 25V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
|
ON Semiconductor |
MOSFET N-CH 40V 110A |
2,322 |
|
Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 110A (Tc) | 10V | 1.2mOhm @ 80A, 10V | 3V @ 250µA | 245nC @ 10V | ±20V | 13500pF @ 20V | - | 333W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 180A TO263-7 |
2,214 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 180A (Tc) | 10V | 1.5mOhm @ 80A, 10V | 4V @ 230µA | 210nC @ 10V | ±20V | 14300pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
|
|
|
IXYS |
MOSFET N-CH 1000V 800MA TO-252 |
5,526 |
|
Polar™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 800mA (Tc) | 10V | 20Ohm @ 500mA, 10V | 4V @ 50µA | 11.3nC @ 10V | ±20V | 240pF @ 25V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
IXYS |
MOSFET N-CH 1200V 1A TO-252 |
5,868 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1200V | 1A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
IXYS |
MOSFET N-CH 500V 8A TO-220 |
3,564 |
|
HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 800mOhm @ 4A, 10V | 5V @ 1.5mA | 13nC @ 10V | ±30V | 705pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |