晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 844/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
MOSFET N-CH 600V DPAK |
7,614 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 2.2A (Tc) | 10V | 4.8Ohm @ 1A, 10V | 4.5V @ 50µA | 16nC @ 10V | ±30V | 325pF @ 25V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 500V 2.6A DPAK |
8,910 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.6A (Tc) | 10V | 3.3Ohm @ 1.15A, 10V | 4.5V @ 50µA | 16nC @ 10V | ±30V | 329pF @ 25V | - | 58W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 600V DPAK |
2,160 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 2.6A (Tc) | 10V | 3.6Ohm @ 1.2A, 10V | 4.5V @ 50µA | 12nC @ 10V | ±30V | 312pF @ 25V | - | 61W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
ON Semiconductor |
MOSFET N-CH 500V 3A DPAK |
5,868 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 3A (Tc) | 10V | 2.7Ohm @ 1.5A, 10V | 4.5V @ 50µA | 12nC @ 10V | ±30V | 308pF @ 25V | - | 61W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
ON Semiconductor |
MOSFET N-CH 500V 5A DPAK |
7,164 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 4.7A (Tc) | 10V | 1.5Ohm @ 2.2A, 10V | 4.5V @ 50µA | 18.5nC @ 10V | ±30V | 530pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
ON Semiconductor |
MOSFET N-CH 100V 72A D2PAK |
5,274 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 77A (Tc) | 10V | 14mOhm @ 72A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 3700pF @ 25V | - | 217W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
ON Semiconductor |
MOSFET N-CH 100V 58A D2PAK |
2,034 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 58A (Tc) | 10V | 18.2mOhm @ 58A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 3500pF @ 25V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
ON Semiconductor |
MOSFET N-CH 30V 11.1A DPAK |
2,556 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 8.9A (Ta), 55A (Tc) | 4.5V, 10V | 8mOhm @ 30A, 10V | 2.5V @ 250µA | 22nC @ 10V | ±20V | 1300pF @ 15V | - | 1.07W (Ta), 35.71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
ON Semiconductor |
MOSFET N-CH 30V 8.1A DPAK |
4,212 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 8.1A (Ta), 44A (Tc) | 4.5V, 10V | 9.6mOhm @ 30A, 10V | 2.5V @ 250µA | 16.2nC @ 10V | ±20V | 1035pF @ 12V | - | 1.1W (Ta), 35.7W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
ON Semiconductor |
MOSFET N-CH 60V 43A DPAK |
7,776 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 43A (Tc) | 10V | 18mOhm @ 20A, 10V | 4V @ 250µA | 23nC @ 10V | ±20V | 1261pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
ON Semiconductor |
MOSFET N-CH 100V 23A DPAK |
6,786 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 23A (Tc) | 10V | 55mOhm @ 23A, 10V | 4V @ 250µA | 29nC @ 10V | ±20V | 700pF @ 25V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
ON Semiconductor |
MOSFET N-CH 30V SO-8FL |
3,726 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 13.2A (Ta), 117A (Tc) | 4.5V, 10V | 3mOhm @ 30A, 10V | 2.5V @ 1mA | 49.5nC @ 10V | ±20V | 3233pF @ 12V | - | 930mW (Ta), 73.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
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|
ON Semiconductor |
MOSFET N-CH 30V 5A 8WDFN |
4,896 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 5A (Ta), 32A (Tc) | 4.5V, 11.5V | 20mOhm @ 20A, 10V | 3V @ 250µA | 16.6nC @ 10V | ±20V | 964pF @ 15V | - | 860mW (Ta), 33.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 30V 4.6A 8WDFN |
4,212 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 4.6A (Ta), 26A (Tc) | 4.5V, 11.5V | 24mOhm @ 20A, 10V | 3V @ 250µA | 10.8nC @ 10V | ±20V | 580pF @ 15V | - | 840mW (Ta), 27.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
|
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|
ON Semiconductor |
MOSFET N-CH 40V 53.6A 8DFN |
3,400 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 17A (Ta), 53A (Tc) | 4.5V, 10V | 6.4mOhm @ 20A, 10V | 2.2V @ 250µA | 31nC @ 10V | ±20V | 1570pF @ 25V | - | 2.7W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
|
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|
ON Semiconductor |
MOSFET N-CH 30V POWER56 |
6,120 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta) | - | 3mOhm @ 21A, 10V | 3V @ 1mA | 66nC @ 10V | - | 4225pF @ 15V | - | 2.5W (Ta), 65W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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|
Vishay Siliconix |
MOSFET P-CH 12V 0.87A SC89 |
5,400 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 870mA (Ta) | 1.8V, 4.5V | 165mOhm @ 870mA, 4.5V | 450mV @ 250µA (Min) | 6nC @ 4.5V | ±8V | - | - | 170mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-6 | SOT-563, SOT-666 |
|
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|
Renesas Electronics America |
MOSFET N-CH 30V 60A LFPAK |
4,068 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Ta) | 4.5V, 10V | 2.1mOhm @ 30A, 10V | 2.5V @ 1mA | 42nC @ 4.5V | ±20V | 6380pF @ 10V | - | 65W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
|
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|
Renesas Electronics America |
MOSFET N-CH 30V 35A LFPAK |
2,790 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Ta) | 4.5V, 10V | 4.7mOhm @ 17.5A, 10V | 2.5V @ 1mA | 14nC @ 4.5V | ±20V | 2180pF @ 10V | - | 45W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
|
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Infineon Technologies |
MOSFET N-CH 20V 4.2A 8-SOIC |
5,652 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | 2.7V, 4.5V | 85mOhm @ 4A, 4.5V | 700mV @ 250µA | 7.5nC @ 4.5V | ±12V | 310pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
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Infineon Technologies |
MOSFET N-CH 30V 59A D2PAK |
5,814 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 59A (Tc) | 4.5V, 10V | 9.5mOhm @ 21A, 10V | 2.25V @ 25µA | 15nC @ 4.5V | ±20V | 1210pF @ 15V | - | 57W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET P-CH 30V 4A 6-TSOP |
6,300 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta) | 4.5V, 10V | 85mOhm @ 4A, 10V | 1V @ 250µA | 17nC @ 10V | ±20V | 535pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 Thin, TSOT-23-6 |
|
|
|
Infineon Technologies |
MOSFET P-CH 40V 3.4A 8-SOIC |
4,878 |
|
FETKY™ | P-Channel | MOSFET (Metal Oxide) | 40V | 3.4A (Ta) | 4.5V, 10V | 112mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | 1110pF @ 25V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
MOSFET P-CH 40V 2.5A 6-TSOP |
7,146 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 2.5A (Ta) | 4.5V, 10V | 198mOhm @ 2.5A, 10V | 3V @ 250µA | 8.5nC @ 10V | ±20V | 680pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 Thin, TSOT-23-6 |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 12.7A DIRECTFET |
8,136 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 12.7A (Ta), 55A (Tc) | 4.5V, 10V | 8.3mOhm @ 12.7A, 10V | 2.25V @ 250µA | 29nC @ 4.5V | ±20V | 2560pF @ 20V | - | 2.1W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ ST | DirectFET™ Isometric ST |
|
|
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Infineon Technologies |
MOSFET N-CH 40V 19A DIRECTFET |
4,662 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 19A (Ta), 106A (Tc) | 4.5V, 10V | 5mOhm @ 19A, 10V | 2.25V @ 250µA | 44nC @ 4.5V | ±20V | 3765pF @ 20V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
|
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|
Infineon Technologies |
MOSFET P-CH 12V 16A 8-SOIC |
2,052 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 16A (Ta) | 2.5V, 4.5V | 7mOhm @ 16A, 4.5V | 600mV @ 500µA | 212nC @ 5V | ±12V | 17179pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
MOSFET N-CH 20V 12A 8-SOIC |
5,958 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 12A (Ta) | 2.8V, 10V | 9mOhm @ 12A, 10V | 2V @ 250µA | 35nC @ 4.5V | ±12V | 2480pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 11A 8-SOIC |
4,734 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 2.8V, 10V | 12mOhm @ 11A, 10V | 2V @ 250µA | 32nC @ 4.5V | ±12V | 2530pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
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|
Infineon Technologies |
MOSFET N-CH 12V 11A 8-SOIC |
8,910 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 12V | 11A (Ta) | 2.8V, 4.5V | 15mOhm @ 8.8A, 4.5V | 2V @ 250µA | 19nC @ 4.5V | ±12V | 1590pF @ 6V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |