晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 640/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 500V 16A TO-247AC |
7,920 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 320mOhm @ 9.9A, 10V | 5V @ 250µA | 130nC @ 10V | ±30V | 2760pF @ 25V | - | 220W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 20V 36A D2PAK |
5,382 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 36A (Tc) | 4.5V, 10V | 20mOhm @ 18A, 10V | 3V @ 250µA | 9.7nC @ 4.5V | ±20V | 670pF @ 10V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 36A TO-262 |
4,014 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 36A (Tc) | 4.5V, 10V | 20mOhm @ 18A, 10V | 3V @ 250µA | 9.7nC @ 4.5V | ±20V | 670pF @ 10V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 20V 54A TO-262 |
8,928 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 54A (Tc) | 4.5V, 10V | 14mOhm @ 26A, 10V | 3V @ 250µA | 17nC @ 4.5V | ±20V | 1060pF @ 10V | - | 3.8W (Ta), 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 20V 54A D2PAK |
7,128 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 54A (Tc) | 4.5V, 10V | 14mOhm @ 26A, 10V | 3V @ 250µA | 17nC @ 4.5V | ±20V | 1060pF @ 10V | - | 3.8W (Ta), 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 30V 3.8A 6-TSOP |
3,490 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 3.8A (Ta) | 4.5V, 10V | 98mOhm @ 3.8A, 10V | 2.5V @ 250µA | 17nC @ 10V | ±20V | 511pF @ 25V | - | 2W (Ta) | - | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET P-CH 40V 3.4A 8-SOIC |
3,888 |
|
FETKY™ | P-Channel | MOSFET (Metal Oxide) | 40V | 3.4A (Ta) | 4.5V, 10V | 112mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | 1110pF @ 25V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 4.4A 6-TSOP |
6,930 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 4.4A (Ta) | 2.5V, 4.5V | 65mOhm @ 4.4A, 4.5V | 1.5V @ 250µA | 15nC @ 4.5V | ±12V | 1079pF @ 10V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 30V 61A DPAK |
4,482 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 61A (Tc) | 2.8V, 10V | 12.5mOhm @ 15A, 10V | 2V @ 250µA | 24nC @ 4.5V | ±12V | 2417pF @ 15V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 12V 10A 8-TSSOP |
4,086 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 10A (Tc) | 1.8V, 4.5V | 11mOhm @ 10A, 4.5V | 1.2V @ 250µA | 100nC @ 4.5V | ±8V | 5050pF @ 10V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Vishay Siliconix |
MOSFET N-CH 250V 14A D2PAK |
4,266 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 14A (Tc) | 10V | 240mOhm @ 8.4A, 10V | 4V @ 250µA | 54nC @ 10V | ±20V | 1060pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 13.3A 8-SOIC |
6,300 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13.3A (Ta) | 4.5V | 9mOhm @ 15A, 4.5V | 1V @ 250µA | 62nC @ 5V | ±12V | 3780pF @ 16V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 15A 8-SOIC |
6,462 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 15A (Ta) | 2.5V, 4.5V | 8.2mOhm @ 15A, 4.5V | 1.2V @ 250µA | 130nC @ 4.5V | ±12V | 7980pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 60V 50A TO-220AB |
7,056 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 28mOhm @ 31A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 1900pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 40V 4.6A 8-TSSOP |
7,092 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 4.6A (Ta) | 4.5V, 10V | 46mOhm @ 4.6A, 10V | 3V @ 250µA | 38nC @ 4.5V | ±20V | 3150pF @ 25V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Infineon Technologies |
MOSFET P-CH 60V 5.1A I-PAK |
6,588 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 5.1A (Tc) | 10V | 500mOhm @ 3.1A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 270pF @ 25V | - | 2.5W (Ta), 25W (Tc) | - | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET P-CH 12V 11.5A 8-SOIC |
3,312 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 11.5A (Tc) | 1.8V, 4.5V | 14mOhm @ 11.5A, 4.5V | 900mV @ 250µA | 38nC @ 4.5V | ±8V | 3529pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 200V 2.5A 8-SOIC |
6,678 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 2.5A (Ta) | 10V | 170mOhm @ 1.5A, 10V | 5.5V @ 250µA | 39nC @ 10V | ±30V | 940pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 12V 8.9A 8-SOIC |
5,688 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 8.9A (Ta) | 1.8V, 4.5V | 24mOhm @ 8.7A, 4.5V | 900mV @ 250µA | 20nC @ 4.5V | ±8V | 1877pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 8A 8-TSSOP |
8,928 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 8A (Tc) | 4.5V, 10V | 18mOhm @ 8A, 10V | 2.5V @ 250µA | 88nC @ 10V | ±20V | 2774pF @ 25V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 13A 8-SOIC |
3,582 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V | 11mOhm @ 7A, 4.5V | 3V @ 250µA | 31nC @ 5V | ±12V | - | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 7A 8-TSSOP |
7,920 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 7A (Ta) | 2.5V, 4.5V | 22mOhm @ 7A, 4.5V | 1.2V @ 250µA | 47nC @ 4.5V | ±12V | 2361pF @ 15V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Infineon Technologies |
MOSFET P-CH 40V 6A 8-TSSOP |
4,194 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 6A (Ta) | 4.5V, 10V | 28mOhm @ 6A, 10V | 3V @ 250µA | 62nC @ 4.5V | ±20V | 5220pF @ 25V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Infineon Technologies |
MOSFET N-CH 75V 42A I-PAK |
6,336 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 42A (Tc) | 10V | 26mOhm @ 25A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 2400pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 60V 72A D2PAK |
4,482 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 72A (Tc) | 10V | 12mOhm @ 43A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 1985pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 1.9A 8-SOIC |
4,248 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 1.9A (Ta) | 10V | 280mOhm @ 1.14A, 10V | 5.5V @ 250µA | 15nC @ 10V | ±30V | 330pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 250V 2.2A 8-SOIC |
8,604 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 2.2A (Ta) | 10V | 230mOhm @ 1.3A, 10V | 5.5V @ 250µA | 38nC @ 10V | ±30V | 930pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 14A 8-SOIC |
5,508 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 8.5mOhm @ 14A, 10V | 2.5V @ 250µA | 38nC @ 4.5V | ±20V | 2710pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 250V 14A TO-220AB |
4,896 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 14A (Tc) | 10V | 240mOhm @ 8.4A, 10V | 4V @ 250µA | 54nC @ 10V | ±20V | 1060pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 90A I-PAK |
7,362 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 41nC @ 4.5V | ±20V | 2672pF @ 16V | - | 120W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |