Toshiba Semiconductor and Storage 晶體管-FET，MOSFET-單
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展開過濾器
重置過濾器
應用過濾器
類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Toshiba Semiconductor and Storage
記錄 786
頁面 15/27
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 40A 8TSON-ADV |
2,646 |
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U-MOSVIII | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Ta) | 4.5V, 10V | 2.5mOhm @ 20A, 10V | 2.3V @ 500µA | 40nC @ 10V | ±20V | 2230pF @ 15V | - | 700mW (Ta), 35W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 5A DPAK-3 |
3,186 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Ta) | 10V | 1.5Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 490pF @ 25V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 525V 5A DPAK-3 |
3,816 |
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- | N-Channel | MOSFET (Metal Oxide) | 525V | 5A (Ta) | 10V | 1.5Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 540pF @ 25V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 5.6A 8SOP |
2,718 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 250V | 5.6A (Ta) | 10V | 198mOhm @ 2.8A, 10V | 4V @ 200µA | 7nC @ 10V | ±20V | 600pF @ 100V | - | 1.6W (Ta), 42W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 34A 8SOP-ADV |
2,358 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 30V | 34A (Ta) | 4.5V, 10V | 4.8mOhm @ 17A, 10V | 2V @ 500µA | 115nC @ 10V | +20V, -25V | 4800pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 525V 6A DPAK-3 |
5,526 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 525V | 6A (Ta) | 10V | 1.3Ohm @ 3A, 10V | 4.4V @ 1mA | 12nC @ 10V | ±30V | 600pF @ 25V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 7A DPAK-3 |
8,712 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 500V | 7A (Ta) | 10V | 1.22Ohm @ 3.5A, 10V | 4.4V @ 1mA | 12nC @ 10V | ±30V | 600pF @ 25V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 200V 7.2A 8TSON |
5,616 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 200V | 7.2A (Ta) | 10V | 114mOhm @ 3.6A, 10V | 4V @ 200µA | 7nC @ 10V | ±20V | 600pF @ 100V | - | 700mW (Ta), 39W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 200V 7.2A 8SOP |
7,920 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 200V | 7.2A (Ta) | 10V | 114mOhm @ 3.6A, 10V | 4V @ 200µA | 7nC @ 10V | ±20V | 600pF @ 100V | - | 1.6W (Ta), 42W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 40A DPAK-3 |
4,140 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 40V | 40A (Ta) | 6V, 10V | 9.1mOhm @ 20A, 10V | 3V @ 1mA | 83nC @ 10V | +10V, -20V | 4140pF @ 10V | - | 68W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 48A 8SOP-ADV |
3,526 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 48A (Ta) | 4.5V, 10V | 2.2mOhm @ 24A, 10V | 2.3V @ 1mA | 74nC @ 10V | ±20V | 6200pF @ 10V | - | 1.6W (Ta), 63W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 30A DPAK-3 |
2,898 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 60V | 30A (Ta) | 6V, 10V | 21.8mOhm @ 15A, 10V | 3V @ 1mA | 80nC @ 10V | +10V, -20V | 3950pF @ 10V | - | 68W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 80V 34A SOP |
2,322 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 80V | 34A (Tc) | 10V | 8mOhm @ 17A, 10V | 4V @ 500µA | 35nC @ 10V | ±20V | 3000pF @ 40V | - | 1.6W (Ta), 61W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
6,444 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 92A (Ta), 70A (Tc) | 4.5V, 10V | 4.1mOhm @ 35A, 10V | 2.5V @ 1mA | 75nC @ 10V | ±20V | 6.3nF @ 50V | - | 2.5W (Ta), 67W (Tc) | 150°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 2A PW-MOLD |
2,898 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Ta) | 10V | 4.3Ohm @ 1A, 10V | 4.4V @ 1mA | 7nC @ 10V | ±30V | 280pF @ 25V | - | 60W (Tc) | 150°C (TJ) | Through Hole | PW-MOLD2 | TO-251-3 Stub Leads, IPak |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 8A TO220SIS |
7,920 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Ta) | 10V | 850mOhm @ 4A, 10V | 4V @ 1mA | 16nC @ 10V | ±30V | 800pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 60A DPAK-3 |
3,654 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 60V | 60A (Ta) | 6V, 10V | 8mOhm @ 30A, 10V | 3V @ 1mA | 60nC @ 10V | ±20V | 2900pF @ 10V | - | 88W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 65A DPAK-3 |
4,788 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 40V | 65A (Ta) | 6V, 10V | 4.5mOhm @ 32.5A, 10V | 3V @ 1mA | 63nC @ 10V | ±20V | 2800pF @ 10V | - | 88W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 9.3A DPAK |
6,714 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 9.3A (Ta) | 10V | 560mOhm @ 4.6A, 10V | 3.5V @ 350µA | 20nC @ 10V | ±30V | 700pF @ 300V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 50A DPAK-3 |
4,482 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 60V | 50A (Ta) | 6V, 10V | 13.8mOhm @ 25A, 10V | 3V @ 1mA | 124nC @ 10V | +10V, -20V | 6290pF @ 10V | - | 90W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 60A DPAK-3 |
4,050 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 40V | 60A (Ta) | 6V, 10V | 6.3mOhm @ 30A, 10V | 3V @ 1mA | 125nC @ 10V | +10V, -20V | 6510pF @ 10V | - | 90W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 16A 8SOP-ADV |
7,974 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 11.4mOhm @ 8A, 10V | 2.3V @ 200µA | 20nC @ 10V | ±20V | 1600pF @ 10V | - | 1.6W (Ta), 25W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 18A 8SOP |
4,158 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V, 10V | 5.8mOhm @ 9A, 10V | 2.3V @ 300µA | 34nC @ 10V | ±20V | 2900pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 11.1A DPAK-0S |
2,934 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 11.1A (Ta) | 10V | 440mOhm @ 5.5A, 10V | 3.5V @ 450µA | 25nC @ 10V | ±30V | 890pF @ 300V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 6.2A DPAK |
7,308 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Ta) | 10V | 820mOhm @ 3.1A, 10V | 3.7V @ 310µA | 12nC @ 10V | ±30V | 390pF @ 300V | Super Junction | 60W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 45A 8SOP-ADV |
6,624 |
|
U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 30V | 45A (Ta) | 4.5V, 10V | 3mOhm @ 22.5A, 10V | 2V @ 1mA | 190nC @ 10V | +20V, -25V | 7420pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 28A 8SOP-ADV |
4,842 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 28A (Ta) | 4.5V, 10V | 5.6mOhm @ 14A, 10V | 2.3V @ 300µA | 34nC @ 10V | ±20V | 2900pF @ 10V | - | 1.6W (Ta), 42W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 7A DPAK |
6,894 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Ta) | 10V | 600mOhm @ 3.5A, 10V | 3.7V @ 350µA | 15nC @ 10V | ±30V | 490pF @ 300V | Super Junction | 60W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 80A DPAK-3 |
6,858 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Ta) | 6V, 10V | 3.1mOhm @ 40A, 10V | 3V @ 1mA | 87nC @ 10V | ±20V | 4340pF @ 10V | - | 100W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 80A DPAK-3 |
7,956 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Ta) | 6V, 10V | 5.5mOhm @ 40A, 10V | 3V @ 1mA | 85nC @ 10V | ±20V | 4200pF @ 10V | - | 100W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |