晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 819/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 600V 6.1A TO-262 |
3,436 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 6.1A (Tc) | 10V | 600mOhm @ 3.3A, 10V | 3.5V @ 220µA | 27nC @ 10V | ±20V | 550pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO262-3 |
2,448 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 6.5mOhm @ 70A, 10V | 4V @ 50µA | 40nC @ 10V | ±20V | 2700pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 100V 13A TO262-3 |
7,110 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 13A (Tc) | 10V | 80mOhm @ 13A, 10V | 4V @ 12µA | 11nC @ 10V | ±20V | 716pF @ 50V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
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|
Infineon Technologies |
MOSFET N-CH 30V 80A TO262-3 |
3,024 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 2.7mOhm @ 80A, 10V | 2.2V @ 90µA | 140nC @ 10V | ±16V | 9750pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
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|
Infineon Technologies |
MOSFET N-CH 30V 80A TO262-3 |
5,940 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 3.7mOhm @ 80A, 10V | 2.2V @ 45µA | 75nC @ 10V | ±16V | 5100pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
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Infineon Technologies |
MOSFET N-CH 40V 80A TO262-3 |
6,966 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 3.7mOhm @ 80A, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | 5300pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
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Infineon Technologies |
MOSFET N-CH 40V 80A TO262-3 |
6,588 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4mOhm @ 80A, 10V | 4V @ 250µA | 148nC @ 10V | ±20V | 4400pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
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Infineon Technologies |
MOSFET N-CH 40V 80A TO262-3 |
3,366 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4.1mOhm @ 80A, 10V | 4V @ 90µA | 80nC @ 10V | ±20V | 5200pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
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Infineon Technologies |
MOSFET N-CH 40V 80A TO262-3 |
3,400 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 5.7mOhm @ 80A, 10V | 4V @ 52µA | 47nC @ 10V | ±20V | 3250pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 80A TO262-3 |
3,366 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 6.6mOhm @ 68A, 10V | 4V @ 180µA | 110nC @ 10V | ±20V | 3400pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
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Infineon Technologies |
MOSFET N-CH 55V 80A TO262-3 |
2,412 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 8mOhm @ 58A, 10V | 4V @ 150µA | 96nC @ 10V | ±20V | 2860pF @ 25V | - | 215W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
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Infineon Technologies |
MOSFET N-CH 55V 80A TO262-3 |
7,164 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 4.8mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | ±20V | 5700pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
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Infineon Technologies |
MOSFET N-CH 55V 80A TO262-3 |
3,490 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 11mOhm @ 60A, 10V | 2V @ 93µA | 80nC @ 10V | ±20V | 2075pF @ 25V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 900V 5.7A TO-262 |
6,678 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 5.7A (Tc) | 10V | 1Ohm @ 3.3A, 10V | 3.5V @ 370µA | 34nC @ 10V | ±20V | 850pF @ 100V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 900V 6.9A TO-262 |
3,996 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 6.9A (Tc) | 10V | 800mOhm @ 4.1A, 10V | 3.5V @ 460µA | 42nC @ 10V | ±20V | 1100pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 100V 100A TO220-3 |
2,466 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 4.5V, 10V | 5.1mOhm @ 100A, 10V | 2.4V @ 250µA | 163nC @ 10V | ±20V | 15600pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 100A TO220-3 |
6,660 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 4.5V, 10V | 6.2mOhm @ 100A, 10V | 2.4V @ 180µA | 124nC @ 10V | ±20V | 11900pF @ 50V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 80V 80A TO220-3 |
4,626 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 80A (Tc) | 6V, 10V | 7mOhm @ 73A, 10V | 3.5V @ 73µA | 56nC @ 10V | ±20V | 3840pF @ 40V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO220-3 |
5,364 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 8mOhm @ 30A, 10V | 2.2V @ 250µA | 18nC @ 10V | ±20V | 1900pF @ 15V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 98A TO220-3 |
4,806 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 98A (Tc) | 4.5V, 10V | 8mOhm @ 98A, 10V | 2.4V @ 130µA | 90nC @ 10V | ±20V | 8610pF @ 50V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 100A TO220-3 |
2,970 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 3.6mOhm @ 80A, 10V | 4V @ 250µA | 172nC @ 10V | ±20V | 5300pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 100A TO220-3 |
3,456 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 3.3mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | ±20V | 6000pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 100A TO220-3 |
6,930 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 100A (Tc) | 10V | 5mOhm @ 80A, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | 5110pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 100A TO220-3 |
5,346 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 100A (Tc) | 4.5V, 10V | 4.7mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | ±20V | 5660pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 30V 100A TO220-3 |
5,202 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 4.3mOhm @ 80A, 10V | 2.1V @ 475µA | 200nC @ 10V | +5V, -16V | 9300pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 80V 45A TO220-3 |
3,726 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 45A (Tc) | 6V, 10V | 13.9mOhm @ 45A, 10V | 3.5V @ 33µA | 25nC @ 10V | ±20V | 1730pF @ 40V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 54A TO220-3 |
2,100 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 54A (Tc) | 10V | 15.7mOhm @ 54A, 10V | 2.4V @ 61µA | 44nC @ 10V | ±20V | 4190pF @ 50V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 22A TO220-3 |
8,658 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Tc) | 4.5V, 10V | 14.9mOhm @ 22A, 10V | 2.2V @ 10µA | 14nC @ 10V | ±16V | 980pF @ 25V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 30A TO220-3 |
8,388 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 4.5V, 10V | 23mOhm @ 30A, 10V | 2.2V @ 11µA | 10nC @ 4.5V | ±20V | 1600pF @ 30V | - | 36W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 27A TO220-3 |
3,114 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 27A (Tc) | 10V | 26mOhm @ 27A, 10V | 4V @ 11µA | 15nC @ 10V | ±20V | 1200pF @ 30V | - | 36W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |