晶體管-FET，MOSFET-單
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
展開過濾器
重置過濾器
應用過濾器
類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 873/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics America |
MOSFET N-CH 60V 45A LFPAK |
2,502 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 45A (Ta) | 4.5V, 10V | 4.8mOhm @ 22.5A, 10V | 2.5V @ 1mA | 42nC @ 4.5V | ±20V | 6100pF @ 10V | - | 65W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
|
|
|
Renesas Electronics America |
MOSFET N-CH 60V LFPAK |
3,546 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Ta) | 10V | 8.3mOhm @ 15A, 10V | - | 27nC @ 10V | ±20V | 2000pF @ 10V | - | 55W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
|
|
|
Renesas Electronics America |
MOSFET N-CH 80V 20A LFPAK |
8,388 |
|
- | N-Channel | MOSFET (Metal Oxide) | 80V | 20A (Ta) | 4.5V, 10V | 23mOhm @ 10A, 10V | 2.5V @ 1mA | 14nC @ 4.5V | ±20V | 2050pF @ 10V | - | 45W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
|
|
|
Renesas Electronics America |
MOSFET N-CH 80V 30A LFPAK |
4,842 |
|
- | N-Channel | MOSFET (Metal Oxide) | 80V | 30A (Ta) | 4.5V, 10V | 12mOhm @ 15A, 10V | - | 28nC @ 4.5V | ±20V | 4150pF @ 10V | - | 55W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
|
|
|
Renesas Electronics America |
MOSFET N-CH 80V 40A LFPAK |
4,932 |
|
- | N-Channel | MOSFET (Metal Oxide) | 80V | 40A (Ta) | 4.5V, 10V | 8mOhm @ 20A, 10V | - | 40nC @ 4.5V | ±20V | 6170pF @ 10V | - | 65W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
|
|
|
Renesas Electronics America |
MOSFET N-CH 80V LFPAK |
2,952 |
|
- | N-Channel | MOSFET (Metal Oxide) | 80V | 25A (Ta) | 10V | 13mOhm @ 12.5A, 10V | - | 27nC @ 10V | ±20V | 2000pF @ 10V | - | 55W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
|
|
|
Renesas Electronics America |
MOSFET N-CH 80V 35A LFPAK |
2,682 |
|
- | N-Channel | MOSFET (Metal Oxide) | 80V | 35A (Ta) | 10V | 8.9mOhm @ 17.5A, 10V | - | 40nC @ 10V | ±20V | 3000pF @ 10V | - | 65W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
|
|
|
Renesas Electronics America |
MOSFET N-CH 100V 15A LFPAK |
8,154 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 15A (Ta) | 4.5V, 10V | 39mOhm @ 7.5A, 10V | - | 15nC @ 4.5V | ±20V | 2060pF @ 10V | - | 45W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
|
|
|
Renesas Electronics America |
MOSFET N-CH 100V 20A LFPAK |
6,012 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 20A (Ta) | 4.5V, 10V | 20mOhm @ 10A, 10V | - | 29nC @ 4.5V | ±20V | 4160pF @ 10V | - | 55W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
|
|
|
Renesas Electronics America |
MOSFET N-CH 100V 25A LFPAK |
7,362 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 25A (Ta) | 4.5V, 10V | 13mOhm @ 12.5A, 10V | - | 43nC @ 4.5V | ±20V | 6160pF @ 10V | - | 65W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
|
|
|
Renesas Electronics America |
MOSFET N-CH 100V 23A LFPAK |
6,264 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 23A (Ta) | 10V | 17mOhm @ 11.5A, 10V | - | 35nC @ 10V | ±20V | 2550pF @ 10V | - | 60W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
|
|
|
Renesas Electronics America |
MOSFET N-CH 150V W-PAK |
2,196 |
|
- | N-Channel | MOSFET (Metal Oxide) | 150V | 25A (Ta) | 10V | 48mOhm @ 12.5A, 10V | - | 38nC @ 10V | ±30V | 2400pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Surface Mount | 8-WPAK | 8-PowerWDFN |
|
|
|
Renesas Electronics America |
MOSFET N-CH 150V W-PAK |
7,992 |
|
- | N-Channel | MOSFET (Metal Oxide) | 150V | 25A (Ta) | 10V | 58mOhm @ 12.5A, 10V | - | 20nC @ 10V | ±30V | 1250pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Surface Mount | 8-WPAK | 8-PowerWDFN |
|
|
|
Renesas Electronics America |
MOSFET N-CH 200V W-PAK |
8,856 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 20A (Ta) | 10V | 69mOhm @ 10A, 10V | - | 38nC @ 10V | ±30V | 2400pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Surface Mount | 8-WPAK | 8-PowerWDFN |
|
|
|
Renesas Electronics America |
MOSFET N-CH 600V 0.4A MP3A |
4,158 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 400mA (Ta) | 10V | 42Ohm @ 200mA, 10V | - | 4.3nC @ 10V | ±30V | 37.5pF @ 25V | - | 27.2W (Tc) | 150°C (TJ) | Surface Mount | MP-3A | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Renesas Electronics America |
MOSFET N-CH 600V 1A MP3A |
5,508 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 1A (Ta) | 10V | 17.5Ohm @ 500mA, 10V | 5V @ 1mA | 5nC @ 10V | ±30V | 37.5pF @ 25V | - | 29.7W (Tc) | 150°C (TJ) | Surface Mount | MP-3A | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Renesas Electronics America |
MOSFET N-CH 30V 35A 2WPACK |
6,642 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Ta) | 4.5V, 10V | 5.2mOhm @ 17.5A, 10V | 2.5V @ 1mA | 14nC @ 4.5V | ±20V | 2180pF @ 10V | - | 40W (Tc) | 150°C (TJ) | Surface Mount | 8-WPAK | 8-PowerWDFN |
|
|
|
Vicor |
MOSFET N-CH 5V 60A 3LGA |
2,088 |
|
Picor® µRDS(on)FET® | N-Channel | MOSFET (Metal Oxide) | 5V | 60A (Ta) | 3.5V, 4.5V | 0.45mOhm @ 60A, 4.5V | 800mV @ 1mA | 65nC @ 4.5V | ±5V | 7600pF @ 5V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-LGA (4.1x8) | 3-FLGA |
|
|
|
Nexperia |
MOSFET N-CH 100V 23.4A TO220F |
3,852 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 23.4A (Tc) | 10V | 26.8mOhm @ 5A, 10V | 4V @ 250µA | 30nC @ 10V | ±20V | 1624pF @ 50V | - | 41.1W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack, Isolated Tab |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 45A TO263-3-2 |
4,590 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 45A (Tc) | 4.5V, 10V | 7.6mOhm @ 45A, 10V | 2.2V @ 17µA | 30nC @ 10V | +20V, -16V | 2340pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 100A TO252-3-11 |
5,400 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 3.5mOhm @ 100A, 10V | 4V @ 90µA | 128nC @ 10V | ±20V | 10400pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET P-CH 60V 0.17A SOT23 |
5,580 |
|
SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 170mA (Ta) | 4.5V, 10V | 8Ohm @ 170mA, 10V | 2V @ 20µA | 1.5nC @ 10V | ±20V | 19pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 200V 14.5A TO220-3 |
2,700 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 14.5A (Tc) | 5V | 200mOhm @ 9A, 5V | 4V @ 1mA | - | ±20V | 1120pF @ 25V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 200V 13.5A TO220-3 |
7,272 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 13.5A (Tc) | 5V | 200mOhm @ 7A, 5V | 2V @ 1mA | - | ±20V | 1600pF @ 25V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 200V 7A TO220-3 |
4,122 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 7A (Tc) | 10V | 400mOhm @ 4.5A, 10V | 4V @ 1mA | - | ±20V | 530pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 200V 5.5A TO220-3 |
7,974 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 7A (Tc) | 10V | 400mOhm @ 4.5A, 10V | 4V @ 1mA | - | ±20V | 530pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 200V 5.5A TO220-3 |
4,140 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 5.5A (Tc) | 10V | 600mOhm @ 4.5A, 10V | 4V @ 1mA | - | ±20V | 530pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 200V 5.5A TO220-3 |
5,706 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 5.5A (Tc) | 10V | 600mOhm @ 4.5A, 10V | 4V @ 1mA | - | ±20V | 530pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 200V 5.5A TO220-3 |
5,544 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 5.5A (Tc) | 5V | 600mOhm @ 3.5A, 5V | 2V @ 1mA | - | ±20V | 840pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 200V 7A TO220-3 |
5,454 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 7A (Tc) | 5V | 400mOhm @ 3.5A, 5V | 2V @ 1mA | - | ±20V | 840pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |