晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 87/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Diodes Incorporated |
MOSFET N-CH 60V 270MA TO92-3 |
63,594 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 270mA (Ta) | 5V, 10V | 5Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±20V | 60pF @ 25V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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ON Semiconductor |
MOSFET N-CH 100V 10A IPAK |
28,926 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Tc) | 5V, 10V | 180mOhm @ 5A, 10V | 2V @ 250µA | 12nC @ 5V | ±20V | 520pF @ 25V | - | 2.5W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 100V 70A TO252-3 |
24,828 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 70A (Tc) | 10V | 11.1mOhm @ 70A, 10V | 4V @ 83µA | 65nC @ 10V | ±20V | 4355pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 200V 2.85A 8-SOIC |
22,602 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 2.85A (Ta) | 6V, 10V | 80mOhm @ 4A, 10V | 2V @ 250µA (Min) | 42nC @ 10V | ±20V | - | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 75V 80A D2PAK |
19,026 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 9mOhm @ 46A, 10V | 4V @ 100µA | 84nC @ 10V | ±20V | 3070pF @ 50V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 25V 163A WDSON-2 |
40,812 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 36A (Ta), 163A (Tc) | 4.5V, 10V | 1.3mOhm @ 30A, 10V | 2V @ 250µA | 62nC @ 10V | ±20V | 4400pF @ 12V | - | 2.8W (Ta), 57W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Vishay Siliconix |
MOSFET N-CH 100V 1.3A 4-DIP |
105,126 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 1.3A (Ta) | 4V, 5V | 270mOhm @ 780mA, 5V | 2V @ 250µA | 12nC @ 5V | ±10V | 490pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET N-CH 100V 1A 4-DIP |
80,634 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 1A (Ta) | 10V | 540mOhm @ 600mA, 10V | 4V @ 250µA | 8.3nC @ 10V | ±20V | 180pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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ON Semiconductor |
MOSFET P-CH 60V 9.4A IPAK |
40,860 |
|
QFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 9.4A (Tc) | 10V | 185mOhm @ 4.7A, 10V | 4V @ 250µA | 17nC @ 10V | ±30V | 550pF @ 25V | - | 2.5W (Ta), 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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|
Nexperia |
MOSFET N-CH 55V 75A D2PAK |
47,436 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 5V, 10V | 7mOhm @ 25A, 10V | 2V @ 1mA | 45nC @ 5V | ±15V | 5280pF @ 25V | - | 203W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 30V 10.5A 8-SOIC |
24,576 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 10.5A (Ta) | 4.5V, 10V | 7.5mOhm @ 13A, 10V | 3V @ 250µA | 95nC @ 5V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET N-CH 100V 200MA TO92-3 |
32,970 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 200mA (Ta) | 10V | 10Ohm @ 500mA, 10V | 2.4V @ 1mA | - | ±20V | 40pF @ 25V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Vishay Siliconix |
MOSFET N-CH 60V 100A POWERPAKSO |
25,488 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 6V, 10V | 1.7mOhm @ 20A, 10V | 3.4V @ 250µA | 78nC @ 7.5V | ±20V | 5130pF @ 30V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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STMicroelectronics |
MOSFET N-CH 600V 5A DPAK |
47,034 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 5A (Tc) | 10V | 900mOhm @ 2.5A, 10V | 4V @ 250µA | 14nC @ 10V | ±25V | 363pF @ 50V | - | 45W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 42A DPAK |
26,376 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 42A (Tc) | 10V | 18mOhm @ 33A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 2930pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 45V 230MA E-LINE |
161,322 |
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- | P-Channel | MOSFET (Metal Oxide) | 45V | 230mA (Ta) | 10V | 14Ohm @ 200mA, 10V | 3.5V @ 1mA | - | ±20V | 60pF @ 10V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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Diodes Incorporated |
MOSFET P-CH 60V 280MA TO92-3 |
151,950 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 280mA (Ta) | 10V | 5Ohm @ 500mA, 10V | 3.5V @ 1mA | - | ±20V | 100pF @ 18V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Infineon Technologies |
MOSFET N-CH 200V 9.3A TO-220AB |
45,984 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 9.3A (Tc) | 10V | 300mOhm @ 5.4A, 10V | 4V @ 250µA | 35nC @ 10V | ±20V | 575pF @ 25V | - | 82W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N CH 60V 95A TO-220AB |
29,604 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 95A (Tc) | 6V, 10V | 5.9mOhm @ 57A, 10V | 3.7V @ 100µA | 110nC @ 10V | ±20V | 4010pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 55V 11A I-PAK |
29,796 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 11A (Tc) | 10V | 175mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 350pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 100V 17A TO-220AB |
32,406 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 10V | 90mOhm @ 9A, 10V | 4V @ 250µA | 37nC @ 10V | ±20V | 920pF @ 25V | - | 70W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 4A TO-220AB |
25,800 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 4A (Tc) | 10V | 1.2Ohm @ 2.4A, 10V | 4V @ 250µA | 8.7nC @ 10V | ±20V | 200pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 10A TO-220AB |
29,700 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Tc) | 4V, 5V | 200mOhm @ 6A, 5V | 2V @ 250µA | 8.4nC @ 5V | ±10V | 400pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 55V 12A TO-220AB |
22,614 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 12A (Tc) | 10V | 175mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 350pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Diodes Incorporated |
MOSFET P-CH 100V 0.23A TO92-3 |
20,142 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 230mA (Ta) | 10V | 8Ohm @ 375mA, 10V | 3.5V @ 1mA | - | ±20V | 100pF @ 25V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Vishay Siliconix |
MOSFET N-CH 60V 1.7A 4-DIP |
16,578 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 1.7A (Ta) | 10V | 200mOhm @ 1A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 310pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET N-CH 400V 2A TO-220AB |
18,486 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 2A (Tc) | 10V | 3.6Ohm @ 1.2A, 10V | 4V @ 250µA | 17nC @ 10V | ±20V | 170pF @ 25V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 60V 1.1A 4-DIP |
14,394 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 1.1A (Ta) | 10V | 500mOhm @ 660mA, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 270pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Nexperia |
MOSFET N-CH 30V 32A TO220AB |
245,436 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 32A (Tc) | 4.5V, 10V | 17mOhm @ 10A, 10V | 2.15V @ 1mA | 10.7nC @ 10V | ±20V | 552pF @ 15V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 43A TO-220AB |
22,626 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 43A (Tc) | 10V | 15.8mOhm @ 25A, 10V | 4V @ 50µA | 30nC @ 10V | ±20V | 1150pF @ 50V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |