晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 84/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Alpha & Omega Semiconductor |
MOSFET P-CH 30V TO251A |
23,928 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 23A (Ta), 70A (Tc) | 4.5V, 10V | 8mOhm @ 20A, 10V | 2.3V @ 250µA | 70nC @ 10V | ±25V | 2830pF @ 15V | - | 6.2W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251A | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 55V 17A TO-220AB |
26,508 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 10V | 70mOhm @ 10A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 370pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 30V 25A POWER56 |
25,824 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Ta), 42A (Tc) | 4.5V, 10V | 2.8mOhm @ 25A, 10V | 3V @ 250µA | 84nC @ 10V | ±20V | 5565pF @ 15V | - | 2.5W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
|
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STMicroelectronics |
MOSFET N-CH 60V 28A DPAK |
22,398 |
|
STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 60V | 28A (Tc) | 10V | 28mOhm @ 15A, 10V | 4V @ 250µA | 58nC @ 10V | ±20V | 1750pF @ 25V | - | 70W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
Infineon Technologies |
MOSFET N-CH 75V 56A DPAK |
230,118 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 56A (Tc) | 10V | 9mOhm @ 46A, 10V | 4V @ 100µA | 84nC @ 10V | ±20V | 3070pF @ 50V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 60V 74A LFPAK |
27,762 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 74A (Tc) | 10V | 4mOhm @ 15A, 10V | 4V @ 1mA | 56nC @ 10V | ±20V | 3501pF @ 30V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
|
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|
Infineon Technologies |
MOSFET N-CH 100V 17A D2PAK |
35,382 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 4V, 10V | 100mOhm @ 9A, 10V | 2V @ 250µA | 34nC @ 5V | ±20V | 800pF @ 25V | - | 3.8W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|
Alpha & Omega Semiconductor |
MOSFET N-CH 100V 17A 8DFN |
23,550 |
|
AlphaMOS | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Ta), 52A (Tc) | 6V, 10V | 10mOhm @ 20A, 10V | 3.5V @ 250µA | 40nC @ 10V | ±20V | 2265pF @ 50V | - | 6.2W (Ta), 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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STMicroelectronics |
MOSFET N-CH 60V 35A DPAK |
402,576 |
|
STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 60V | 35A (Tc) | 10V | 20mOhm @ 17.5A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 1300pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 100V POWERPAK SO8L |
25,164 |
|
Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 42A (Tc) | 4.5V, 10V | 21mOhm @ 7.4A, 10V | 2.5V @ 250µA | 27nC @ 10V | ±20V | 979pF @ 25V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 60V 12A IPAK |
27,594 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 12A (Ta) | 5V | 104mOhm @ 6A, 5V | 2V @ 250µA | 20nC @ 5V | ±15V | 440pF @ 25V | - | 1.5W (Ta), 48W (Tj) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 40V 47A PPAK SO-8 |
613,284 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 47A (Tc) | 4.5V, 10V | 9mOhm @ 16A, 10V | 3V @ 250µA | 50nC @ 10V | ±20V | 2000pF @ 20V | - | 4.2W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 40V 19A 8SOIC |
318,162 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 19A (Tc) | 4.5V, 10V | 9mOhm @ 12.4A, 10V | 3V @ 250µA | 50nC @ 10V | ±20V | 2000pF @ 20V | - | 2.5W (Ta), 6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 80V 8.9A 8SOIC |
36,570 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 8.9A (Ta) | 6V, 10V | 16mOhm @ 8.9A, 10V | 4V @ 250µA | 41nC @ 10V | ±20V | 1990pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 20V 46A 8-SOIC |
121,854 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 46A (Tc) | 4.5V, 10V | 2mOhm @ 15A, 10V | 2.2V @ 250µA | 110nC @ 10V | ±20V | 4560pF @ 10V | - | 3.5W (Ta), 7.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 20V 18A DIRECTFET |
38,430 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 18A (Ta), 81A (Tc) | 4.5V, 10V | 4.5mOhm @ 18A, 10V | 2.45V @ 250µA | 27nC @ 4.5V | ±20V | 2420pF @ 10V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ ST | DirectFET™ Isometric ST |
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ON Semiconductor |
MOSFET N-CH 60V 30A D-PAK |
54,156 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 6V, 10V | 27mOhm @ 9A, 10V | 4V @ 250µA | 32nC @ 10V | ±20V | 1110pF @ 25V | - | 3.2W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 60V 20A TO251 |
21,984 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 20A (Tc) | 4.5V, 10V | 48mOhm @ 8A, 10V | 2.2V @ 250µA | 22.4nC @ 10V | ±20V | 1250pF @ 30V | - | 66W (Tc) | -50°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Stub Leads, IPak |
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Diodes Incorporated |
MOSFET P-CH 100V 0.14A TO92-3 |
12,228 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 140mA (Ta) | 10V | 20Ohm @ 150mA, 10V | 3.5V @ 1mA | - | ±20V | 50pF @ 25V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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ON Semiconductor |
MOSFET N-CH 150V 8-MLP |
21,810 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 4.4A (Ta) | 4.5V, 10V | 56mOhm @ 4.4A, 10V | 3V @ 250µA | 21nC @ 10V | ±20V | 1335pF @ 75V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 60V 11A IPAK |
92,838 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 11A (Tc) | 5V, 10V | 115mOhm @ 5.5A, 10V | 2.5V @ 250µA | 6.4nC @ 5V | ±20V | 350pF @ 25V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 200V 21A 8-SOP |
143,088 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 200V | 13A (Ta) | 10V | 64mOhm @ 6.5A, 10V | 4V @ 300µA | 11.2nC @ 10V | ±20V | 1100pF @ 100V | - | 1.6W (Ta), 57W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET P-CH 55V 19A D2PAK |
20,268 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 19A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | ±20V | 620pF @ 25V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET N-CH 100V 320MA TO92-3 |
80,934 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 320mA (Ta) | 10V | 4Ohm @ 1A, 10V | 2.4V @ 1mA | - | ±20V | 75pF @ 25V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 60V 450MA TO92-3 |
44,076 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 450mA (Ta) | 10V | 2Ohm @ 1A, 10V | 2.4V @ 1mA | - | ±20V | 75pF @ 18V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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ON Semiconductor |
MOSFET N-CH 80V 100A DPAK |
20,274 |
|
Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Tc) | 10V | 4.2mOhm @ 80A, 10V | 4V @ 250µA | 88nC @ 10V | ±20V | 4840pF @ 40V | - | 227W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
MOSFET N-CH 30V 28A 8SON |
123,264 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 28A (Ta), 100A (Tc) | 3V, 8V | 2.6mOhm @ 25A, 8V | 1.55V @ 250µA | 25nC @ 4.5V | +10V, -8V | 3480pF @ 15V | - | 3.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N CH 100V 56A DPAK |
283,572 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 56A (Tc) | 10V | 13.9mOhm @ 38A, 10V | 4V @ 100µA | 81nC @ 10V | ±20V | 3031pF @ 50V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 150V 51.6A SO-8 |
57,408 |
|
ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 51.6A (Tc) | 7.5V, 10V | 17.7mOhm @ 20A, 10V | 4.5V @ 250µA | 31nC @ 7.5V | ±20V | 1516pF @ 75V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Diodes Incorporated |
MOSFET N-CH 100V 1.67A SOT223 |
26,454 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 1.67A (Ta) | 5V, 10V | 540mOhm @ 3.3A, 10V | 3V @ 1mA | - | ±20V | 350pF @ 25V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |