晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 637/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 60V 50A D2PAK |
6,192 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4V, 5V | 28mOhm @ 31A, 5V | 2V @ 250µA | 66nC @ 5V | ±10V | 3300pF @ 25V | - | 3.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 12.5A 8-SOIC |
6,156 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12.5A (Ta) | 4.5V, 10V | 9mOhm @ 12.5A, 10V | 1V @ 250µA | 78nC @ 10V | ±20V | 2240pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
MOSFET N-CH 20V 2.4A MICRO8 |
7,938 |
|
FETKY™ | N-Channel | MOSFET (Metal Oxide) | 20V | 2.4A (Ta) | 2.7V, 4.5V | 135mOhm @ 1.7A, 4.5V | 700mV @ 250µA | 8nC @ 4.5V | ±12V | 260pF @ 15V | Schottky Diode (Isolated) | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
|
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Infineon Technologies |
MOSFET N-CH 30V 2.7A MICRO8 |
4,284 |
|
FETKY™ | N-Channel | MOSFET (Metal Oxide) | 30V | 2.7A (Ta) | 4.5V, 10V | 130mOhm @ 1.7A, 10V | 1V @ 250µA | 12nC @ 10V | ±20V | 210pF @ 25V | Schottky Diode (Isolated) | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
|
|
|
Infineon Technologies |
MOSFET P-CH 30V 2A MICRO8 |
7,272 |
|
FETKY™ | P-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4.5V, 10V | 200mOhm @ 1.2A, 10V | 1V @ 250µA | 11nC @ 10V | ±20V | 180pF @ 25V | Schottky Diode (Isolated) | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
|
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|
Diodes Incorporated |
MOSFET N-CH 100V 200MA TO92-3 |
6,174 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 200mA (Ta) | 10V | 10Ohm @ 500mA, 10V | 2.4V @ 1mA | - | ±20V | 40pF @ 25V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
|
|
|
Diodes Incorporated |
MOSFET N-CH 60V 0.25A SOT23-3 |
3,888 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 250mA (Ta) | 10V | 5Ohm @ 200mA, 10V | 3V @ 250µA | - | ±20V | 50pF @ 10V | - | 300mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Diodes Incorporated |
MOSFET N-CH 50V 200MA SOT23-3 |
2,520 |
|
- | N-Channel | MOSFET (Metal Oxide) | 50V | 200mA (Ta) | 10V | 3.5Ohm @ 220mA, 10V | 1.5V @ 250µA | - | ±20V | 50pF @ 10V | - | 300mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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|
Diodes Incorporated |
MOSFET P-CH 50V 130MA SOT23-3 |
4,392 |
|
- | P-Channel | MOSFET (Metal Oxide) | 50V | 130mA (Ta) | 5V | 10Ohm @ 100mA, 5V | 2V @ 1mA | - | ±20V | 45pF @ 25V | - | 300mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Diodes Incorporated |
MOSFET N-CH 60V 500MA SOT23-3 |
6,786 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 500mA (Ta) | 4.5V, 10V | 5Ohm @ 200mA, 10V | 3V @ 250µA | - | ±20V | 40pF @ 10V | - | 300mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 200V 5A DPAK |
5,994 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 5A (Tc) | 10V | 600mOhm @ 2.9A, 10V | 4V @ 250µA | 23nC @ 10V | ±20V | 300pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 200V 5A DPAK |
4,302 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 5A (Tc) | 10V | 600mOhm @ 2.9A, 10V | 4V @ 250µA | 23nC @ 10V | ±20V | 300pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Diodes Incorporated |
MOSFET N-CH 60V 600MA TO92-3 |
2,322 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 600mA (Ta) | 5V, 10V | 1Ohm @ 1.5A, 10V | 3V @ 1mA | - | ±20V | 100pF @ 25V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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|
ON Semiconductor |
MOSFET N-CH 100V 50A TO-220AB |
5,562 |
|
UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 51A (Tc) | - | 26mOhm @ 51A, 10V | 3V @ 250µA | 86nC @ 10V | - | 2400pF @ 25V | - | - | - | Through Hole | TO-220-3 | TO-220-3 |
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Diodes Incorporated |
MOSFET N-CH 20V 9A 8-SOIC |
8,802 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 9A (Ta) | 2.5V, 4.5V | 15mOhm @ 4.1A, 4.5V | 700mV @ 250µA | - | ±12V | - | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET N-CH 30V 9A 8-SOIC |
4,050 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 15mOhm @ 7.3A, 10V | 1V @ 250µA | - | ±20V | - | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
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Diodes Incorporated |
MOSFET P-CH 20V 8A 8-SOIC |
5,094 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 6.4A (Ta) | 2.5V, 4.5V | 25mOhm @ 3.2A, 4.5V | 700mV @ 250µA | 43.3nC @ 4.5V | ±12V | 2068pF @ 15V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
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Diodes Incorporated |
MOSFET P-CH 30V 7.9A 8-SOIC |
4,590 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 6.25A (Ta) | 4.5V, 10V | 25mOhm @ 5.6A, 10V | 1V @ 250µA | 36nC @ 5V | ±20V | 1979pF @ 25V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
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Diodes Incorporated |
MOSFET N-CH 20V 12A 8-SOIC |
8,280 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Diodes Incorporated |
MOSFET N-CH 30V 12A 8-SOIC |
8,838 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Diodes Incorporated |
MOSFET N-CH 60V 7.6A 8-SOIC |
3,384 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
MOSFET N-CH 200V 5A I-PAK |
6,264 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 5A (Tc) | 10V | 600mOhm @ 2.9A, 10V | 4V @ 250µA | 23nC @ 10V | ±20V | 300pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
IXYS |
MOSFET N-CH 300V 130A SOT-227B |
4,896 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 130A (Tc) | 10V | 22mOhm @ 500mA, 10V | 4V @ 8mA | 380nC @ 10V | ±20V | 14500pF @ 25V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
|
|
|
Vishay Siliconix |
MOSFET N-CH 500V 16A TO-220AB |
3,942 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 320mOhm @ 9.9A, 10V | 5V @ 250µA | 130nC @ 10V | ±30V | 2760pF @ 25V | - | 220W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 20V 6.5A 6-TSOP |
7,344 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 6.5A (Ta) | 2.5V, 4.5V | 30mOhm @ 6.5A, 4.5V | 1.2V @ 250µA | 22nC @ 5V | ±12V | 1310pF @ 15V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(SOT23-6) | SOT-23-6 |
|
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|
IXYS |
MOSFET N-CH 1.1KV 13A TO-247AD |
3,418 |
|
MegaMOS™ | N-Channel | MOSFET (Metal Oxide) | 1100V | 13A (Tc) | 10V | 920mOhm @ 500mA, 10V | 4.5V @ 250µA | 195nC @ 10V | ±20V | 5650pF @ 25V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
|
|
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Infineon Technologies |
MOSFET N-CH 500V 19A TO-254AA |
391 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 19A (Tc) | 10V | 270mOhm @ 12A, 10V | 4V @ 250µA | 190nC @ 10V | ±20V | 4300pF @ 25V | - | 250W (Tc) | - | Through Hole | TO-254AA | TO-254-3, TO-254AA (Straight Leads) |
|
|
|
ON Semiconductor |
MOSFET P-CH 250V 5A TO-220 |
2,826 |
|
- | P-Channel | MOSFET (Metal Oxide) | 250V | 5A (Tc) | 10V | 1.3Ohm @ 2.5A, 10V | 4V @ 250µA | 37nC @ 10V | ±30V | 975pF @ 25V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
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|
ON Semiconductor |
MOSFET N-CH 500V 22A TO-3P |
8,334 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 250mOhm @ 11A, 10V | 4V @ 250µA | 236nC @ 10V | ±30V | 5120pF @ 25V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
|
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|
IXYS |
MOSFET N-CH 70V 180A PLUS247 |
5,058 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 70V | 180A (Tc) | 10V | 6mOhm @ 500mA, 10V | 4V @ 8mA | 420nC @ 10V | ±20V | 9400pF @ 25V | - | 568W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |