晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 820/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 100V 27A TO220-3 |
5,958 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 27A (Tc) | 10V | 35mOhm @ 27A, 10V | 4V @ 29µA | 24nC @ 10V | ±20V | 1570pF @ 50V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 47A TO220-3 |
6,120 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 47A (Tc) | 10V | 33mOhm @ 33A, 10V | 4V @ 2mA | 105nC @ 10V | ±20V | 2500pF @ 25V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 47A TO220-3 |
7,578 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 47A (Tc) | 4.5V, 10V | 26mOhm @ 33A, 10V | 2V @ 2mA | 135nC @ 10V | ±20V | 2500pF @ 25V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
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Infineon Technologies |
MOSFET N-CH 500V 13A TO-220 |
7,290 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 13A (Tc) | 10V | 250mOhm @ 7.8A, 10V | 3.5V @ 520µA | 36nC @ 10V | ±20V | 1420pF @ 100V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
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Infineon Technologies |
MOSFET N-CH 550V 7.1A TO-220 |
8,316 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 550V | 7.1A (Tc) | 10V | 520mOhm @ 3.8A, 10V | 3.5V @ 250µA | 17nC @ 10V | ±20V | 680pF @ 100V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
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Infineon Technologies |
MOSFET N-CH 650V 6.8A TO-220 |
8,478 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 6.8A (Tc) | 10V | 520mOhm @ 3.8A, 10V | 3.5V @ 340µA | 31nC @ 10V | ±20V | 630pF @ 100V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
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Infineon Technologies |
MOSFET N-CH 600V 6.1A TO-220 |
4,590 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 6.1A (Tc) | 10V | 600mOhm @ 3.3A, 10V | 3.5V @ 220µA | 27nC @ 10V | ±20V | 550pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO220-3 |
4,608 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 6.5mOhm @ 70A, 10V | 4V @ 50µA | 40nC @ 10V | ±20V | 2700pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
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Infineon Technologies |
MOSFET N-CH 55V 77A TO220-3 |
2,520 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 77A (Tc) | 10V | 12mOhm @ 38A, 10V | 4V @ 93µA | 60nC @ 10V | ±20V | 1770pF @ 25V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 80A TO220-3 |
7,200 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 3.7mOhm @ 80A, 10V | 2.2V @ 45µA | 75nC @ 10V | ±16V | 5100pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO220-3 |
3,564 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 3.7mOhm @ 80A, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | 5300pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
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Infineon Technologies |
MOSFET N-CH 40V 80A TO220-3 |
2,484 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4mOhm @ 80A, 10V | 4V @ 250µA | 148nC @ 10V | ±20V | 4400pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
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Infineon Technologies |
MOSFET N-CH 40V 80A TO220-3 |
8,280 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 3.4mOhm @ 80A, 10V | 2V @ 250µA | 213nC @ 10V | ±20V | 6000pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
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Infineon Technologies |
MOSFET N-CH 40V 80A TO220-3 |
6,930 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 3.5mOhm @ 80A, 10V | 4V @ 120µA | 110nC @ 10V | ±20V | 7300pF @ 25V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO220-3 |
2,664 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4.1mOhm @ 80A, 10V | 4V @ 90µA | 80nC @ 10V | ±20V | 5200pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO220-3 |
7,128 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 5.7mOhm @ 80A, 10V | 4V @ 52µA | 47nC @ 10V | ±20V | 3250pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3 |
2,304 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 5.1mOhm @ 80A, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | 5110pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3 |
8,676 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 6.6mOhm @ 68A, 10V | 4V @ 180µA | 110nC @ 10V | ±20V | 3400pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
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Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3 |
2,070 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 8mOhm @ 58A, 10V | 4V @ 150µA | 96nC @ 10V | ±20V | 2860pF @ 25V | - | 215W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3 |
2,952 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 9.1mOhm @ 50A, 10V | 4V @ 125µA | 80nC @ 10V | ±20V | 2360pF @ 25V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3 |
7,092 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 5.5mOhm @ 80A, 10V | 4V @ 230µA | 155nC @ 10V | ±20V | 4400pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3 |
5,706 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 4.8mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | ±20V | 5700pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
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Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3 |
3,672 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 6.3mOhm @ 69A, 10V | 2V @ 180µA | 150nC @ 10V | ±20V | 3800pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3 |
6,642 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 7mOhm @ 60A, 10V | 2V @ 150µA | 130nC @ 10V | ±20V | 3160pF @ 25V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
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Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3 |
6,066 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 8.5mOhm @ 52A, 10V | 2V @ 125µA | 105nC @ 10V | ±20V | 2620pF @ 25V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3 |
2,304 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 11mOhm @ 60A, 10V | 2V @ 93µA | 80nC @ 10V | ±20V | 2075pF @ 25V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
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Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3 |
7,056 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 5mOhm @ 80A, 10V | 2V @ 250µA | 190nC @ 10V | ±20V | 5000pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
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Infineon Technologies |
MOSFET N-CH 900V 11A TO-220 |
4,392 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 3.5V @ 740µA | 68nC @ 10V | ±20V | 1700pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO251-3-11 |
3,726 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 7.5mOhm @ 30A, 10V | 2.2V @ 250µA | 18nC @ 10V | ±20V | 1900pF @ 15V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
|
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Infineon Technologies |
MOSFET N-CH 100V 69A TO251-3-11 |
3,006 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 69A (Tc) | 4.5V, 10V | 11.8mOhm @ 69A, 10V | 2.4V @ 83µA | 58nC @ 10V | ±20V | 5600pF @ 50V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |