晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 843/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 25V 81A IPAK |
6,282 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 81A (Tc) | 4.5V, 10V | 5.7mOhm @ 25A, 10V | 2.35V @ 25µA | 15nC @ 4.5V | ±20V | 1470pF @ 13V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 25V 57A IPAK |
2,646 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 57A (Tc) | 4.5V, 10V | 8.7mOhm @ 21A, 10V | 2.35V @ 25µA | 10nC @ 4.5V | ±20V | 900pF @ 13V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
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|
Diodes Incorporated |
MOSFET N-CH 30V 11A 8SO |
7,614 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 11.9mOhm @ 11A, 10V | 2.5V @ 250µA | 30.6nC @ 10V | ±12V | 1276pF @ 15V | Schottky Diode (Body) | 1.55W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 250V 4A SOT-428 |
5,310 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 4A (Ta) | 10V | - | - | - | ±30V | - | - | 20W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Rohm Semiconductor |
MOSFET P-CH 12V 9A MPT6 |
2,628 |
|
- | P-Channel | MOSFET (Metal Oxide) | 12V | 9A (Ta) | 1.5V, 4.5V | 12mOhm @ 9A, 4.5V | 1V @ 1mA | 59nC @ 4.5V | ±10V | 7400pF @ 6V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | MPT6 | 6-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET P-CH 30V 10A MPT6 |
4,752 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 10V | 12.6mOhm @ 10A, 10V | 2.5V @ 1mA | 39nC @ 5V | ±20V | 3600pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | MPT6 | 6-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET P-CH 30V 5A SOP8 |
8,550 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4V, 10V | 50mOhm @ 5A, 10V | 2.5V @ 1mA | 9.2nC @ 5V | ±20V | 850pF @ 10V | - | 650mW (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 250V 3.8A PQFN |
2,430 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 3.8A (Ta) | 10V | 100mOhm @ 5.7A, 10V | 5V @ 150µA | 56nC @ 10V | ±20V | 2150pF @ 50V | - | 3.6W (Ta), 8.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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ON Semiconductor |
MOSFET P-CH 60V 5A DPAK |
7,254 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 5A (Tc) | 10V | 450mOhm @ 2.5A, 10V | 4V @ 250µA | 20nC @ 10V | ±15V | 510pF @ 25V | - | 2.1W (Ta), 40W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 150V 5A DPAK |
4,464 |
|
- | N-Channel | MOSFET (Metal Oxide) | 150V | 6A (Tc) | 10V | 300mOhm @ 3A, 10V | 4.5V @ 1mA | 30nC @ 10V | ±20V | 1200pF @ 25V | - | 1.25W (Ta), 20W (Tc) | -65°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 500V 2.6A IPAK |
3,454 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.6A (Tc) | 10V | 3.3Ohm @ 1.15A, 10V | 4.5V @ 50µA | 10nC @ 10V | ±30V | 274pF @ 25V | - | 58W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
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|
ON Semiconductor |
MOSFET N-CH 500V 3A IPAK |
3,006 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 3A (Tc) | 10V | 2.7Ohm @ 1.5A, 10V | 4.5V @ 50µA | 12nC @ 10V | ±30V | 308pF @ 25V | - | 61W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
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ON Semiconductor |
MOSFET N-CH 600V 2.4A TO220FP |
3,780 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 2.4A (Tc) | 10V | 4.8Ohm @ 1A, 10V | 4.5V @ 50µA | 10.1nC @ 10V | ±30V | 274pF @ 25V | - | 24W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 600V 3.1A TO220FP |
7,074 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 3.1A (Tc) | 10V | 3.6Ohm @ 1.2A, 10V | 4.5V @ 50µA | 18nC @ 10V | ±30V | 372pF @ 25V | - | 27W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 620V 4.4A TO220FP |
3,870 |
|
- | N-Channel | MOSFET (Metal Oxide) | 620V | 4.4A (Tc) | 10V | 2Ohm @ 2A, 10V | 4.5V @ 50µA | 19nC @ 10V | ±30V | 535pF @ 25V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 620V 6A TO220FP |
3,078 |
|
- | N-Channel | MOSFET (Metal Oxide) | 620V | 6A (Tc) | 10V | 1.2Ohm @ 3A, 10V | 4.5V @ 100µA | 32nC @ 10V | ±30V | 923pF @ 25V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 600V 7.5A TO220FP |
5,472 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 8.4A (Tc) | 10V | 950mOhm @ 3.5A, 10V | 4.5V @ 100µA | 39nC @ 10V | ±30V | 1140pF @ 25V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 620V 10A TO220FP |
6,822 |
|
- | N-Channel | MOSFET (Metal Oxide) | 620V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 4.5V @ 100µA | 47nC @ 10V | ±30V | 1425pF @ 25V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 500V 12A TO-220FP |
5,598 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 520mOhm @ 4.5A, 10V | 4.5V @ 100µA | 69nC @ 10V | ±30V | 1645pF @ 25V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 60V 43A DPAK |
2,808 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 43A (Tc) | 10V | 18mOhm @ 20A, 10V | 4V @ 250µA | 23nC @ 10V | ±20V | 1261pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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ON Semiconductor |
MOSFET N-CH 60V 46A IPAK |
5,652 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 46A (Tc) | 4.5V, 10V | 16mOhm @ 20A, 10V | 2V @ 250µA | 29nC @ 10V | ±20V | 1400pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 60V 20A IPAK |
2,556 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 20A (Tc) | 4.5V, 10V | 39mOhm @ 10A, 10V | 2.5V @ 250µA | 15nC @ 10V | ±20V | 675pF @ 25V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
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ON Semiconductor |
MOSFET N-CH 30V 15A ICEPAK |
3,528 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta), 66A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 2.4V @ 250µA | 25nC @ 10V | ±20V | 1644pF @ 15V | - | 2.2W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 4-ICEPAK - B1 PAD (4.8x3.8) | 4-ICEPAK |
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ON Semiconductor |
MOSFET N-CH 25V 129A ICEPAK |
8,262 |
|
- | N-Channel | MOSFET (Metal Oxide) | 25V | 26.7A (Ta), 151A (Tc) | 4.5V, 10V | 2.6mOhm @ 29A, 10V | 2.4V @ 250µA | 66nC @ 10V | ±20V | 4360pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 4-ICEPAK - E1 PAD (6.3x4.9) | 5-ICEPAK |
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ON Semiconductor |
MOSFET N-CH 30V 126A ICEPAK |
4,734 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 26A (Ta), 148A (Tc) | 4.5V, 10V | 2.6mOhm @ 24A, 10V | 2.4V @ 250µA | 61nC @ 10V | ±20V | 4270pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 4-ICEPAK - E1 PAD (6.3x4.9) | 5-ICEPAK |
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ON Semiconductor |
MOSFET N-CH 40V 53.6A 8DFN |
7,938 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 17A (Ta), 53A (Tc) | 4.5V, 10V | 6.4mOhm @ 20A, 10V | 2.2V @ 250µA | 31nC @ 10V | ±20V | 1570pF @ 25V | - | 2.7W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
|
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ON Semiconductor |
MOSFET N-CH 60V 37A 8DFN |
6,246 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 11A (Ta), 37A (Tc) | 4.5V, 10V | 11.5mOhm @ 8.7A, 10V | 2.3V @ 250µA | 28nC @ 10V | ±20V | 1462pF @ 25V | - | 2.7W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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IXYS |
MOSFET N-CH 4000V 1A ISOPLUS I4 |
8,280 |
|
- | N-Channel | MOSFET (Metal Oxide) | 4000V | 1A (Tc) | 10V | 60Ohm @ 500mA, 10V | 4V @ 250µA | 78nC @ 10V | ±20V | 2530pF @ 25V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS i4-PAC™ | i4-Pac™-5 (3 Leads) |
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ON Semiconductor |
MOSFET N-CH 30V 11.1A IPAK |
8,262 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 8.9A (Ta), 55A (Tc) | 4.5V, 10V | 8mOhm @ 30A, 10V | 2.5V @ 250µA | 22nC @ 10V | ±20V | 1300pF @ 15V | - | 1.07W (Ta), 35.71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 30V 11.1A IPAK |
8,370 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 8.9A (Ta), 55A (Tc) | 4.5V, 10V | 8mOhm @ 30A, 10V | 2.5V @ 250µA | 22nC @ 10V | ±20V | 1300pF @ 15V | - | 1.07W (Ta), 35.71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |